公开(公告)号：US20200177093A1

公开(公告)日：2020-06-04

申请号：US16782158

申请日：2020-02-05

Applicant: DENSO CORPORATION

Inventor： Tetsuya MATSUOKA ,  Ryota TANABE ,  Yuu YAMAHIRA ,  Kazuma FUKUSHIMA ,  Kosuke KAMIYA

IPC: H02M7/00 ,  H01L25/18 ,  H02M7/5387 ,  H01L23/473

Abstract: A power conversion apparatus has a positive electrode bus bar and a negative electrode bus bar. The power conversion apparatus has a first semiconductor module incorporating an upper-arm switching element and including a positive electrode terminal and a second semiconductor module incorporating a lower-arm switching element and including a negative electrode terminal. The first semiconductor module and the second semiconductor module are placed such that the positive electrode terminal and the negative electrode terminal face each other in a direction orthogonal to a protruding direction. The positive electrode bus bar and the negative electrode bus bar respectively have coexisting parts placed together between the positive electrode terminal and the negative electrode terminal as seen in the protruding direction of power terminals. The coexisting parts are at least partially placed in a space between the positive electrode terminal and the negative electrode terminal.

公开(公告)号：US20210143088A1

公开(公告)日：2021-05-13

申请号：US17155696

申请日：2021-01-22

Applicant: DENSO CORPORATION

Inventor： Kosuke KAMIYA ,  Ryota TANABE ,  Tomohisa SANO ,  Takuo NAGASE ,  Hiroshi ISHINO ,  Shoichiro OMAE

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00 ,  H01L25/07 ,  H01L25/18

Abstract: A semiconductor device configures one arm of an upper-lower arm circuit, and includes: a semiconductor element that includes a first main electrode and a second main electrode, wherein a main current between the first main electrode and the second main electrode; and multiple main terminals that include a first main terminal connected to the first main electrode and a second main terminal connected to the second main electrode. The first main terminal and the second main terminal are placed adjacent to each other; A lateral surface of the first main terminal and a lateral surface of the second main terminal face each other in one direction orthogonal to a thickness direction of the semiconductor element.

公开(公告)号：US20200176435A1

公开(公告)日：2020-06-04

申请号：US16785913

申请日：2020-02-10

Applicant: DENSO CORPORATION

Inventor： Kazuma FUKUSHIMA ,  Yuu YAMAHIRA ,  Ryota TANABE ,  Tetsuya MATSUOKA ,  Kosuke KAMIYA ,  Taijiro MOMOSE

IPC: H01L25/18 ,  H01L23/50 ,  H02M7/00

Abstract: A power conversion device provided with a switching circuit unit including a plurality of upper-arm switching elements connected to positive electrode wiring and a plurality of lower-arm switching elements connected to negative electrode wiring. The power conversion device includes a first semiconductor module incorporating a plurality of the upper-arm switching elements connected together in parallel, a second semiconductor module incorporating a plurality of the lower-arm switching elements connected together in parallel, and a third semiconductor module incorporating the upper-arm switching elements connected together in series and the lower-arm switching elements connected together in series.

公开(公告)号：US20190019625A1

公开(公告)日：2019-01-17

申请号：US16030526

申请日：2018-07-09

Applicant: DENSO CORPORATION

Inventor： Naoki HIRASAWA ,  Kosuke KAMIYA ,  Keishiro MORI ,  Makoto TERAWAKI ,  Yukikatsu KAWAMURA

IPC: H01G4/32 ,  H01G4/30 ,  H01G4/012 ,  H01G4/232

Abstract: A film capacitor includes: a film winding portion formed by winding at least one metalized film that includes a dielectric film and a metal film provided on a surface of the dielectric film; a pair of metallikon electrodes formed respectively on end faces of the film winding portion in a winding axis direction of the film winding portion; and a pair of busbars each of which is joined to a corresponding one of the metallikon electrodes via a joining metal. Each of the busbars is plate-shaped to cover an outer surface of the corresponding metallikon electrode. At least one of the metallikon electrodes has a ridge that is formed on the outer surface of the metallikon electrode to be convex in the winding axis direction toward the corresponding busbar. In the corresponding busbar, there is formed a ridge-receiving portion in which the ridge of the metallikon electrode is received.