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公开(公告)号:US20240032265A1
公开(公告)日:2024-01-25
申请号:US18481534
申请日:2023-10-05
Applicant: DENSO CORPORATION
Inventor: Yuta HASHIMOTO , Tomohisa SANO , Shoichiro OMAE , Takanori KAWASHIMA
IPC: H05K7/20
CPC classification number: H05K7/20927
Abstract: A power card, which is to be aligned in a height direction with a cooling unit in which a refrigerant flows in an inner space extending in a lateral direction, includes a plurality of switches, a resin portion, and a plurality of external connection terminals. The switches are aligned in a vertical direction perpendicular to each of the lateral direction and the height direction. The resin portion covers each of the switches. The external connection terminals are electrically connected to the respective switches and each have a portion exposed from the resin portion.
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公开(公告)号:US20210143088A1
公开(公告)日:2021-05-13
申请号:US17155696
申请日:2021-01-22
Applicant: DENSO CORPORATION
Inventor: Kosuke KAMIYA , Ryota TANABE , Tomohisa SANO , Takuo NAGASE , Hiroshi ISHINO , Shoichiro OMAE
IPC: H01L23/495 , H01L23/31 , H01L23/00 , H01L25/07 , H01L25/18
Abstract: A semiconductor device configures one arm of an upper-lower arm circuit, and includes: a semiconductor element that includes a first main electrode and a second main electrode, wherein a main current between the first main electrode and the second main electrode; and multiple main terminals that include a first main terminal connected to the first main electrode and a second main terminal connected to the second main electrode. The first main terminal and the second main terminal are placed adjacent to each other; A lateral surface of the first main terminal and a lateral surface of the second main terminal face each other in one direction orthogonal to a thickness direction of the semiconductor element.
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公开(公告)号:US20250069967A1
公开(公告)日:2025-02-27
申请号:US18928536
申请日:2024-10-28
Applicant: DENSO CORPORATION
Inventor: Akinori SAKAKIBARA , Takanori KAWASHIMA , Shingo TSUCHIMOCHI , Shoichiro OMAE
IPC: H01L23/13 , H01L23/31 , H01L23/498 , H01L25/065 , H01L25/07
Abstract: A semiconductor device includes a first insulating circuit board, a semiconductor element on the first insulating circuit board, and an encapsulating body. The first insulating circuit board includes a first insulating substrate, and a first inner conductor layer, and a first outer conductor layer. The first inner conductor layer is electrically connected to a first electrode of the semiconductor element inside of the encapsulating body. The first outer conductor layer is exposed from a surface of the encapsulating body. The first inner conductor layer has a first thin-wall portion a thickness of which reduces toward an outer side, along an outer peripheral edge of the first inner conductor layer with a first width. The first outer conductor layer (i) does not have or (ii) has a second thin-wall portion along the outer peripheral edge of the first outer conductor layer with a second width.
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公开(公告)号:US20220278006A1
公开(公告)日:2022-09-01
申请号:US17746492
申请日:2022-05-17
Applicant: DENSO CORPORATION
Inventor: Akinori SAKAKIBARA , Takanori KAWASHIMA , Shingo TSUCHIMOCHI , Shoichiro OMAE
IPC: H01L23/13 , H01L23/498 , H01L23/31
Abstract: A semiconductor device includes a first insulating circuit board, a semiconductor element on the first insulating circuit board, and an encapsulating body. The first insulating circuit board includes a first insulating substrate, and a first inner conductor layer, and a first outer conductor layer. The first inner conductor layer is electrically connected to a first electrode of the semiconductor element inside of the encapsulating body. The first outer conductor layer is exposed from a surface of the encapsulating body. The first inner conductor layer has a first thin-wall portion a thickness of which reduces toward an outer side, along an outer peripheral edge of the first inner conductor layer with a first width. The first outer conductor layer (i) does not have or (ii) has a second thin-wall portion along the outer peripheral edge of the first outer conductor layer with a second width.
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公开(公告)号:US20210407892A1
公开(公告)日:2021-12-30
申请号:US17469303
申请日:2021-09-08
Applicant: DENSO CORPORATION
Inventor: Hiroshi ISHINO , Ryota MIWA , Shoichiro OMAE , Takuo NAGASE
IPC: H01L23/495 , H01L23/31 , H01L23/50
Abstract: A semiconductor module includes: a semiconductor element having a first main electrode and a second main electrode; a first conductive member and a second conductive member connected to the first main electrode and the second main electrode, respectively, and placed to sandwich the semiconductor element; and a main terminal including a first main terminal continuous from the first conductive member and a second main terminal continuous from the second conductive member. The main terminal has a facing portion, a non-facing portion, a first connection portion, and a second connection portion. In a width direction, a formation position of the second connection portion overlaps with a formation position of the first connection portion.
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公开(公告)号:US20210407881A1
公开(公告)日:2021-12-30
申请号:US17469091
申请日:2021-09-08
Applicant: DENSO CORPORATION
Inventor: Shoichiro OMAE , Hiroshi ISHINO
IPC: H01L23/367 , H01L23/495 , H01L23/31 , H01L23/00
Abstract: A semiconductor device includes: a semiconductor element having a first main electrode and a second main electrode; a first heat dissipation member and a second heat dissipation member; and a lead frame including a first main terminal connected to the first heat dissipation member and a second main terminal connected to the second main electrode. The second main terminal includes a connection portion connected with the second main electrode, a facing portion extending from the connection portion and facing the first heat dissipation member, and a non-facing portion. The non-facing portion and the first main terminal are arranged in a direction orthogonal to a thickness direction. A side surface of the first main terminal and a side surface of the non-facing portion of the second main terminal face each other.
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