公开(公告)号：US11043474B2

公开(公告)日：2021-06-22

申请号：US16396822

申请日：2019-04-29

Applicant: DENSO CORPORATION

Inventor： Shingo Tsuchimochi ,  Rintaro Asai ,  Akinori Sakakibara ,  Masao Noguchi

IPC: H01L25/07 ,  H01L23/498 ,  H01L23/31

Abstract: A semiconductor device may include a first insulated substrate, a first semiconductor chip and a second semiconductor chip disposed on the first insulated substrate, a second insulated substrate opposed to the first insulated substrate with the first semiconductor chip interposed therebetween, and a third insulated substrate opposed to the first insulated substrate with the second semiconductor chip interposed therebetween and located side by side with the second insulated substrate.