公开(公告)号：US11043474B2

公开(公告)日：2021-06-22

申请号：US16396822

申请日：2019-04-29

Applicant: DENSO CORPORATION

Inventor： Shingo Tsuchimochi ,  Rintaro Asai ,  Akinori Sakakibara ,  Masao Noguchi

IPC: H01L25/07 ,  H01L23/498 ,  H01L23/31

Abstract: A semiconductor device may include a first insulated substrate, a first semiconductor chip and a second semiconductor chip disposed on the first insulated substrate, a second insulated substrate opposed to the first insulated substrate with the first semiconductor chip interposed therebetween, and a third insulated substrate opposed to the first insulated substrate with the second semiconductor chip interposed therebetween and located side by side with the second insulated substrate.

公开(公告)号：US10658273B2

公开(公告)日：2020-05-19

申请号：US16173187

申请日：2018-10-29

Applicant: Denso Corporation

Inventor： Rintaro Asai

IPC: H01L23/495 ,  H01L25/07 ,  H01L23/31 ,  H01L23/00 ,  H01L23/373 ,  H01L23/433

Abstract: A semiconductor device may include: a first and a second semiconductor elements; and a first and a second insulated substrates each including an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layers respectively on one face of the first and the second insulated substrate being connected to the first and the second semiconductor element, wherein the metal layers respectively on the one face of the first and the second insulated substrate are electrically connected via a joint each other; the joint is constituted of a separate member from the insulated substrates; and one end of the joint is connected to the metal layer on the one face of the first insulated substrate, and another end of the joint is connected to the metal layer on the one face of the second insulated substrate.