公开(公告)号：US10964809B2

公开(公告)日：2021-03-30

申请号：US16816463

申请日：2020-03-12

Applicant: DENSO CORPORATION

Inventor： Masato Noborio ,  Masayasu Ishiko ,  Jun Saito

IPC: H01L29/78 ,  H01L21/265 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device comprises: a cell region that includes a semiconductor element; an outer peripheral region that surrounds an outer periphery of the cell region; a substrate that has a front surface and a back surface, and is made of a semiconductor of a first or second conductivity type; a first conductivity layer that is formed on the front surface of the substrate and made of the semiconductor of the first conductivity type having a lower impurity concentration than impurity concentration of the substrate; a first electrode that is provided on an opposite side of the substrate across the first conductivity layer, the first electrode being provided in the semiconductor element; and a second electrode that is placed toward the back surface of the substrate, the second electrode being provided in the semiconductor element.