公开(公告)号：US20250164556A1

公开(公告)日：2025-05-22

申请号：US19027930

申请日：2025-01-17

Applicant: DENSO CORPORATION

Inventor： Tomoo MORINO ,  Masayuki IWATSUKI

IPC: G01R31/3183 ,  G01R31/317 ,  G06F11/263

Abstract: A method of manufacturing a semiconductor device includes: using a semiconductor element to be inspected as a first semiconductor element; using a semiconductor element for obtaining teaching data as a second semiconductor element; obtaining teaching data including a plurality of data related to characteristics of the second semiconductor element; creating a trained model using the teaching data; and determining whether to perform electric test of the first semiconductor element based on an output obtained by inputting a plurality of data related to characteristics of the first semiconductor element into the trained model.