公开(公告)号：US20160308524A1

公开(公告)日：2016-10-20

申请号：US14901767

申请日：2014-07-09

Applicant: DENSO CORPORATION

Inventor： Takeshi Inoue ,  Takahiro Iwamura ,  Masahiro YAMAMOTO

IPC: H03K17/16 ,  H01L27/06 ,  H03K17/74 ,  H01L29/06 ,  H01L29/739 ,  H01L29/78 ,  H02M1/38 ,  H01L27/02

CPC classification number: H03K17/168 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/0727 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H02M1/08 ,  H02M1/38 ,  H02M2001/0009 ,  H02M2001/0048 ,  H02M2001/0051 ,  H02M2001/0054 ,  H03K17/166 ,  H03K17/74 ,  Y02B70/1491

Abstract: A drive control device for two semiconductor elements having a transistor structure and a diode structure with a common energization electrode includes: a current detection device outputting a current detection signal of the semiconductor elements; and a first control device outputting a gate drive signal from when a first time period has elapsed from a starting time to when a second time period has elapsed from the starting time, at which an off-command signal is input after it is determined that a current flows through the semiconductor elements in a forward direction of the diode structure during a time period for which an on-command signal is input to the semiconductor elements. The first and the second time periods are preliminary set not to generate an arm short-circuit between two semiconductor elements.

Abstract translation: 具有晶体管结构的两个半导体元件和具有公共通电电极的二极管结构的驱动控制装置包括：电流检测装置，输出半导体元件的电流检测信号; 以及第一控制装置，从第一时间段开始经过从开始时刻到经过从执行断开命令信号的第二时间段起经过了第二时间段之后的门驱动信号， 在输入到半导体元件的指令信号的时间段期间，电流在二极管结构的正方向上流过半导体元件。 第一和第二时间段被初步设定为不在两个半导体元件之间产生臂短路。

公开(公告)号：US11095283B2

公开(公告)日：2021-08-17

申请号：US16303635

申请日：2017-05-16

Applicant: DENSO CORPORATION

Inventor： Takeshi Inoue

IPC: H03K17/082

Abstract: A drive control apparatus for a switching element drives a switching element including a sense element, and includes a drive circuit that provides a gate driving signal to the switching element, a transient characteristic absorbing circuit that absorbs a transient characteristic of the sense element when the switching element is turned on, and a determination circuit that determines an overcurrent or a short-circuit state of the switching element from an output of the sense element.

公开(公告)号：US09590616B2

公开(公告)日：2017-03-07

申请号：US14901767

申请日：2014-07-09

Applicant: DENSO CORPORATION

Inventor： Takeshi Inoue ,  Takahiro Iwamura ,  Masahiro Yamamoto

IPC: H03K3/00 ,  H03K17/16 ,  H02M1/38 ,  H01L27/06 ,  H01L27/02 ,  H01L29/06 ,  H01L29/739 ,  H01L29/78 ,  H03K17/74 ,  H02M1/00

CPC classification number: H03K17/168 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/0727 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H02M1/08 ,  H02M1/38 ,  H02M2001/0009 ,  H02M2001/0048 ,  H02M2001/0051 ,  H02M2001/0054 ,  H03K17/166 ,  H03K17/74 ,  Y02B70/1491

Abstract: A drive control device for two semiconductor elements having a transistor structure and a diode structure with a common energization electrode includes: a current detection device outputting a current detection signal of the semiconductor elements; and a first control device outputting a gate drive signal from when a first time period has elapsed from a starting time to when a second time period has elapsed from the starting time, at which an off-command signal is input after it is determined that a current flows through the semiconductor elements in a forward direction of the diode structure during a time period for which an on-command signal is input to the semiconductor elements. The first and the second time periods are preliminary set not to generate an arm short-circuit between two semiconductor elements.

Abstract translation: 具有晶体管结构的两个半导体元件和具有公共通电电极的二极管结构的驱动控制装置包括：电流检测装置，输出半导体元件的电流检测信号; 以及第一控制装置，从第一时间段开始经过从开始时刻到经过从执行断开命令信号的第二时间段起经过了第二时间段之后的门驱动信号， 在输入到半导体元件的指令信号的时间段期间，电流在二极管结构的正方向上流过半导体元件。 第一和第二时间段被初步设定为不在两个半导体元件之间产生臂短路。