公开(公告)号：US20230283279A1

公开(公告)日：2023-09-07

申请号：US18111055

申请日：2023-02-17

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Adrian John Bergsma

IPC分类号： H03K17/687 ,  H01L27/02 ,  H03H1/02 ,  H03K17/74

CPC分类号： H03K17/6872 ,  H01L27/0251 ,  H03H1/02 ,  H03K17/74

摘要： A clamping circuit comprises a first field-effect transistor (FET) having a gate, a source, and a drain, a diode, a first voltage source, and coupling circuitry configured to couple the first voltage source to the drain of the first FET and the diode to the source of the first FET.

公开(公告)号：US11671096B1

公开(公告)日：2023-06-06

申请号：US17561450

申请日：2021-12-23

申请人： Wisk Aero LLC

发明人： Hongxia Chen ,  Rui Gao ,  Lewis Romeo Hom ,  Geoffrey Alan Long

IPC分类号： G01R31/26 ,  G01R31/40 ,  G01R19/12 ,  G01R19/165 ,  H03K17/74 ,  H03K17/082

CPC分类号： H03K17/74 ,  H03K17/0822 ,  H03K2217/0081

摘要： A power delivery system includes a controller, configured to receive a voltage indication signal indicating a measured voltage of a battery management system and to determine whether first and second diodes of the battery management system are faulty based on the voltage indication signal. The controller is also configured to respectively receive first and second current indication signals from first and second current sensors of the battery management system and to determine whether the first and second diodes of the first battery management system are faulty based on the first and second current indication signals.

公开(公告)号：US10084442B2

公开(公告)日：2018-09-25

申请号：US15698968

申请日：2017-09-08

申请人： Kabushiki Kaisha Toshiba

发明人： Kentaro Ikeda ,  Takenori Yasuzumi ,  Kohei Hasegawa

IPC分类号： H03K17/081 ,  H01L29/20 ,  H01L23/528 ,  H01L29/78 ,  H01L29/872 ,  H01L29/778

CPC分类号： H03K17/08104 ,  H01L23/528 ,  H01L24/49 ,  H01L25/16 ,  H01L29/2003 ,  H01L29/778 ,  H01L29/7827 ,  H01L29/872 ,  H01L2224/48227 ,  H01L2224/49175 ,  H02M1/08 ,  H02M1/088 ,  H03K17/08 ,  H03K17/08122 ,  H03K17/08142 ,  H03K17/0822 ,  H03K17/102 ,  H03K17/74

摘要： A semiconductor device according to an embodiment includes a normally-off transistor having a first source, a first drain, and a first gate; a normally-on transistor having a second source electrically connected to the first drain, a second drain, and a second gate, a capacitor having a first end and a second end, the second end being electrically connected to the second gate, a first diode having a first anode electrically connected between the second end and the second gate and having a first cathode electrically connected to the second source, a first resistor provided between the first end and the first gate, and a second diode having a second anode electrically connected to the first end and having a second cathode electrically connected to the first gate, the second diode being provided in parallel with the first resistor.

公开(公告)号：US20180183437A1

公开(公告)日：2018-06-28

申请号：US15879231

申请日：2018-01-24

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Rajarshi Mukhopadhyay ,  Nathan Schemm ,  Xiaonan Wang

IPC分类号： H03K17/74 ,  G05F1/46 ,  H03K5/24

CPC分类号： H03K17/74 ,  G05F1/46 ,  H03K5/2472 ,  H03K2217/0081

摘要： In described examples, bootstrap diode circuits include a first diode having a first diode input coupled to a voltage supply and a first diode output. Described bootstrap diode circuits additionally include a second diode having a second diode input coupled to the first diode output and a second diode output and a plurality of zener diodes coupled in series. The series-coupled zener diodes are further coupled in parallel with the second diode.

公开(公告)号：US20180183432A1

公开(公告)日：2018-06-28

申请号：US15796100

申请日：2017-10-27

申请人： Renesas Electronics Corporation

发明人： Daisuke KONDO

IPC分类号： H03K17/16 ,  H02P9/00 ,  H01L29/739 ,  H01L29/861 ,  H01L49/02 ,  H01L25/065 ,  H01L23/00 ,  H02M5/458 ,  H03K17/567 ,  H03K17/94 ,  F03D9/25

CPC分类号： H03K17/168 ,  F03D9/255 ,  H01L24/48 ,  H01L25/0655 ,  H01L28/20 ,  H01L29/7397 ,  H01L29/861 ,  H01L2224/0603 ,  H01L2224/48139 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2924/1203 ,  H01L2924/1207 ,  H01L2924/13055 ,  H01L2924/19107 ,  H01L2924/30105 ,  H02M1/088 ,  H02M3/3155 ,  H02M3/325 ,  H02M5/458 ,  H02M7/5387 ,  H02M2001/0012 ,  H02M2001/0038 ,  H02P9/008 ,  H02P2101/15 ,  H03K17/08128 ,  H03K17/163 ,  H03K17/567 ,  H03K17/74 ,  H03K17/94 ,  Y02E10/725

摘要： The present disclosure attempts to improve performance of a semiconductor apparatus including a power transistor such as an IGBT. In a semiconductor apparatus, an IGBT module 110 includes IGBT elements SWa and SWb connected in parallel to each other, a resistor R1a connected to a gate terminal of the IGBT element SWa, and a diode D1a connected in parallel to the resistor R1a. In the diode D1a, a direction toward the gate terminal of the IGBT element SWa is a forward direction. With this configuration, it is possible to prevent gate oscillation and to improve switching characteristics.

公开(公告)号：US20180109254A1

公开(公告)日：2018-04-19

申请号：US15294059

申请日：2016-10-14

申请人： Infineon Technologies AG

发明人： Veli Kartal ,  Stephan Donath

IPC分类号： H03K17/687 ,  H03K17/74 ,  H02M3/07

CPC分类号： H03K17/6871 ,  H02M3/07 ,  H03K17/122 ,  H03K17/567 ,  H03K17/74

摘要： A device is suggested comprising at least two transistors, each of the transistors comprising a current path and a control terminal, wherein the current paths of the at least two transistors are arranged in parallel, wherein the control terminals of the at least two transistors are connected to a control node via at least one voltage drop component. Also, a method to efficiently control at least two transistors is provided.

公开(公告)号：US09929730B2

公开(公告)日：2018-03-27

申请号：US14644742

申请日：2015-03-11

申请人： Cisco Technology, Inc.

发明人： Seth Spiel

IPC分类号： H03K17/687 ,  H03K17/74 ,  G06F1/26

CPC分类号： H03K17/687 ,  G06F1/263 ,  H03K17/74

摘要： An apparatus includes a first power supply switch, a second power supply switch, and a control circuit. The first power supply switch includes a P-channel Metal Oxide Semiconductor Field Effect Transistor (PMOSFET) having a drain coupled to a first power rail to receive a first power voltage, a source coupled to an output node, and a gate to selectively turn on or off the PMOSFET to supply the first power voltage to the output node or isolate the first power rail. The second power supply switch receives a second power voltage and passes it to the output node if the second power voltage is present. The control circuit cooperates with the first power supply switch to control the gate voltage to turn on the PMOSFET if the first power voltage is present and the second power voltage is absent, and turn off the PMOSFET if the second power voltage is present.

公开(公告)号：US09882529B2

公开(公告)日：2018-01-30

申请号：US14293945

申请日：2014-06-02

申请人： Honeywell International Inc.

发明人： David Larsen

IPC分类号： H03C1/00 ,  H03C1/14 ,  H03K3/57 ,  H04L25/03 ,  H04L25/02 ,  H03K4/02 ,  H03K4/94 ,  H03K17/74

CPC分类号： H03C1/14 ,  H03K3/57 ,  H03K4/02 ,  H03K4/94 ,  H03K17/74 ,  H04L25/02 ,  H04L25/03828

摘要： Methods and devices are disclosed driving one or more P-Intrinsic-N (PIN) diodes by receiving an input and generating a plurality of pulses based on the input, a first pulse of the plurality of pulses controls a rise time of an RF envelope generated by an RF interface and a second pulse of the plurality of pulses controls a fall time of the RF envelope generated by the RF interface. The methods and devices may further be disclosed combining the plurality of pulses to generate a drive signal, delivering the drive signal to the RF interface including one or more PIN diodes, and generating the RF envelope by driving the one or more PIN diodes with the drive signal, and the amplitude or a pulse width of the first pulse is independently adjustable from the amplitude or the pulse width of the second pulse.

公开(公告)号：US09876497B2

公开(公告)日：2018-01-23

申请号：US14898958

申请日：2014-04-25

申请人： MAPS, INC.

发明人： Jong-Tae Hwang ,  Hyun-Ick Shin ,  Sang-O Jeon ,  Joon Rhee

IPC分类号： H03K17/74 ,  H02M7/219 ,  H02M7/217 ,  H03K3/012 ,  H03K17/13 ,  H03K17/687 ,  H02M1/08 ,  H02M1/00 ,  H03K17/30

CPC分类号： H03K17/74 ,  H02M1/08 ,  H02M7/217 ,  H02M7/219 ,  H02M2001/0009 ,  H02M2001/0051 ,  H03K3/012 ,  H03K17/133 ,  H03K17/687 ,  H03K2017/307 ,  Y02B70/1491

摘要： An active diode having an improved transistor turn-off control method is disclosed. The active diode comprises: a comparator for comparing voltages of both ends of a parasitic diode of a transistor; and a gate driver for controlling a gate terminal of the transistor according to the comparison result of the comparator, and estimates a turn-on time of the transistor and uses the same to control the gate terminal of the transistor.

公开(公告)号：US09837395B2

公开(公告)日：2017-12-05

申请号：US15097128

申请日：2016-04-12

申请人： Renesas Electronics Corporation

发明人： Hisashi Toyoda ,  Koichi Yamazaki ,  Koichi Arai ,  Tatsuhiro Seki

IPC分类号： H01L29/15 ,  H01L31/0312 ,  H01L25/18 ,  H03K17/10 ,  H03K17/687 ,  H03K17/74 ,  H01L23/00 ,  H01L25/07 ,  H01L29/10 ,  H02P27/06

CPC分类号： H01L25/18 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/1095 ,  H01L2224/0603 ,  H01L2224/48137 ,  H01L2224/48225 ,  H01L2224/49113 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1203 ,  H01L2924/1207 ,  H01L2924/13062 ,  H01L2924/13091 ,  H02P27/06 ,  H03K17/102 ,  H03K17/6871 ,  H03K17/74 ,  H03K2017/6875 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A semiconductor device includes a normally-on junction FET having a gate electrode, a source electrode and a drain electrode and a normally-off MOSFET having a gate electrode, a source electrode and a drain electrode. The source electrode of the junction FET is electrically connected to the drain electrode of the MOSFET, and the junction FET is thus connected to the MOSFET in series. The gate electrode of the junction FET is electrically connected to the gate electrode of the MOSFET.