公开(公告)号：US08728923B2

公开(公告)日：2014-05-20

申请号：US13626072

申请日：2012-09-25

Applicant: DENSO CORPORATION

Inventor： Jun Kawai ,  Tetsuji Kondou ,  Kazuhiko Sugiura ,  Nobuyuki Kato

IPC: H01L21/04 ,  H01L29/66 ,  H01L29/78 ,  H01L21/268 ,  H01L21/683

CPC classification number: H01L21/8213 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/6836 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7828 ,  H01L2221/68327

Abstract: A manufacturing method of a semiconductor device having an ohmic electrode is disclosed. The manufacturing method includes: forming a metal thin film on a rear surface of a semiconductor substrate; forming an ohmic electrode by laser annealing by irradiating the metal thin film with laser beam; and dicing the semiconductor substrate into chips by cutting at a dicing region of the semiconductor substrate. In forming the ohmic electrode, laser irradiation of the metal thin film is performed on a chip-by-chip basis while the dicing region is not being irradiated with the laser beam.

Abstract translation: 公开了一种具有欧姆电极的半导体器件的制造方法。 制造方法包括：在半导体衬底的后表面上形成金属薄膜; 通过用激光束照射金属薄膜通过激光退火形成欧姆电极; 并且通过在半导体衬底的切割区域切割将半导体衬底切割成芯片。 在形成欧姆电极时，金属薄膜的激光照射是在逐个芯片的基础上进行的，而切割区域不被激光束照射。

公开(公告)号：US20130102127A1

公开(公告)日：2013-04-25

申请号：US13626072

申请日：2012-09-25

Applicant: DENSO CORPORATION

Inventor： Jun KAWAI ,  Tetsuji Kondou ,  Kazuhiko Sugiura ,  Nobuyuki Kato

IPC: H01L21/82

CPC classification number: H01L21/8213 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/6836 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7828 ,  H01L2221/68327

Abstract: A manufacturing method of a semiconductor device having an ohmic electrode is disclosed. The manufacturing method includes: forming a metal thin film on a rear surface of a semiconductor substrate; forming an ohmic electrode by laser annealing by irradiating the metal thin film with laser beam; and dicing the semiconductor substrate into chips by cutting at a dicing region of the semiconductor substrate. In forming the ohmic electrode, laser irradiation of the metal thin film is performed on a chip-by-chip basis while the dicing region is not being irradiated with the laser beam.

Abstract translation: 公开了一种具有欧姆电极的半导体器件的制造方法。 制造方法包括：在半导体衬底的后表面上形成金属薄膜; 通过用激光束照射金属薄膜通过激光退火形成欧姆电极; 并且通过在半导体衬底的切割区域切割将半导体衬底切割成芯片。 在形成欧姆电极时，金属薄膜的激光照射是在逐个芯片的基础上进行的，而切割区域不被激光束照射。