公开(公告)号：US10461736B2

公开(公告)日：2019-10-29

申请号：US16278337

申请日：2019-02-18

Applicant: DENSO CORPORATION

Inventor： Yoshitaka Kato ,  Kenji Komiya ,  Yusuke Shindo ,  Yoshinori Hayashi ,  Kenichi Wakabayashi

IPC: H03K17/16 ,  H02M1/08 ,  H02M1/32 ,  H02M7/537 ,  H02M3/158 ,  H02M7/5387 ,  H02M1/00

Abstract: A semiconductor device turns on and off a power switching device having a gate terminal and output terminals between which an output current is produced by a gate voltage applied to the gate terminal. The semiconductor device includes: an output current detector detecting a current value correlated with the output current; a voltage detector detecting a voltage across the output terminals of the power switching device; a clamp circuit clamping the gate voltage at a predetermined value; and a controller controlling the clamp circuit to adjust the gate voltage based on the voltage detected by the voltage detector. The controller controls the clamp circuit to set the gate voltage to be at a minimum voltage according to the detected voltage to cause the output current to be larger than a threshold current required for detecting the short circuit in the power switching device.

公开(公告)号：US12255120B2

公开(公告)日：2025-03-18

申请号：US17824004

申请日：2022-05-25

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Yoshitaka Kato ,  Takeshi Endo ,  Kazuhiro Tsuruta

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/433

Abstract: A semiconductor device includes a power module, a circuit package, and a joint portion joining the power module and the circuit package. The circuit package includes a semiconductor element, a wiring layer electrically connected with the semiconductor element, a heat conductive member, and a second mold resin portion sealing the semiconductor element and the heat conductive member. The wiring layer includes a connecting portion connected with the heat conductive member. One of the connecting portion or the heat conductive member is joined with a signal wire in the power module via the joint portion. The heat conductive member penetrates the second mold resin portion in a thickness direction of the semiconductor element. The heat conductive member and the connecting portion are arranged in a straight line in the thickness direction of the semiconductor element.

公开(公告)号：US11532534B2

公开(公告)日：2022-12-20

申请号：US17172361

申请日：2021-02-10

Applicant: DENSO CORPORATION

Inventor： Yoshitaka Kato ,  Takeshi Endo

IPC: H01L23/10 ,  H01L23/367 ,  H01L23/31 ,  H01L23/00 ,  H01L23/538

Abstract: A semiconductor module includes a power element, a signal wiring, and a heat sink. The signal wiring is connected to a signal pad of the power element. The heat sink cools the power element. The power element has an active area provided by a portion where the signal pad is formed. The signal pad is thermally connected to the heat sink via the signal wiring.