公开(公告)号：US20250125214A1

公开(公告)日：2025-04-17

申请号：US18987654

申请日：2024-12-19

Applicant: DENSO CORPORATION

Inventor： Ryo KIMURA ,  Yuji KOJIMA ,  Takashi SATO ,  Yoshitsugu SAKAMOTO ,  Tomomi OKUMURA

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/31 ,  H01L25/07 ,  H02P27/06

Abstract: A semiconductor device includes a semiconductor element, a wiring member, a sintered member between a first main electrode of the semiconductor element and the wiring member, and a sealing body. The wiring member includes a base material, a metal film on a face of the base material, and an uneven oxide film. The uneven oxide film includes a thick film portion and a thin film portion. An opposing face of the wiring member opposing the semiconductor element includes a mounting portion to which the first main electrode is bonded, an outer peripheral portion formed with the thick film portion and surrounding the semiconductor element, and an intermediate portion formed with the thin film portion between the mounting portion and the outer peripheral portion. The sintered member overlaps with the mounting portion and the intermediate portion in the plan view, and is in contact with the thin film portion.

公开(公告)号：US20240071861A1

公开(公告)日：2024-02-29

申请号：US18504271

申请日：2023-11-08

Applicant: DENSO CORPORATION

Inventor： Ryo KIMURA ,  Yuji KOJIMA ,  Takashi SATO ,  Yoshitsugu SAKAMOTO ,  Tomomi OKUMURA

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/31 ,  H01L25/07

CPC classification number: H01L23/3735 ,  H01L23/3142 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H02P27/06

Abstract: A semiconductor device includes a semiconductor element, a wiring member, a sintered member between a first main electrode of the semiconductor element and the wiring member, and a sealing body. The wiring member includes a base material, a metal film on a face of the base material, and an uneven oxide film. The uneven oxide film includes a thick film portion and a thin film portion. An opposing face of the wiring member opposing the semiconductor element includes a mounting portion to which the first main electrode is bonded, an outer peripheral portion formed with the thick film portion and surrounding the semiconductor element, and an intermediate portion formed with the thin film portion between the mounting portion and the outer peripheral portion. The sintered member overlaps with the mounting portion and the intermediate portion in the plan view, and is in contact with the thin film portion.

公开(公告)号：US20250118623A1

公开(公告)日：2025-04-10

申请号：US18988013

申请日：2024-12-19

Applicant: DENSO CORPORATION

Inventor： Ryo KIMURA ,  Yuji KOJIMA ,  Takashi SATO ,  Yoshitsugu SAKAMOTO ,  Tomomi OKUMURA

IPC: H01L23/00 ,  H01L23/538 ,  H01L25/07

Abstract: A semiconductor device includes a semiconductor element, a wiring member, a sintered member between a first main electrode of the semiconductor element and the wiring member, and a sealing body. The wiring member includes a base material, a metal film on a face of the base material, and an uneven oxide film. The uneven oxide film includes a thick film portion and a thin film portion. An opposing face of the wiring member opposing the semiconductor element includes a mounting portion to which the first main electrode is bonded, an outer peripheral portion formed with the thick film portion and surrounding the semiconductor element, and an intermediate portion formed with the thin film portion between the mounting portion and the outer peripheral portion. The sintered member overlaps with the mounting portion and the intermediate portion in the plan view, and is in contact with the thin film portion.

公开(公告)号：US20230130647A1

公开(公告)日：2023-04-27

申请号：US18146582

申请日：2022-12-27

Applicant: DENSO CORPORATION

Inventor： Tetsuto YAMAGISHI ,  Yoshitsugu SAKAMOTO ,  Ryoichi KAIZU ,  Yuki INABA ,  Hiroki YOSHIKAWA

IPC: H01L23/367 ,  H01L23/00 ,  B23K35/26 ,  C22C13/02

Abstract: A semiconductor device includes a semiconductor chip having first and second main electrodes disposed on opposite surfaces of a silicon carbide substrate, first and second heat dissipation members disposed so as to sandwich the semiconductor chip, and joining members disposed between the first main electrode and the first heat dissipation member and between the second main electrode and the second heat dissipation member. At least one of the joining members is made of a lead-free solder having an alloy composition that contains 3.2 to 3.8 mass % Ag, 0.6 to 0.8 mass % Cu, 0.01 to 0.2 mass % Ni, x mass % Sb, y mass % Bi, 0.001 to 0.3 mass % Co, 0.001 to 0.2 mass % P, and a balance of Sn, where x and y satisfy relational expressions of x+2y≤11 mass %, x+14y≤42 mass %, and x≥5.1 mass %.