公开(公告)号：US20160322726A1

公开(公告)日：2016-11-03

申请号：US15110224

申请日：2014-12-30

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Takuya KADOGUCHI ,  Takahiro HIRANO ,  Arata HARADA ,  Tomomi OKUMURA ,  Keita FUKUTANI ,  Masayoshi NISHIHATA

IPC: H01R13/03 ,  H01R13/05 ,  H01R13/11 ,  H01R12/71

CPC classification number: H01R13/03 ,  H01R12/716 ,  H01R13/05 ,  H01R13/11 ,  H01R2201/26

Abstract: A terminal connecting structure includes: a male terminal; and a female terminal to which the male terminal is fitted. The male terminal includes a first metal material and a first metal film that is formed on an outermost surface of the male terminal to coat the first metal material directly or indirectly. The female terminal includes a second metal material and a second metal film that is formed on an outermost surface of the female terminal to coat the second metal material directly or indirectly. A hardness of the first metal material is different from a hardness of the second metal material.

Abstract translation: 终端连接结构包括：公终端; 以及一个母端子，该公端子被安装到该母端子上。 阳端子包括第一金属材料和第一金属膜，其形成在阳端子的最外表面上以直接或间接地涂覆第一金属材料。 阴端子包括第二金属材料和第二金属膜，其形成在阴端子的最外表面上以直接或间接地涂覆第二金属材料。 第一金属材料的硬度与第二金属材料的硬度不同。

公开(公告)号：US20170117212A1

公开(公告)日：2017-04-27

申请号：US15398178

申请日：2017-01-04

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Takuya KADOGUCHI ,  Takahiro HIRANO ,  Takanori KAWASHIMA ,  Tomomi OKUMURA ,  Masayoshi NISHIHATA

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/051

CPC classification number: H01L23/49568 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/3672 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L25/072 ,  H01L29/7397 ,  H01L29/861 ,  H01L2224/2612 ,  H01L2224/26175 ,  H01L2224/29111 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83007 ,  H01L2224/83101 ,  H01L2224/83203 ,  H01L2224/83385 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83815 ,  H01L2224/92242 ,  H01L2224/92247 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00

Abstract: A semiconductor device includes: opposed first and second metal plates; a plurality of semiconductor elements each interposed between the first metal plate and the second metal plate; a metal block interposed between the first metal plate and each of the semiconductor elements; a solder member interposed between the first metal plate and the metal block and connecting the first metal plate to the metal block; and a resin molding sealing the semiconductor elements and the metal block. A face of the first metal plate, which is on an opposite side of a face of the first metal plate to which the metal block is connected via the solder member, is exposed from the resin molding. The first metal plate has a groove formed along an outer periphery of a region in which the solder member is provided, the groove collectively surrounding the solder member.

公开(公告)号：US20170018484A1

公开(公告)日：2017-01-19

申请号：US15123794

申请日：2015-01-15

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Takuya KADOGUCHI ,  Takahiro HIRANO ,  Takanori KAWASHIMA ,  Keita FUKUTANI ,  Tomomi OKUMURA ,  Masayoshi NISHIHATA

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/49513 ,  H01L21/4825 ,  H01L21/4882 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/3142 ,  H01L23/4334 ,  H01L23/49537 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/40245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84138 ,  H01L2224/92165 ,  H01L2924/00014 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05599

Abstract: The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

Abstract translation: 半导体器件包括半导体元件和电连接到半导体元件的顶面侧电极的导电的第一板状部件，并且包括从侧面突出的第一接合部，以及导电第二部件 板状部分包括从侧面突出的第二接合部。 第一接合部的底面和第二接合部的顶面彼此面对，并且经由导电接合材料电连接。 在第一接合部的底面和第二接合部的顶面彼此面对的区域中设置接合材料厚度确保装置，以确保导电接合材料的上部 第二接合部的前端和第一接合部的底面。

公开(公告)号：US20250125214A1

公开(公告)日：2025-04-17

申请号：US18987654

申请日：2024-12-19

Applicant: DENSO CORPORATION

Inventor： Ryo KIMURA ,  Yuji KOJIMA ,  Takashi SATO ,  Yoshitsugu SAKAMOTO ,  Tomomi OKUMURA

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/31 ,  H01L25/07 ,  H02P27/06

Abstract: A semiconductor device includes a semiconductor element, a wiring member, a sintered member between a first main electrode of the semiconductor element and the wiring member, and a sealing body. The wiring member includes a base material, a metal film on a face of the base material, and an uneven oxide film. The uneven oxide film includes a thick film portion and a thin film portion. An opposing face of the wiring member opposing the semiconductor element includes a mounting portion to which the first main electrode is bonded, an outer peripheral portion formed with the thick film portion and surrounding the semiconductor element, and an intermediate portion formed with the thin film portion between the mounting portion and the outer peripheral portion. The sintered member overlaps with the mounting portion and the intermediate portion in the plan view, and is in contact with the thin film portion.

公开(公告)号：US20240071861A1

公开(公告)日：2024-02-29

申请号：US18504271

申请日：2023-11-08

Applicant: DENSO CORPORATION

Inventor： Ryo KIMURA ,  Yuji KOJIMA ,  Takashi SATO ,  Yoshitsugu SAKAMOTO ,  Tomomi OKUMURA

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/31 ,  H01L25/07

CPC classification number: H01L23/3735 ,  H01L23/3142 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H02P27/06

Abstract: A semiconductor device includes a semiconductor element, a wiring member, a sintered member between a first main electrode of the semiconductor element and the wiring member, and a sealing body. The wiring member includes a base material, a metal film on a face of the base material, and an uneven oxide film. The uneven oxide film includes a thick film portion and a thin film portion. An opposing face of the wiring member opposing the semiconductor element includes a mounting portion to which the first main electrode is bonded, an outer peripheral portion formed with the thick film portion and surrounding the semiconductor element, and an intermediate portion formed with the thin film portion between the mounting portion and the outer peripheral portion. The sintered member overlaps with the mounting portion and the intermediate portion in the plan view, and is in contact with the thin film portion.

公开(公告)号：US20210217680A1

公开(公告)日：2021-07-15

申请号：US17213774

申请日：2021-03-26

Applicant: DENSO CORPORATION

Inventor： Masanori OOSHIMA ,  Tomomi OKUMURA ,  Takahiro HIRANO

IPC: H01L23/367 ,  H01L23/10 ,  H01L23/31

Abstract: A semiconductor device incudes: a semiconductor chip that includes an active area and an outer peripheral area surrounding the active area; a metal member that includes one face including a mounting portion on which the semiconductor chip is mounted and a peripheral member surrounding the mounting portion; a joining member that connects the semiconductor chip and the metal member; and a sealing resin body. The metal member includes, as the peripheral portion, an adhesive portion that surrounds the mounting portion and adheres to the sealing resin body, and a non-adhesive portion that is placed between the mounting portion and the adhesive portion. An entire width is placed in an area overlapping the semiconductor chip in a projection view in a thickness direction of the semiconductor chip.

公开(公告)号：US20160315037A1

公开(公告)日：2016-10-27

申请号：US15103594

申请日：2014-12-09

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Takuya KADOGUCHI ,  Takahiro HIRANO ,  Arata HARADA ,  Tomomi OKUMURA ,  Keita FUKUTANI ,  Masayoshi NISHIHATA

IPC: H01L23/495 ,  H02M7/00 ,  H01L29/861 ,  H01L23/31 ,  H01L29/739

CPC classification number: H01L23/49562 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/4334 ,  H01L23/49513 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/33 ,  H01L29/7395 ,  H01L29/861 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part.

Abstract translation: 半导体器件包括第一开关元件; 第二开关元件; 第一金属构件; 第二金属构件; 在高电位侧具有潜力的第一终端; 在低电位侧具有电位的第二端子; 具有中点电位的第三终端; 和树脂部分。 第一个潜在的部分具有等于第一个终端的潜力的潜力。 第二潜在部分具有与第二终端的电位相等的电位。 第三个潜在部分具有与第三个终端的电位相等的电位。 第一电位部分和第二电位部分之间的第一爬电距离长于第一电位部分和第三电位部分之间的第二爬电距离的最小值和第二电位部分与第三电位部分之间的第三爬电距离 。

公开(公告)号：US20160218047A1

公开(公告)日：2016-07-28

申请号：US14917618

申请日：2014-09-09

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Tomomi OKUMURA ,  Takuya KADOGUCHI

IPC: H01L23/367 ,  H01L23/31

CPC classification number: H01L23/3672 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/4334 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/33 ,  H01L25/07 ,  H01L25/18 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In a semiconductor device, a second heat sink and a third heat sink are electrically connected by a joint portion in an alignment direction in which a first switching element and a second switching element are aligned. A second power-supply terminal is disposed in the alignment direction in a region between a first power-supply terminal and an output terminal and between the second heat sink and the third heat sink. In an encapsulation resin body, at least one of a shortest distance between a first potential portion at same potential as the first power-supply terminal and a third potential portion at same potential as the output terminal and a shortest distance between a second potential portion at same potential as the second power-supply terminal and the third potential portion is shorter than a shortest distance between the first potential portion and the second potential portion.

Abstract translation: 在半导体器件中，第二散热器和第三散热器通过第一开关元件和第二开关元件对准的取向方向上的接合部电连接。 第二电源端子在第一电源端子和输出端子之间以及第二散热器和第三散热器之间的区域中沿着排列方向设置。 在封装树脂体中，与第一电源端子具有相同电位的第一电位部分和与输出端子具有相同电位的第三电位部分之间的最短距离中的至少一个和第二电位部分之间的最短距离 与第二电源端子和第三电位部分相同的电位比第一电位部分和第二电位部分之间的最短距离短。

公开(公告)号：US20150162274A1

公开(公告)日：2015-06-11

申请号：US14528383

申请日：2014-10-30

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Takuya KADOGUCHI ,  Takahiro HIRANO ,  Tomomi OKUMURA ,  Keita FUKUTANI ,  Masayoshi NISHIHATA

IPC: H01L23/498 ,  H01L23/047 ,  H01L23/31

CPC classification number: H01L23/047 ,  H01L21/565 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/13055 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor apparatus is disclosed, which includes a semiconductor element provided on a plane; a sealing resin that seals the semiconductor element; a terminal that is electrically connected to the semiconductor element and includes a part that projects from a predetermined surface of the sealing resin; and a concave portion that is recessed toward a side of the semiconductor element from the predetermined surface, when viewed in a direction perpendicular to the plane. A side of the concave portion on the side of the semiconductor element includes a rounded shape, when viewed in the direction perpendicular to the plane.

Abstract translation: 公开了一种半导体装置，其包括设置在平面上的半导体元件; 密封半导体元件的密封树脂; 电连接到半导体元件并且包括从密封树脂的预定表面突出的部分的端子; 以及当从与该平面垂直的方向观察时，从该预定表面向该半导体元件的一侧凹入的凹部。 当从垂直于该平面的方向观察时，半导体元件侧的凹部的一侧包括圆形。

公开(公告)号：US20250118623A1

公开(公告)日：2025-04-10

申请号：US18988013

申请日：2024-12-19

Applicant: DENSO CORPORATION

Inventor： Ryo KIMURA ,  Yuji KOJIMA ,  Takashi SATO ,  Yoshitsugu SAKAMOTO ,  Tomomi OKUMURA

IPC: H01L23/00 ,  H01L23/538 ,  H01L25/07

Abstract: A semiconductor device includes a semiconductor element, a wiring member, a sintered member between a first main electrode of the semiconductor element and the wiring member, and a sealing body. The wiring member includes a base material, a metal film on a face of the base material, and an uneven oxide film. The uneven oxide film includes a thick film portion and a thin film portion. An opposing face of the wiring member opposing the semiconductor element includes a mounting portion to which the first main electrode is bonded, an outer peripheral portion formed with the thick film portion and surrounding the semiconductor element, and an intermediate portion formed with the thin film portion between the mounting portion and the outer peripheral portion. The sintered member overlaps with the mounting portion and the intermediate portion in the plan view, and is in contact with the thin film portion.