公开(公告)号：US20210005744A1

公开(公告)日：2021-01-07

申请号：US17025213

申请日：2020-09-18

Applicant: DENSO CORPORATION

Inventor： Yasuhiro EBIHARA ,  Yuichi TAKEUCHI ,  Hidefumi TAKAYA ,  Yukihiro WATANABE

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08

Abstract: A semiconductor device includes: an inversion type semiconductor element that includes: a substrate having a first conductivity type or a second conductivity type; a first conductivity type layer formed on the substrate; a second conductivity type region that is formed on the first conductivity type layer; a JFET portion that is formed on the first conductivity type layer, is sandwiched by the second conductivity type region to be placed; a source region that is formed on the second conductivity region; a gate insulation film formed on a channel region that is a part of the second conductivity type region; a gate electrode formed on the gate insulation film; an interlayer insulation film covering the gate electrode and the gate insulation film, and including a contact hole; a source electrode electrically connected to the source region through the contact hole; and a drain electrode formed on a back side of the substrate.