公开(公告)号：US20240371677A1

公开(公告)日：2024-11-07

申请号：US18775291

申请日：2024-07-17

Applicant: DENSO CORPORATION ,  OSAKA UNIVERSITY

Inventor： Kantaro HORI ,  Bahman Soltani ,  Kazufumi AOKI ,  Naoki Maruno ,  Yuya KATO ,  Kazuya Yamamura ,  Xu Yang

IPC: H01L21/683

Abstract: A chuck apparatus is configured to hold a wafer during planarization of the wafer with the aid of anodizing. The chuck apparatus includes a chuck cover, a suction portion, and an energizing portion. The suction portion includes a suction surface that suctions the wafer. The energizing portion is provided in the suction portion so as to come into contact and energize the wafer suctioned by the suction portion. The chuck cover covers the suction portion and the energizing portion in an insulating manner while exposing the suction surface.

公开(公告)号：US20220380927A1

公开(公告)日：2022-12-01

申请号：US17750465

申请日：2022-05-23

Applicant: DENSO CORPORATION ,  OSAKA UNIVERSITY

Inventor： Kazufumi Aoki ,  Naoki Maruno ,  Bahman Soltani ,  Yuya Kato ,  Kazuya Yamamura ,  Xu Yang

IPC: C25D11/32 ,  B24B29/00 ,  C25D21/12

Abstract: A surface processing method for a SiC substrate includes the following processes or steps: anodizing a workpiece surface of the SiC substrate by passing a current having a current density of 15 mA/cm2 or more through the SiC substrate as an anode in the presence of an electrolyte; disposing a grinding wheel layer of a surface processing pad to the workpiece surface and selectively removing, with the grinding wheel layer, an oxide formed on the workpiece surface through anodization; and performing, simultaneously or sequentially, the anodization of the workpiece surface and the selective removal of the oxide formed on the workpiece surface with the grinding wheel layer.