公开(公告)号：US20240371677A1

公开(公告)日：2024-11-07

申请号：US18775291

申请日：2024-07-17

Applicant: DENSO CORPORATION ,  OSAKA UNIVERSITY

Inventor： Kantaro HORI ,  Bahman Soltani ,  Kazufumi AOKI ,  Naoki Maruno ,  Yuya KATO ,  Kazuya Yamamura ,  Xu Yang

IPC: H01L21/683

Abstract: A chuck apparatus is configured to hold a wafer during planarization of the wafer with the aid of anodizing. The chuck apparatus includes a chuck cover, a suction portion, and an energizing portion. The suction portion includes a suction surface that suctions the wafer. The energizing portion is provided in the suction portion so as to come into contact and energize the wafer suctioned by the suction portion. The chuck cover covers the suction portion and the energizing portion in an insulating manner while exposing the suction surface.

公开(公告)号：US20220380927A1

公开(公告)日：2022-12-01

申请号：US17750465

申请日：2022-05-23

Applicant: DENSO CORPORATION ,  OSAKA UNIVERSITY

Inventor： Kazufumi Aoki ,  Naoki Maruno ,  Bahman Soltani ,  Yuya Kato ,  Kazuya Yamamura ,  Xu Yang

IPC: C25D11/32 ,  B24B29/00 ,  C25D21/12

Abstract: A surface processing method for a SiC substrate includes the following processes or steps: anodizing a workpiece surface of the SiC substrate by passing a current having a current density of 15 mA/cm2 or more through the SiC substrate as an anode in the presence of an electrolyte; disposing a grinding wheel layer of a surface processing pad to the workpiece surface and selectively removing, with the grinding wheel layer, an oxide formed on the workpiece surface through anodization; and performing, simultaneously or sequentially, the anodization of the workpiece surface and the selective removal of the oxide formed on the workpiece surface with the grinding wheel layer.

公开(公告)号：US20240316824A1

公开(公告)日：2024-09-26

申请号：US18735416

申请日：2024-06-06

Applicant: DENSO CORPORATION

Inventor： Koichiro Yasuda ,  Ryota Takagi ,  Tomoki Kawazu ,  Sodai Nomura ,  Hideaki Shirai ,  Bahman Soltani ,  Shunsuke Sobajima

IPC: B28D5/00 ,  B23K26/364

CPC classification number: B28D5/0011 ,  B23K26/364 ,  B28D5/0052

Abstract: A wafer production method for producing a wafer from an ingot oriented to have a c-axis inclined in an off-angle direction at an off-angle more than zero degree From a central axis includes steps of emitting a laser beam to a top surface that is one of end surfaces of the ingot opposed to each other in height direction thereof to form a separation layer at a depth from the top surface of the ingot which corresponds to a thickness of the wafer, applying a physical load in a single direction to a first end that is one of ends of the ingot which are opposed to each other in an off-angle direction to remove a wafer precursor from the ingot at the separation layer, and planarizing a major surface of a removed object derived by separating the wafer precursor from the ingot at the separation layer, thereby forming a wafer. The ingot has a given degree of transmittance to the laser beam. The wafer precursor is created by a portion of the ingot between the top surface of the ingot and the separation layer.

公开(公告)号：US11795576B2

公开(公告)日：2023-10-24

申请号：US17211962

申请日：2021-03-25

Applicant: DENSO CORPORATION

Inventor： Bahman Soltani ,  Kazutoshi Sasayama ,  Yasushi Hibi

IPC: C30B29/36 ,  C30B33/02 ,  C30B23/02 ,  H01L29/16

CPC classification number: C30B29/36 ,  C30B33/02 ,  C30B23/02 ,  H01L29/1608

Abstract: Provided is a production method of a SiC wafer which can increase the yield of a SiC wafer which can be prepared from a produced SiC single crystal ingot and the product yield of a semiconductor chip.
In forming cylindrical column parts from a SiC single crystal ingot, the diameters of the cylindrical column parts are gradually changed. Specifically, the SiC single crystal ingot configured to have a frustoconical shape is made into, instead of cylindrical column parts all having identical diameters, cylindrical column parts whose diameters increase from the upper surface toward the lower surface of the SiC single crystal ingot.