公开(公告)号：US20240038711A1

公开(公告)日：2024-02-01

申请号：US18359976

申请日：2023-07-27

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.

发明人： TERUAKI KUMAZAWA ,  MASASHI UECHA ,  YUJI NAGUMO ,  MASARU OKUDA ,  MASATAKE NAGAYA ,  MITSURU KITAICHI ,  AKIRA MORI ,  NAOYA KIYAMA ,  MASAKAZU TAKEDA

IPC分类号： H01L23/00

CPC分类号： H01L24/29 ,  H01L24/27 ,  H01L2224/29083 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29144 ,  H01L2224/29019 ,  H01L2224/2784

摘要： A semiconductor device includes a semiconductor substrate and a metal layer disposed on a surface of the semiconductor substrate. The metal layer includes a first metal layer and a second metal layer. The second metal layer covers a surface of the first metal layer and has a higher solder wettability than the first metal layer. The second metal layer is exposed on a main surface of the metal layer. The first metal layer is exposed on a side surface of the metal layer. The metal layer has a protruding portion on the main surface. The protruding portion extends to make one round along an outer peripheral edge of the main surface.

公开(公告)号：US20240038590A1

公开(公告)日：2024-02-01

申请号：US18360322

申请日：2023-07-27

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.

发明人： MASASHI UECHA ,  YUJI NAGUMO ,  MASARU OKUDA ,  MASATAKE NAGAYA ,  MITSURU KITAICHI ,  AKIRA MORI ,  NAOYA KIYAMA ,  MASAKAZU TAKEDA

IPC分类号： H01L21/78 ,  H01L21/304

CPC分类号： H01L21/78 ,  H01L21/304

摘要： A semiconductor device includes a semiconductor substrate having a quadrangular shape when viewed from above and having a front surface, a rear surface opposite to the front surface, and four side surfaces connecting the front surface and the rear surface. Each of the side surfaces has a step section in which a plurality of protruding portions and a plurality of recessed portions alternately and repeatedly appear along a direction in which a peripheral edge of the front surface of the semiconductor substrate extends.

公开(公告)号：US20240030056A1

公开(公告)日：2024-01-25

申请号：US18324277

申请日：2023-05-26

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.

发明人： MASASHI UECHA ,  YUJI NAGUMO ,  MASARU OKUDA ,  MASATAKE NAGAYA ,  MITSURU KITAICHI ,  AKIRA MORI ,  NAOYA KIYAMA ,  MASAKAZU TAKEDA

IPC分类号： H01L21/683 ,  H01L21/304 ,  H01L21/78

CPC分类号： H01L21/6836 ,  H01L21/3043 ,  H01L21/78 ,  H01L2221/68327

摘要： A manufacturing method of a semiconductor device includes preparing a semiconductor substrate having a plurality of element regions and having a first surface and a second surface opposite to each other, forming a crack extending in a thickness direction of the semiconductor substrate along a boundary between the plurality of element regions by pressing a pressing member against the first surface of the semiconductor substrate along the boundary, forming a metal film over the plurality of element regions on the first surface of the semiconductor substrate after the forming of the crack, and dividing the semiconductor substrate and the metal film along the boundary by pressing a dividing member against the semiconductor substrate along the boundary from a direction facing the second surface of the semiconductor substrate after the forming of the metal film.