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公开(公告)号：US12119322B2
公开(公告)日：2024-10-15
申请号：US18014272
申请日：2021-06-28
申请人： SUPERUFO291 TEC
发明人： Akira Fukui , Toshie Fukui
CPC分类号： H01L24/29 , B23K35/0233 , B23K35/3006 , B23K2101/40 , H01L24/05 , H01L24/32 , H01L2224/05155 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/2908 , H01L2224/29111 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2924/0132 , H01L2924/10272 , H01L2924/13055
摘要： A bonding member 10 used for bonding a semiconductor device 20 and a substrate 30, the bonding member including: a thermal stress relieving layer 11 made of any of Ag, Cu, Au, and Al; a first Ag brazing material layer 12 containing Ag and Sn as main components and provided on a side of the thermal stress relieving layer to which the semiconductor device is bonded; a second Ag brazing material layer 13 containing Ag and Sn as main components and provided on a side of the thermal stress relieving layer to which the substrate is bonded; a first barrier layer 14 made of Ni and/or Ni alloy and provided between the thermal stress relieving layer and the first Ag brazing material layer; and a second barrier layer 15 made of Ni and/or Ni alloy and provided between the stress relieving layer and the second Ag brazing material layer, in which a thermal conductivity of the bonding member after a power cycle test is 200 W/m·K or more.
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公开(公告)号：US20240335912A1
公开(公告)日：2024-10-10
申请号：US18750260
申请日：2024-06-21
IPC分类号： B23K35/02 , B22F1/052 , B23K35/30 , B23K101/40 , H01L21/56 , H01L23/00 , H01L23/31 , H01L23/495
CPC分类号： B23K35/0244 , B22F1/052 , B23K35/0227 , B23K35/3033 , H01L21/56 , H01L23/3121 , H01L23/49582 , H01L24/27 , H01L24/29 , B22F2301/15 , B22F2304/10 , B23K2101/40 , H01L2224/2746 , H01L2224/29111 , H01L2224/29118 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169
摘要： A layer structure includes a first layer including at least one material selected from a first group consisting of nickel, copper, gold, silver, palladium, tin, zinc, platinum, and an alloy of any of these materials; a third layer including at least one material selected from a second group consisting of nickel, copper, gold, palladium, tin, silver, zinc, platinum, and an alloy of any of these materials; and a second layer between the first layer and the third layer. The second layer consists of or essentially consists of nickel and tin. The second layer includes an intermetallic phase of nickel and tin. Methods of forming the layer structure, a chip package and a chip arrangement are also described.
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公开(公告)号：US20240243091A1
公开(公告)日：2024-07-18
申请号：US18415074
申请日：2024-01-17
发明人： Richard McDonough , Milos Lazic , David P. Socha
CPC分类号： H01L24/27 , H01L21/4882 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/16 , H01L24/73 , H01L2224/16221 , H01L2224/2743 , H01L2224/29083 , H01L2224/29101 , H01L2224/29105 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29116 , H01L2224/29118 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29166 , H01L2224/29171 , H01L2224/2918 , H01L2224/29184 , H01L2224/32245 , H01L2224/32506 , H01L2224/73253 , H01L2224/83801 , H01L2924/01048 , H01L2924/0133
摘要： Thermal interface materials deposited in solid form, in a layered manner, and their uses in electronics assembly are described. In one implementation, a method includes: forming an assembly including multiple solid metal thermal interface materials (TIMs) between a first device and a second device such that a first surface of the solid metal TIMs is in touching relation with a surface of the first device, and a second surface of the solid metal TIMs opposite the first surface is in touching relation with a surface of the second device, the solid metal TIMs including a first solid metal TIM and a second solid metal TIM; and forming a liquid TIM alloy from the solid metal TIMs by heating the assembly above a first solidus temperature of the first solid metal TIM, the liquid TIM alloy having a second solidus temperature below the first solidus temperature.
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4.发明公开公开(公告)号：US20240170435A1
公开(公告)日：2024-05-23
申请号：US18419382
申请日：2024-01-22
发明人： Eiichi Nakano , Mark E. Tuttle
IPC分类号： H01L23/00 , H01L25/065
CPC分类号： H01L24/29 , H01L24/27 , H01L24/83 , H01L25/0657 , H01L2224/279 , H01L2224/29076 , H01L2224/29147 , H01L2224/29155 , H01L2224/2919 , H01L2224/83851
摘要： An anisotropic conductive film (ACF) is formed with an ordered array of discrete regions that include a conductive carbon-based material. The discrete regions, which may be formed at small pitch, are embedded in at least one adhesive dielectric material. The ACF may be used to mechanically and electrically interconnect conductive elements of initially-separate semiconductor dice in semiconductor device assemblies. Methods of forming the ACF include forming a precursor structure with the conductive carbon-based material and then joining the precursor structure to a separately-formed structure that includes adhesive dielectric material to be included in the ACF. Sacrificial materials of the precursor structure may be removed and additional adhesive dielectric material formed to embed the discrete regions with the conductive carbon-based material in the adhesive dielectric material of the ACF.
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公开(公告)号：US20240170434A1
公开(公告)日：2024-05-23
申请号：US18193012
申请日：2023-03-30
发明人： Chien-Hsun CHUANG
IPC分类号： H01L23/00
CPC分类号： H01L24/29 , H01L24/27 , H01L2224/2745 , H01L2224/29082 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29166 , H01L2224/29171
摘要： A back side metallization thin film structure is provided, which includes a wafer and a metallic nano-twinned thin film on the back side of the wafer. A plurality of integrated circuit devices are formed on the front side of the wafer. The metallic nano-twinned thin film includes silver, copper, gold, palladium, or nickel. The metallic nano-twinned thin film has a transition layer near the wafer and a twin layer away from the wafer. The twin layer accounts for at least 70% of the thickness of the metallic nano-twinned thin film and includes parallel-arranged twin boundaries. The parallel-arranged twin boundaries include more than 50% of (111) crystal orientation. The back side metallization thin film structure is formed by activating the wafer surface by ion beam bombardment, followed by an evaporation deposition process performed on the activated wafer surface with simultaneous ion beam bombardment.
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公开(公告)号：US20240162109A1
公开(公告)日：2024-05-16
申请号：US18152615
申请日：2023-01-10
发明人： Hung-Yi Kuo , Chen-Hua Yu , Kuo-Chung Yee , Yu-Jen Lien , Ke-Han Shen , Wei-Kong Sheng , Chung-Shi Liu , Szu-Wei Lu , Tsung-Fu Tsai , Chung-Ju Lee , Chih-Ming Ke
IPC分类号： H01L23/367 , H01L21/56 , H01L23/00 , H01L23/31 , H01L23/373 , H10B80/00
CPC分类号： H01L23/3677 , H01L21/56 , H01L23/3128 , H01L23/3736 , H01L24/16 , H01L24/32 , H01L24/33 , H01L24/73 , H10B80/00 , H01L2224/16225 , H01L2224/29124 , H01L2224/29147 , H01L2224/29155 , H01L2224/29166 , H01L2224/29172 , H01L2224/32245 , H01L2224/33181 , H01L2224/73204 , H01L2224/73253
摘要： In an embodiment, a package includes an integrated circuit device attached to a substrate; an encapsulant disposed over the substrate and laterally around the integrated circuit device, wherein a top surface of the encapsulant is coplanar with the top surface of the integrated circuit device; and a heat dissipation structure disposed over the integrated circuit device and the encapsulant, wherein the heat dissipation structure includes a spreading layer disposed over the encapsulant and the integrated circuit device, wherein the spreading layer includes a plurality of islands, wherein at least a portion of the islands are arranged as lines extending in a first direction in a plan view; a plurality of pillars disposed over the islands of the spreading layer; and nanostructures disposed over the pillars.
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公开(公告)号：US11881468B2
公开(公告)日：2024-01-23
申请号：US17456066
申请日：2021-11-22
发明人： Eiichi Nakano , Mark E. Tuttle
IPC分类号： H01L23/00 , H01L25/065
CPC分类号： H01L24/29 , H01L24/27 , H01L24/83 , H01L25/0657 , H01L2224/279 , H01L2224/2919 , H01L2224/29076 , H01L2224/29147 , H01L2224/29155 , H01L2224/83851
摘要： An anisotropic conductive film (ACF) is formed with an ordered array of discrete regions that include a conductive carbon-based material. The discrete regions, which may be formed at small pitch, are embedded in at least one adhesive dielectric material. The ACF may be used to mechanically and electrically interconnect conductive elements of initially-separate semiconductor dice in semiconductor device assemblies. Methods of forming the ACF include forming a precursor structure with the conductive carbon-based material and then joining the precursor structure to a separately-formed structure that includes adhesive dielectric material to be included in the ACF. Sacrificial materials of the precursor structure may be removed and additional adhesive dielectric material formed to embed the discrete regions with the conductive carbon-based material in the adhesive dielectric material of the ACF.
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公开(公告)号：US20230402440A1
公开(公告)日：2023-12-14
申请号：US18083845
申请日：2022-12-19
发明人： Guangjia WANG , Haijiang YUAN
IPC分类号： H01L25/16 , H01L25/075 , H01L33/62 , H01L23/00
CPC分类号： H01L25/167 , H01L25/0753 , H01L33/62 , H01L24/13 , H01L24/29 , H01L24/32 , H01L2933/0066 , H01L2224/13021 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/2919 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/2916 , H01L2224/29118 , H01L2224/29193 , H01L2224/32145
摘要： A display panel, a display screen, and a manufacturing method of a display screen are provided. The display panel includes a light-emitting assembly, a driving assembly, multiple first conductive members, and multiple second conductive members. The light-emitting assembly includes multiple light-emitting units, where each of the multiple light-emitting units includes a first electrode and a second electrode spaced apart from the first electrode, and the first electrode surrounds the second electrode. The driving assembly includes multiple driving units, where one of the multiple driving units is disposed in correspondence with one of the multiple light-emitting units, and different driving units correspond to different light-emitting units. Each of the multiple driving units includes a third electrode and a fourth electrode spaced apart from the third electrode, and the third electrode surrounds the fourth electrode. Each of the multiple first conductive members couples the first electrode with the third electrode.
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公开(公告)号：US20230395550A1
公开(公告)日：2023-12-07
申请号：US18014272
申请日：2021-06-28
申请人： SUPERUFO291 TEC
发明人： Akira FUKUI , Toshie FUKUI
CPC分类号： H01L24/29 , B23K35/3006 , B23K35/0233 , H01L2924/10272 , H01L2924/13055 , H01L2224/05573 , H01L2224/05655 , H01L2224/05657 , H01L2224/05639 , H01L2224/05647 , H01L2224/05644 , H01L2224/05155 , H01L2224/29139 , H01L2224/29155 , H01L2224/29144 , H01L2224/29111 , H01L2224/32245 , H01L2224/29147 , H01L2224/29124 , H01L2224/2908 , H01L24/32 , H01L24/05 , H01L2924/0132 , B23K2101/40
摘要： A bonding member 10 used for bonding a semiconductor device 20 and a substrate 30, the bonding member including: a thermal stress relieving layer 11 made of any of Ag, Cu, Au, and Al; a first Ag brazing material layer 12 containing Ag and Sn as main components and provided on a side of the thermal stress relieving layer to which the semiconductor device is bonded; a second Ag brazing material layer 13 containing Ag and Sn as main components and provided on a side of the thermal stress relieving layer to which the substrate is bonded; a first barrier layer 14 made of Ni and/or Ni alloy and provided between the thermal stress relieving layer and the first Ag brazing material layer; and a second barrier layer 15 made of Ni and/or Ni alloy and provided between the stress relieving layer and the second Ag brazing material layer, in which a thermal conductivity of the bonding member after a power cycle test is 200 W/m·K or more.
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公开(公告)号：US20230387095A1
公开(公告)日：2023-11-30
申请号：US18208034
申请日：2023-06-09
发明人： Jaeseok Kim , Eunhye Kim , Sangmoo Park , Yoonsuk Lee , Seungryong Han
CPC分类号： H01L25/167 , H01L24/29 , H01L24/32 , H01L2224/2919 , H01L2224/29144 , H01L2224/29155 , H01L2224/29164 , H01L2224/29021 , H01L2224/29028 , H01L2224/32147 , H01L2924/12041
摘要： In some embodiments, a display module for implementing an image using an inorganic light emitting device includes a substrate, a thin film transistor (TFT) layer provided on the substrate, a plurality of connection pads provided on the TFT layer, an anisotropic conductive layer provided on the TFT layer, an inorganic light emitting element bonded to the anisotropic conductive layer, and a conductive ball control layer provided in a surrounding area of the plurality of connection pads. The anisotropic conductive layer includes an adhesive layer and a plurality of conductive balls distributed inside the adhesive layer. The inorganic light emitting element includes a plurality of electrodes corresponding to the plurality of connection pads. The conductive ball control layer is configured to restrict the plurality of conductive balls from moving in a direction perpendicular to a bonding direction while the inorganic light emitting element is being bonded to the anisotropic conductive layer.
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