公开(公告)号：US20240038711A1

公开(公告)日：2024-02-01

申请号：US18359976

申请日：2023-07-27

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.

发明人： TERUAKI KUMAZAWA ,  MASASHI UECHA ,  YUJI NAGUMO ,  MASARU OKUDA ,  MASATAKE NAGAYA ,  MITSURU KITAICHI ,  AKIRA MORI ,  NAOYA KIYAMA ,  MASAKAZU TAKEDA

IPC分类号： H01L23/00

CPC分类号： H01L24/29 ,  H01L24/27 ,  H01L2224/29083 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29144 ,  H01L2224/29019 ,  H01L2224/2784

摘要： A semiconductor device includes a semiconductor substrate and a metal layer disposed on a surface of the semiconductor substrate. The metal layer includes a first metal layer and a second metal layer. The second metal layer covers a surface of the first metal layer and has a higher solder wettability than the first metal layer. The second metal layer is exposed on a main surface of the metal layer. The first metal layer is exposed on a side surface of the metal layer. The metal layer has a protruding portion on the main surface. The protruding portion extends to make one round along an outer peripheral edge of the main surface.

公开(公告)号：US20240038590A1

公开(公告)日：2024-02-01

申请号：US18360322

申请日：2023-07-27

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.

发明人： MASASHI UECHA ,  YUJI NAGUMO ,  MASARU OKUDA ,  MASATAKE NAGAYA ,  MITSURU KITAICHI ,  AKIRA MORI ,  NAOYA KIYAMA ,  MASAKAZU TAKEDA

IPC分类号： H01L21/78 ,  H01L21/304

CPC分类号： H01L21/78 ,  H01L21/304

摘要： A semiconductor device includes a semiconductor substrate having a quadrangular shape when viewed from above and having a front surface, a rear surface opposite to the front surface, and four side surfaces connecting the front surface and the rear surface. Each of the side surfaces has a step section in which a plurality of protruding portions and a plurality of recessed portions alternately and repeatedly appear along a direction in which a peripheral edge of the front surface of the semiconductor substrate extends.

公开(公告)号：US20240030056A1

公开(公告)日：2024-01-25

申请号：US18324277

申请日：2023-05-26

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.

发明人： MASASHI UECHA ,  YUJI NAGUMO ,  MASARU OKUDA ,  MASATAKE NAGAYA ,  MITSURU KITAICHI ,  AKIRA MORI ,  NAOYA KIYAMA ,  MASAKAZU TAKEDA

IPC分类号： H01L21/683 ,  H01L21/304 ,  H01L21/78

CPC分类号： H01L21/6836 ,  H01L21/3043 ,  H01L21/78 ,  H01L2221/68327

摘要： A manufacturing method of a semiconductor device includes preparing a semiconductor substrate having a plurality of element regions and having a first surface and a second surface opposite to each other, forming a crack extending in a thickness direction of the semiconductor substrate along a boundary between the plurality of element regions by pressing a pressing member against the first surface of the semiconductor substrate along the boundary, forming a metal film over the plurality of element regions on the first surface of the semiconductor substrate after the forming of the crack, and dividing the semiconductor substrate and the metal film along the boundary by pressing a dividing member against the semiconductor substrate along the boundary from a direction facing the second surface of the semiconductor substrate after the forming of the metal film.

公开(公告)号：US20230154987A1

公开(公告)日：2023-05-18

申请号：US17981049

申请日：2022-11-04

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

发明人： HIROKI TSUMA ,  YUJI NAGUMO ,  MASASHI UECHA ,  TERUAKI KUMAZAWA

IPC分类号： H01L29/16 ,  H01L29/04 ,  H01L21/02

CPC分类号： H01L29/1608 ,  H01L29/04 ,  H01L21/02008 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02598

摘要： A silicon carbide semiconductor device includes a silicon carbide semiconductor layer and a side silicide layer. The silicon carbide semiconductor layer includes a silicon carbide single crystal and has a main surface, a rear surface opposite to the main surface, and a side surface connecting the main surface and the rear surface and formed by a cleavage plane. The silicon carbide semiconductor layer further includes a modified layer. The modified layer forms a part of the side surface located close to the rear surface and has an atomic arrangement structure of silicon carbide different from an atomic arrangement structure of the silicon carbide single crystal. The side silicide layer includes a metal silicide that is a compound of a metal element and silicon. The side silicide layer is disposed on the side surface of the silicon carbide semiconductor layer and is adjacent to the modified layer.

公开(公告)号：US20230268230A1

公开(公告)日：2023-08-24

申请号：US18158612

申请日：2023-01-24

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

发明人： FUMIHITO TACHIBANA ,  MASASHI UECHA ,  YUJI NAGUMO

IPC分类号： H01L21/784 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/56 ,  H01L21/02

CPC分类号： H01L21/784 ,  H01L21/02164 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/56

摘要： In a manufacturing method of a semiconductor device, a wafer in which multiple semiconductor elements is formed and having a first surface and a second surface opposite to each other is prepared, and a groove is formed on the first surface of the wafer along a boundary between adjacent semiconductor elements in the multiple semiconductor elements. The wafer is attached to a support plate in such a manner that the first surface of the wafer faces the support plate, and a scribing blade is pressed against the second surface of the wafer along the boundary to form a vertical crack inside the wafer along the boundary. Then, a breaking blade is pressed against the wafer along the boundary to cleave the wafer along the boundary.

公开(公告)号：US20230197519A1

公开(公告)日：2023-06-22

申请号：US18065082

申请日：2022-12-13

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

发明人： YUJI NAGUMO ,  MASASHI UECHA ,  HIROKI TSUMA ,  TERUAKI KUMAZAWA

IPC分类号： H01L21/78 ,  H01L21/04

CPC分类号： H01L21/78 ,  H01L21/0485 ,  H01L21/0475 ,  H01L21/6836

摘要： In a manufacturing method of a semiconductor device, a semiconductor wafer that is made of a semiconductor material harder than silicon and has a first surface and a second surface opposite to each other is prepared, a roughened layer is formed by grinding the second surface of the semiconductor wafer, a blade is pressed against the roughened layer to form a vertical crack in a surface layer of the semiconductor wafer, the roughened layer is removed after the vertical crack is formed, a rear surface electrode is formed on a rear surface of the semiconductor wafer on which the vertical crack is formed, and after the rear surface electrode is formed, the first surface of the semiconductor wafer is pressed and the semiconductor wafer is cleaved into multiple pieces with the vertical crack as a starting point.