公开(公告)号：US12202173B2

公开(公告)日：2025-01-21

申请号：US18045858

申请日：2022-10-12

Applicant: DISCO CORPORATION

Inventor： Hayato Iga

IPC: H01L21/322 ,  B28D5/00

Abstract: After peel-off layers have been formed in a workpiece of monocrystalline silicon such as an ingot, a bare wafer, or a device wafer with use of a laser beam having a wavelength transmittable through monocrystalline silicon, a substrate is separated from the workpiece along the peel-off layers acting as separation initiating points. The process results in increased productivity for the manufacture of substrates, compared with a process of manufacturing substrates from a workpiece with use of a wire saw.

公开(公告)号：US12214526B2

公开(公告)日：2025-02-04

申请号：US18046198

申请日：2022-10-13

Applicant: DISCO CORPORATION

Inventor： Hayato Iga

IPC: B28D5/00 ,  B23K26/38

Abstract: A peel-off layer is finally formed in an area, i.e., a first inner area or a second inner area, in a workpiece that is closer to the center of the workpiece among a plurality of areas. The workpiece has a cylindrical shape, so that the second inner area is wider than the other areas, e.g., the second outer area, in which the peel-off layers are formed. Consequently, when the peel-off layer is finally formed in the second inner area, the internal stresses in the workpiece are dispersed in a wider range than when the peel-off layer is finally formed in the second outer area. Thus, large cracks thicknesswise of the workpiece are prevented from being developed from modified regions contained in the peel-off layer. Therefore, the amount of workpiece material to be disposed of in subsequent steps is reduced, resulting in increased manufacturing productivity.

公开(公告)号：US12129570B2

公开(公告)日：2024-10-29

申请号：US17819666

申请日：2022-08-15

Applicant: DISCO CORPORATION

Inventor： Hayato Iga ,  Shin Tabata ,  Kazuya Hirata

IPC: C30B33/06 ,  C30B29/06 ,  C30B29/64 ,  C30B30/00

CPC classification number: C30B29/06 ,  C30B29/64 ,  C30B30/00 ,  C30B33/06

Abstract: After separation layers are formed inside a single-crystal silicon ingot, a single-crystal silicon substrate is split off from the single-crystal silicon ingot with use of these separation layers as the point of origin. This can improve the productivity of the single-crystal silicon substrate compared with the case of manufacturing the single-crystal silicon substrate from the single-crystal silicon ingot by a wire saw.