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公开(公告)号：US09530929B2
公开(公告)日：2016-12-27
申请号：US14606488
申请日：2015-01-27
Applicant: DISCO CORPORATION
Inventor： Hiroshi Morikazu , Tasuku Koyanagi , Shin Tabata
CPC classification number: H01L33/0079 , G01N21/88 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01S5/0216 , H01S5/0217 , H01S5/3013
Abstract: A lift-off method transfers an optical device layer in an optical device wafer to a transfer substrate. The optical device layer is formed on the front side of an epitaxy substrate through a buffer layer. A composite substrate is formed by bonding the transfer substrate through a bonding agent to the front side of the optical device layer, thereby forming a composite substrate. The buffer layer is broken up by applying a laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer from the back side of the epitaxy substrate to the buffer layer after performing the composite substrate forming step, thereby breaking the buffer layer. An optical device layer is transferred by peeling off the epitaxy substrate from the optical device layer after performing the buffer layer breaking step, thereby transferring the optical device layer to the transfer substrate.
Abstract translation: 剥离方法将光学器件晶片中的光学器件层传送到转印衬底。 光学器件层通过缓冲层形成在外延衬底的前侧。 复合基板通过将转印基板通过粘合剂粘合到光学器件层的前侧而形成复合基板。 通过在进行复合衬底形成步骤之后，通过施加具有对外延衬底的波长透射并从外延衬底的背面吸收到缓冲层的缓冲层的激光束来破坏缓冲层，从而破坏缓冲层 。 在执行缓冲层破坏步骤之后，通过从光学器件层剥离外延衬底来转移光学器件层，从而将光学器件层转移到转移衬底。
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2.发明申请公开(公告)号：US20190088816A1
公开(公告)日：2019-03-21
申请号：US16135679
申请日：2018-09-19
Applicant: DISCO CORPORATION , OSAKA UNIVERSITY
Inventor： Yusuke Mori , Masashi Yoshimura , Mamoru Imade , Masayuki Imanishi , Hiroshi Morikazu , Shin Tabata , Takumi Shotokuji
Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.
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公开(公告)号：US20150221818A1
公开(公告)日：2015-08-06
申请号：US14606488
申请日：2015-01-27
Applicant: DISCO CORPORATION
Inventor： Hiroshi Morikazu , Tasuku Koyanagi , Shin Tabata
CPC classification number: H01L33/0079 , G01N21/88 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01S5/0216 , H01S5/0217 , H01S5/3013
Abstract: A lift-off method transfers an optical device layer in an optical device wafer to a transfer substrate. The optical device layer is formed on the front side of an epitaxy substrate through a buffer layer. A composite substrate is formed by bonding the transfer substrate through a bonding agent to the front side of the optical device layer, thereby forming a composite substrate. The buffer layer is broken up by applying a laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer from the back side of the epitaxy substrate to the buffer layer after performing the composite substrate forming step, thereby breaking the buffer layer. An optical device layer is transferred by peeling off the epitaxy substrate from the optical device layer after performing the buffer layer breaking step, thereby transferring the optical device layer to the transfer substrate.
Abstract translation: 剥离方法将光学器件晶片中的光学器件层传送到转印衬底。 光学器件层通过缓冲层形成在外延衬底的前侧。 复合基板通过将转印基板通过粘合剂粘合到光学器件层的前侧而形成复合基板。 通过在进行复合衬底形成步骤之后，通过施加具有对外延衬底的波长透射并从外延衬底的背面吸收到缓冲层的缓冲层的激光束来破坏缓冲层，从而破坏缓冲层 。 在执行缓冲层破坏步骤之后，通过从光学器件层剥离外延衬底来转移光学器件层，从而将光学器件层转移到转移衬底。
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Patent Agency Ranking
4.发明授权公开(公告)号：US11618106B2
公开(公告)日：2023-04-04
申请号：US17065696
申请日：2020-10-08
Applicant: DISCO CORPORATION
Inventor： Kazuya Hirata , Shin Tabata
IPC: B23K26/53 , B23K26/0622 , B23K26/70 , B23K26/08 , B23K26/06 , B23K26/38 , B23K26/60 , H01L21/02 , B23K103/00 , B23K101/40
Abstract: A processing method for processing an SiC ingot includes a peel-off zone forming step of applying a processing pulsed laser beam having a wavelength transmittable through the ingot to the ingot while positioning a focused spot of the processing pulsed laser beam at a depth corresponding to a thickness of a wafer to be peeled off from the ingot, to form belt-shaped peel-off zones each including cracks in the ingot, a reflected beam detecting step of applying an inspecting laser beam having a wavelength transmittable through the ingot and reflectable from cracks of the peel-off zones and detecting an intensity of a beam reflected by the cracks, and a processing laser beam output power adjusting step of adjusting an output power of the processing pulsed laser beam to keep the intensity of the reflected beam detected in the reflected beam detecting step within a predetermined range.
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5.发明授权公开(公告)号：US10910511B2
公开(公告)日：2021-02-02
申请号：US16135679
申请日：2018-09-19
Applicant: DISCO CORPORATION , OSAKA UNIVERSITY
Inventor： Yusuke Mori , Masashi Yoshimura , Mamoru Imade , Masayuki Imanishi , Hiroshi Morikazu , Shin Tabata , Takumi Shotokuji
Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.
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公开(公告)号：US12129570B2
公开(公告)日：2024-10-29
申请号：US17819666
申请日：2022-08-15
Applicant: DISCO CORPORATION
Inventor： Hayato Iga , Shin Tabata , Kazuya Hirata
Abstract: After separation layers are formed inside a single-crystal silicon ingot, a single-crystal silicon substrate is split off from the single-crystal silicon ingot with use of these separation layers as the point of origin. This can improve the productivity of the single-crystal silicon substrate compared with the case of manufacturing the single-crystal silicon substrate from the single-crystal silicon ingot by a wire saw.
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公开(公告)号：US09511579B2
公开(公告)日：2016-12-06
申请号：US14591339
申请日：2015-01-07
Applicant: DISCO CORPORATION
Inventor： Hiroshi Morikazu , Tasuku Koyanagi , Shin Tabata
CPC classification number: B32B43/006 , B32B38/10 , B32B2457/14 , Y10T156/1137 , Y10T156/1184 , Y10T156/1906 , Y10T156/1939 , Y10T156/1961 , Y10T156/1967 , Y10T156/1972
Abstract: A separation apparatus for separating a composite substrate formed from a first substrate and a second substrate joined together includes an exfoliation unit for advancing into a boundary region between the first substrate and the second substrate of the composite substrate supported by a supporting face of a supporting base and a side face supporting unit to exfoliate the composite substrate into the first substrate and the second substrate. The exfoliation unit includes a wedge portion for advancing into the boundary region between the first substrate and the second substrate, an exfoliation member having a gas outlet open at a tip end of the wedge portion, and an exfoliation member advancing and retracting unit for advancing and retracting the wedge portion of the exfoliation member to and from the boundary region between the first substrate and the second substrate which configure the composite substrate.
Abstract translation: 用于分离由第一基板和第二基板形成的复合基板的分离装置包括：剥离单元，用于前进到由支撑基座的支撑面支撑的复合基板的第一基板和第二基板之间的边界区域 以及侧面支撑单元，用于将复合基板剥离成第一基板和第二基板。 剥离单元包括用于前进到第一基板和第二基板之间的边界区域的楔形部分，具有在楔形部分的尖端处开口的气体出口的剥离构件，以及用于推进的剥离构件前进和后退单元， 将剥离构件的楔形部分从构造复合衬底的第一衬底和第二衬底之间的边界区域缩回。
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公开(公告)号：US20150202857A1
公开(公告)日：2015-07-23
申请号：US14591339
申请日：2015-01-07
Applicant: DISCO CORPORATION
Inventor： Hiroshi Morikazu , Tasuku Koyanagi , Shin Tabata
IPC: B32B43/00
CPC classification number: B32B43/006 , B32B38/10 , B32B2457/14 , Y10T156/1137 , Y10T156/1184 , Y10T156/1906 , Y10T156/1939 , Y10T156/1961 , Y10T156/1967 , Y10T156/1972
Abstract: A separation apparatus for separating a composite substrate formed from a first substrate and a second substrate joined together includes an exfoliation unit for advancing into a boundary region between the first substrate and the second substrate of the composite substrate supported by a supporting face of a supporting base and a side face supporting unit to exfoliate the composite substrate into the first substrate and the second substrate. The exfoliation unit includes a wedge portion for advancing into the boundary region between the first substrate and the second substrate, an exfoliation member having a gas outlet open at a tip end of the wedge portion, and an exfoliation member advancing and retracting unit for advancing and retracting the wedge portion of the exfoliation member to and from the boundary region between the first substrate and the second substrate which configure the composite substrate.
Abstract translation: 用于分离由第一基板和第二基板形成的复合基板的分离装置包括：剥离单元，用于前进到由支撑基座的支撑面支撑的复合基板的第一基板和第二基板之间的边界区域 以及侧面支撑单元，用于将复合基板剥离成第一基板和第二基板。 剥离单元包括用于前进到第一基板和第二基板之间的边界区域的楔形部分，具有在楔形部分的尖端处开口的气体出口的剥离构件，以及用于推进的剥离构件前进和后退单元， 将剥离构件的楔形部分从构造复合衬底的第一衬底和第二衬底之间的边界区域缩回。
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