公开(公告)号：US10916460B2

公开(公告)日：2021-02-09

申请号：US16020414

申请日：2018-06-27

申请人： DISCO CORPORATION

发明人： Kentaro Iizuka ,  Naoki Omiya ,  Takashi Mori ,  Motomi Kitano ,  Kazuya Hirata ,  Hiroshi Kitamura

IPC分类号： H01L21/67 ,  B24B7/22 ,  H01L21/677 ,  B23K26/00 ,  H01L29/16 ,  H01L21/02

摘要： A wafer producing apparatus for producing an SiC wafer from a single-crystal SiC ingot includes an ingot grinding unit, a laser applying unit that applies a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot while positioning a focal point of the pulsed laser beam in the single-crystal SiC ingot at a depth corresponding to the thickness of the SiC wafer to be produced from an upper surface of the single-crystal SiC ingot, thereby forming a peel-off layer in the single-crystal SiC ingot, a wafer peeling unit that peels the SiC wafer off the peel-off layer in the single-crystal SiC ingot, and a delivery unit assembly that delivers the single-crystal SiC ingot between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.

公开(公告)号：US20190006212A1

公开(公告)日：2019-01-03

申请号：US16020414

申请日：2018-06-27

申请人： DISCO CORPORATION

发明人： Kentaro Iizuka ,  Naoki Omiya ,  Takashi Mori ,  Motomi Kitano ,  Kazuya Hirata ,  Hiroshi Kitamura

IPC分类号： H01L21/67 ,  B24B7/22 ,  H01L21/677

摘要： A wafer producing apparatus for producing an SiC wafer from a single-crystal SiC ingot includes an ingot grinding unit, a laser applying unit that applies a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot while positioning a focal point of the pulsed laser beam in the single-crystal SiC ingot at a depth corresponding to the thickness of the SiC wafer to be produced from an upper surface of the single-crystal SiC ingot, thereby forming a peel-off layer in the single-crystal SiC ingot, a wafer peeling unit that peels the SiC wafer off the peel-off layer in the single-crystal SiC ingot, and a delivery unit assembly that delivers the single-crystal SiC ingot between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.

公开(公告)号：US10981250B2

公开(公告)日：2021-04-20

申请号：US16000462

申请日：2018-06-05

申请人： DISCO CORPORATION

发明人： Kentaro Iizuka ,  Naoki Omiya ,  Takashi Mori ,  Satoshi Yamanaka ,  Kazuya Hirata

IPC分类号： B23K26/53 ,  H01L21/02 ,  B23K26/00 ,  H01L29/16 ,  B23K103/00

摘要： A SiC wafer is produced from a single crystal SiC ingot. Wafer producing apparatus includes a holding unit for holding the ingot, a flattening unit for grinding the upper surface of the ingot, thereby flattening the upper surface, a laser applying unit for setting the focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the upper surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced, and next applying the laser beam to the ingot to thereby form a separation layer for separating the wafer from the ingot, a wafer separating unit for holding the upper surface of the ingot to separate the wafer from the ingot along the separation layer, and a wafer storing unit for storing the wafer separated from the ingot.

公开(公告)号：US10910241B2

公开(公告)日：2021-02-02

申请号：US16209285

申请日：2018-12-04

申请人： DISCO CORPORATION

发明人： Kentaro Iizuka ,  Naoki Omiya

IPC分类号： B23K26/53 ,  B23K26/38 ,  B23K26/08 ,  H01L21/673 ,  H01L21/677 ,  H01L21/304 ,  B28D5/00 ,  B24B7/22 ,  H01L21/67 ,  B23K26/00 ,  B24B27/00 ,  B23K103/00

摘要： A wafer producing apparatus includes: an ingot grinding unit configured to grind and planarize an upper surface of an ingot held by a first holding table; a laser applying unit configured to apply a laser beam of such a wavelength as to be transmitted through the ingot to the ingot, with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be produced from an upper surface of the ingot held by a second holding table, to form a peel-off layer; a wafer peeling unit configured to hold the upper surface of the ingot held by a third holding table and peel off the wafer from the peel-off layer; and a carrying tray having an ingot support section configured to support the ingot and a wafer support section configured to support the wafer.

公开(公告)号：US20180354067A1

公开(公告)日：2018-12-13

申请号：US16000462

申请日：2018-06-05

申请人： DISCO CORPORATION

发明人： Kentaro Iizuka ,  Naoki Omiya ,  Takashi Mori ,  Satoshi Yamanaka ,  Kazuya Hirata

IPC分类号： B23K26/00

CPC分类号： B23K26/53 ,  B23K26/0006 ,  B23K2103/56 ,  H01L29/1608

摘要： A SiC wafer is produced from a single crystal SiC ingot. Wafer producing apparatus includes a holding unit for holding the ingot, a flattening unit for grinding the upper surface of the ingot, thereby flattening the upper surface, a laser applying unit for setting the focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the upper surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced, and next applying the laser beam to the ingot to thereby form a separation layer for separating the wafer from the ingot, a wafer separating unit for holding the upper surface of the ingot to separate the wafer from the ingot along the separation layer, and a wafer storing unit for storing the wafer separated from the ingot.