公开(公告)号：US20090283217A1

公开(公告)日：2009-11-19

申请号：US12121599

申请日：2008-05-15

申请人： DMITRY LUBOMIRSKY ,  Tien Fak Tan ,  Lun Tsuei

发明人： DMITRY LUBOMIRSKY ,  Tien Fak Tan ,  Lun Tsuei

IPC分类号： H01L21/3065

CPC分类号： H01L21/67126 ,  H01L21/6838 ,  Y10T279/23

摘要： A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.

摘要翻译： 提供半导体装置的晶片基座。 晶片基座能够支撑基板。 晶片基座包括具有至少一个净化开口的基座，该至少一个净化开口构造成流过净化气体;以及至少一个夹紧开口，其构造成将基板夹在基座上。 基座包括设置在至少一个吹扫开口和至少一个夹紧开口之间的密封带。 密封带构造成支撑基底。

公开(公告)号：US20090266299A1

公开(公告)日：2009-10-29

申请号：US12109187

申请日：2008-04-24

申请人： MUHAMMAD M. RASHEED ,  TERUKI IWASHITA ,  HIROSHI OTAKE ,  YUKI KOGA ,  KAZUTOSHI MAEHARA ,  XINGLONG CHEN ,  SUDHIR GONDHALEKAR ,  DMITRY LUBOMIRSKY

发明人： MUHAMMAD M. RASHEED ,  TERUKI IWASHITA ,  HIROSHI OTAKE ,  YUKI KOGA ,  KAZUTOSHI MAEHARA ,  XINGLONG CHEN ,  SUDHIR GONDHALEKAR ,  DMITRY LUBOMIRSKY

IPC分类号： C23C16/448

CPC分类号： C23C16/4585 ,  C23C16/4581 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/68735

摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in an radially outward direction from the inner edge toward the outer edge.

摘要翻译： 本文提供了半导体衬底处理室的衬底支撑件的工艺组件的实施例。 在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。 在一些实施例中，用于半导体处理腔室的处理套件包括具有内边缘和外边缘的环形体，并具有上表面和下表面，上表面以约5-65度的向下角度设置在 从内缘朝向外缘的径向向外方向。

公开(公告)号：US20090277388A1

公开(公告)日：2009-11-12

申请号：US12255829

申请日：2008-10-22

申请人： DMITRY LUBOMIRSKY

发明人： DMITRY LUBOMIRSKY

IPC分类号： C23C16/54

CPC分类号： C23C16/46 ,  C23C16/4581 ,  C23C16/4586

摘要： Embodiments of the present invention generally include an apparatus for uniform heat distribution across the surface of a substrate during processing. The apparatus includes a substrate heater with a heated substrate support surface that is removable attached to a heater shaft via a fastening mechanism. The interface between the heated substrate support and the heater shaft may include a soft metal gasket and a vacuum or purge channel disposed therein. The substrate support surface may include regions for independently varying the back pressure of a substrate disposed thereon.

摘要翻译： 本发明的实施例通常包括在处理期间在衬底的表面均匀分布的装置。 该装置包括具有被加热的基板支撑表面的基板加热器，该基板加热器可通过紧固机构可移除地附接到加热器轴。 加热的衬底支撑件和加热器轴之间的界面可以包括软金属衬垫和设置在其中的真空或净化通道。 衬底支撑表面可以包括用于独立地改变其上设置的衬底的背压的区域。