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    Apparatus for etching semiconductor wafers
    2.
    发明授权
    Apparatus for etching semiconductor wafers 有权
    用于蚀刻半导体晶片的设备

    公开(公告)号：US08333842B2

    公开(公告)日：2012-12-18

    申请号：US12121599

    申请日：2008-05-15

    申请人： Dmitry Lubomirsky ,  Tien Fak Tan ,  Lun Tsuei

    发明人： Dmitry Lubomirsky ,  Tien Fak Tan ,  Lun Tsuei

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/67126 ,  H01L21/6838 ,  Y10T279/23

    摘要： A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.

    摘要翻译： 提供半导体装置的晶片基座。 晶片基座能够支撑基板。 晶片基座包括具有至少一个净化开口的基座，该至少一个净化开口构造成流过净化气体;以及至少一个夹紧开口，其构造成将衬底夹在基座上。 基座包括设置在至少一个吹扫开口和至少一个夹紧开口之间的密封带。 密封带构造成支撑基底。

    APPARATUS FOR ETCHING SEMICONDUCTOR WAFERS
    3.
    发明申请
    APPARATUS FOR ETCHING SEMICONDUCTOR WAFERS 有权
    用于蚀刻半导体波长的装置

    公开(公告)号：US20090283217A1

    公开(公告)日：2009-11-19

    申请号：US12121599

    申请日：2008-05-15

    申请人： DMITRY LUBOMIRSKY ,  Tien Fak Tan ,  Lun Tsuei

    发明人： DMITRY LUBOMIRSKY ,  Tien Fak Tan ,  Lun Tsuei

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/67126 ,  H01L21/6838 ,  Y10T279/23

    摘要： A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.

    摘要翻译： 提供半导体装置的晶片基座。 晶片基座能够支撑基板。 晶片基座包括具有至少一个净化开口的基座，该至少一个净化开口构造成流过净化气体;以及至少一个夹紧开口，其构造成将基板夹在基座上。 基座包括设置在至少一个吹扫开口和至少一个夹紧开口之间的密封带。 密封带构造成支撑基底。

    COUNTER-BALANCED SUBSTRATE SUPPORT
    4.
    发明申请
    COUNTER-BALANCED SUBSTRATE SUPPORT 审中-公开
    计数平衡基板支持

    公开(公告)号：US20090120584A1

    公开(公告)日：2009-05-14

    申请号：US12059820

    申请日：2008-03-31

    申请人： Dmitry Lubomirsky ,  Toan Q. Tran ,  Lun Tsuei ,  Manuel A. Hernandez ,  Kirby H. Floyd ,  Ellie Y. Yieh

    发明人： Dmitry Lubomirsky ,  Toan Q. Tran ,  Lun Tsuei ,  Manuel A. Hernandez ,  Kirby H. Floyd ,  Ellie Y. Yieh

    IPC分类号： C23F1/08 ,  B05C13/00 ,  B05C15/00 ,  H01L21/677 ,  B05C21/00

    CPC分类号： H01L21/6719 ,  H01L21/67017 ,  H01L21/68742 ,  H01L21/68792

    摘要： A semiconductor processing system is described. The system includes a processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure. The system also includes a pumping system coupled to the chamber and adapted to remove material from the processing chamber. The system further includes a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the processing chamber is provided which is rigidly and sometimes rotatably coupled to the substrate support shaft. A motor coupled to the bracket can be actuated to vertically translate the substrate support pedestal, shaft and bracket from a first position to a second position closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force, where the tilting force is generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support. The counter-balancing force reduces the deflection of the bracket and the substrate support.

    摘要翻译： 描述半导体处理系统。 该系统包括具有能够将内部室压力保持在环境大气压力以下的内部的处理室。 该系统还包括耦合到腔室并适于从处理室移除材料的泵送系统。 该系统还包括基板支撑基座，其中基板支撑基座刚性地联接到延伸穿过处理室的壁的基板支撑轴。 提供位于处理室外部的支架，其刚性且有时可旋转地联接到基板支撑轴。 耦合到支架的马达可以被致动以将基板支撑基座，轴和托架从第一位置垂直平移到靠近处理板的第二位置。 安装在支架的端部上的活塞提供与倾斜力的反平衡力，其中倾斜力由内部室压力的变化产生，并且引起支架和基板支撑件的位置的偏转。 反平衡力减小了支架和基板支架的挠曲。

    APPARATUS AND METHOD FOR PREVENTING PROCESS SYSTEM CONTAMINATION
    5.
    发明申请
    APPARATUS AND METHOD FOR PREVENTING PROCESS SYSTEM CONTAMINATION 审中-公开
    防止过程系统污染的装置和方法

    公开(公告)号：US20100151127A1

    公开(公告)日：2010-06-17

    申请号：US12628034

    申请日：2009-11-30

    申请人： Tom K. Cho ,  Lun Tsuei ,  Kuan-Yuan Peng ,  Kyle S. Reinke ,  Brian Sy-Yuan Shieh

    发明人： Tom K. Cho ,  Lun Tsuei ,  Kuan-Yuan Peng ,  Kyle S. Reinke ,  Brian Sy-Yuan Shieh

    IPC分类号： C23C16/52 ,  C23C16/00

    CPC分类号： C23C16/4401 ,  H01L21/67259 ,  H01L21/67288 ,  H01L21/68742

    摘要： Embodiments of the present invention generally provide apparatus and methods for preventing contamination within a processing system due to substrate breakage. In one embodiment, an acoustic detection mechanism is disposed on or within a process chamber to monitor conditions within the process chamber. In one embodiment, the acoustic detection mechanism detects conditions indicative of substrate breakage within the process chamber. In one embodiment, the acoustic detection mechanism detects conditions that are known to lead to substrate breakage within the process chamber. In one embodiment, the acoustic detection mechanism is combined with an optical detection mechanism. By early detection of substrate breakage or conditions known to lead to substrate breakage, the process chamber may be taken off line and repaired prior to contamination of the entire process system.

    摘要翻译： 本发明的实施方案通常提供用于防止由于基底破裂而导致处理系统内的污染的装置和方法。 在一个实施例中，声学检测机构设置在处理室内或内部，以监测处理室内的状况。 在一个实施例中，声学检测机构检测指示处理室内的衬底断裂的条件。 在一个实施例中，声学检测机构检测已知导致处理室内的基板破裂的状况。 在一个实施例中，声学检测机构与光学检测机构组合。 通过早期检测到底物断裂或已知导致基底破裂的条件，处理室可以在整个过程系统被污染之前脱机并修复。

    Mixing energized and non-energized gases for silicon nitride deposition
    6.
    发明申请
    Mixing energized and non-energized gases for silicon nitride deposition 审中-公开
    混合通电和无能气体用于氮化硅沉积

    公开(公告)号：US20060162661A1

    公开(公告)日：2006-07-27

    申请号：US11040712

    申请日：2005-01-22

    申请人： Kee Jung ,  Dale Du Bois ,  Lun Tsuei ,  Lihua Huang ,  Martin Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Kwan

    发明人： Kee Jung ,  Dale Du Bois ,  Lun Tsuei ,  Lihua Huang ,  Martin Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Kwan

    IPC分类号： H05H1/24 ,  C23C16/00 ,  H01L21/306 ,  C23F1/00 ,  B08B6/00

    CPC分类号： C23C16/45574 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/3185

    摘要： A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.

    摘要翻译： 双通道气体分配器可以将第一工艺气体和非等离子体第二工艺气体的等离子体种类同时分配到衬底处理室的工艺区域中。 气体分配器具有局部等离子体盒，其具有第一入口以接收第一工艺气体，以及相对的顶板和底板，其能够相对于彼此电偏置以限定局部等离子体区，其中第一工艺的等离子体 可以形成气体。 顶板具有多个间隔开的气体扩散孔，以将第一处理气体扩散通过局部等离子体区域，并且底板具有多个第一出口，用于将第一处理气体的等离子体的等离子体物质分配到处理区 。 等离子体隔离气体进料具有用于接收第二处理气体的第二入口和多个第二出口以将第二处理气体通入处理区。 等离子体隔离器位于第二入口和第二出口之间，以防止在等离子体隔离气体进料中形成第二工艺气体的等离子体。

    Mixing Energized and Non-Energized Gases for Silicon Nitride Deposition
    9.
    发明申请
    Mixing Energized and Non-Energized Gases for Silicon Nitride Deposition 审中-公开
    用于氮化硅沉积的混合通电和非能量气体

    公开(公告)号：US20120009803A1

    公开(公告)日：2012-01-12

    申请号：US13212153

    申请日：2011-08-17

    申请人： Kee Bum Jung ,  Dale R. Du Bois ,  Lun Tsuei ,  Lihua Li Huang ,  Martin Jay Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Chiu Kwan

    发明人： Kee Bum Jung ,  Dale R. Du Bois ,  Lun Tsuei ,  Lihua Li Huang ,  Martin Jay Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Chiu Kwan

    IPC分类号： H01L21/318

    CPC分类号： C23C16/45574 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/3185

    摘要： A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.

    摘要翻译： 双通道气体分配器可以将第一工艺气体和非等离子体第二工艺气体的等离子体种类同时分配到衬底处理室的工艺区域中。 气体分配器具有局部等离子体箱，其具有第一入口以接收第一处理气体，以及相对的顶板和底板，其能够相对于彼此电偏置以限定局部等离子体区，其中第一工艺的等离子体 可以形成气体。 顶板具有多个间隔开的气体扩散孔，以将第一处理气体扩散通过局部等离子体区域，并且底板具有多个第一出口，用于将第一处理气体的等离子体的等离子体物质分配到处理区 。 等离子体隔离气体进料具有用于接收第二处理气体的第二入口和多个第二出口以将第二处理气体通入处理区。 等离子体隔离器位于第二入口和第二出口之间，以防止在等离子体隔离气体进料中形成第二工艺气体的等离子体。

    ADJUSTABLE GAS DISTRIBUTION APPARATUS
    10.
    发明申请
    ADJUSTABLE GAS DISTRIBUTION APPARATUS 审中-公开
    可调节气体分配装置

    公开(公告)号：US20100112212A1

    公开(公告)日：2010-05-06

    申请号：US12604591

    申请日：2009-10-23

    申请人： Lin Zhang ,  Lun Tsuei ,  Alan Tso ,  Tom K. Cho ,  Brian Sy-Yuan Shieh

    发明人： Lin Zhang ,  Lun Tsuei ,  Alan Tso ,  Tom K. Cho ,  Brian Sy-Yuan Shieh

    IPC分类号： C23C16/455 ,  C23C16/54

    CPC分类号： H01J37/32935 ,  C23C16/45565 ,  C23C16/45589 ,  H01J37/3244

    摘要： Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber.

    摘要翻译： 本发明的实施例通常提供用于改变处理室内的气体分配板的轮廓而不破坏室内的真空条件的装置和方法。 在一个实施例中，中央支撑装置被调节以改变气体分配板的中心区域相对于气体分配板的周边的高度。 在另一个实施例中，调节多个中心支撑装置以相对于板的周边改变气体分配板的中心区域的高度。 在另一个实施例中，调节多个中央支撑装置和多个中距离支撑装置以改变气体分配板的某些区域相对于气体分配板的其它区域的高度。 在一个实施例中，基于在处理室内检测到的变化来改变气体分配板的轮廓。