公开(公告)号：US20130334495A1

公开(公告)日：2013-12-19

申请号：US13837992

申请日：2013-03-15

申请人： Dae-ho LIM ,  Joo-sung KIM ,  Jae-kyun KIM ,  Young-jo TAK

发明人： Dae-ho LIM ,  Joo-sung KIM ,  Jae-kyun KIM ,  Young-jo TAK

IPC分类号： H01L29/12 ,  H01L21/02

CPC分类号： H01L29/122 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/2003

摘要： A superlattice structure, and a semiconductor device including the same, include a plurality of pairs of layers are in a pattern repeated at least two times, in which a first layer and a second layer constitute a pair, the first layer is formed of AlxInyGa1-x-yN (where 0≦x and y≦1), the second layer is formed of AlaInbGa1-a-bN (where 0≦a, b≦1 and x≠a), the first and second layers have the same thickness, and a total thickness of each of the plurality of pairs of layers is different than each other.

摘要翻译： 超晶格结构以及包括该超晶格结构的半导体器件包括多层重叠至少两次的图案，其中第一层和第二层构成一对，第一层由Al x In y Ga 1- x-yN（其中0 @ x和y @ 1），第二层由AlaInbGa1-a-bN（其中0 @ a，b @ 1和x