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公开(公告)号：US07176781B2
公开(公告)日：2007-02-13
申请号：US10953478
申请日：2004-09-29
申请人： Daniel Charles Kerr , Roger W. Key , Bradley J. Albers , William A. Russell , Alan Sangone Chen
发明人： Daniel Charles Kerr , Roger W. Key , Bradley J. Albers , William A. Russell , Alan Sangone Chen
IPC分类号： H01C1/012
CPC分类号： H01L23/5228 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： A resistor formed on a material layer of a semiconductor integrated circuit and a method for forming the resistor. The resistor comprises a region of resistive material with a plurality of conductive contacts or plugs in electrical contact with and extending away from the resistive material. A first and a second interconnect line are formed overlying the plugs and in conductive contact with one or more of the plurality of plugs, such that a portion of the resistive material between the first and the second interconnect lines provides a desired resistance. According to a method of the present invention, the plurality of conductive contacts are formed using a first photolithographic mask and the first and the second interconnect lines are formed using a second photolithographic mask. The desired resistance is changed by modifying the first or the second mask such that one or more dimensions of a region of the resistive material between the first and the second interconnect lines is altered.
摘要翻译： 形成在半导体集成电路的材料层上的电阻器和形成该电阻器的方法。 电阻器包括电阻材料的区域，其具有与电阻材料电接触并远离电阻材料的多个导电触点或插塞。 第一和第二互连线形成在插头上方并与多个插头中的一个或多个导电接触，使得第一和第二互连线之间的电阻材料的一部分提供期望的电阻。 根据本发明的方法，使用第一光刻掩模形成多个导电触点，并且使用第二光刻掩模形成第一和第二布线。 通过修改第一或第二掩模来改变期望的电阻，使得在第一和第二互连线之间的电阻材料的区域的一个或多个维度被改变。
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2.发明授权公开(公告)号：US07449388B2
公开(公告)日：2008-11-11
申请号：US11458270
申请日：2006-07-18
IPC分类号： H01L21/331
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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3.发明授权公开(公告)号：US07910425B2
公开(公告)日：2011-03-22
申请号：US12727304
申请日：2010-03-19
IPC分类号： H01L21/8249
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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4.发明授权公开(公告)号：US07713811B2
公开(公告)日：2010-05-11
申请号：US12243137
申请日：2008-10-01
IPC分类号： H01L21/8249
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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5.发明授权公开(公告)号：US08143120B2
公开(公告)日：2012-03-27
申请号：US13026528
申请日：2011-02-14
IPC分类号： H01L21/8249
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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6.发明申请公开(公告)号：US20110133289A1
公开(公告)日：2011-06-09
申请号：US13026528
申请日：2011-02-14
IPC分类号： H01L21/8249 , H01L27/06
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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7.发明申请公开(公告)号：US20090029510A1
公开(公告)日：2009-01-29
申请号：US12243137
申请日：2008-10-01
IPC分类号： H01L21/8249
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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8.发明申请公开(公告)号：US20100173459A1
公开(公告)日：2010-07-08
申请号：US12727304
申请日：2010-03-19
IPC分类号： H01L21/8249
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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9.发明授权公开(公告)号：US07095094B2
公开(公告)日：2006-08-22
申请号：US10953894
申请日：2004-09-29
IPC分类号： H01L27/102
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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