摘要:
Magnetic tape (13) on a supply reel (11) is provided with a trailing end leader (27) which has an abrasive cleaning characteristic. In order to effectively use the leader with the cleaning characteristic, the tape is fully unreeled to expose the abrasive leader (27) only when a requirement to clean the tape head transducers is sensed. During normal operation, the trailing leader (25) which includes the cleaning leader (27) is not exposed to the tape transducer head, but instead remains on the supply reel.
摘要:
A method is provided for cleaning a transducer head in a tape drive. The method includes the steps of: providing a tape drive with a head cleaning device, a data tape cartridge having data tape, and a cleaning tape cartridge having cleaning tape; detecting error rate for the transducer head with the data tape; determining when the detected error rate exceeds a specified level; and when the detected error rate exceeds a specified level, loading the cleaning tape cartridge into the tape drive and running cleaning media on the cleaning tape over the transducer head to clean the transducer head. Another method includes using a head cleaning device to clean the transducer head when there is an identified need, or as a preventative measure.
摘要:
A magnetic recording disk has a layered structure comprising a metal substrate, a layer of NiP atop the metal substrate, the NiP layer having a surface roughness of less than 2.0 nanometers RMS, a metal layer over the polished NiP layer, the metal layer having a desired textured outer surface as a result of the sputter deposition, the textured outer surface being characterized by a cobblestone-like metallic grain structure with between 10 and 100 grains per square micron, an RMS surface roughness of between 1.0 and 8.0 nanometers, and with peak heights as measured from the mean plane of the surface over a 10 micron square area of between 2.0 and 20.0 nanometers, a magnetic layer atop the metal layer.
摘要:
A memory cell includes a magnetic data storage layer, a magnetic reference layer, and an insulating layer between the data storage layer and the reference layer. A resistive layer having a known electrical resistance is positioned adjacent the insulating layer.
摘要:
A read-only memory device is described having non-volatile memory cells that include a memory component connected between electrically conductive traces. A memory component is formed to include a resistor that indicates a resistance value when a potential is applied to a selected memory cell. The resistance value of a memory component in an individual memory cell corresponds to multiple logical bits. The resistance value of a memory component corresponding to a set of logical bits can be based on a thickness and/or an area of electrically resistive material that forms the memory component, and/or based on the geometric shape of the memory component, where different geometric shapes of the electrically resistive material have different resistance values that correspond to different sets of logical bits.
摘要:
An inexpensive, vertically oriented multiple substrate carrier is disclosed for high-temperature, high vacuum film deposition systems. In one embodiment, the substrates have central circular openings and the carrier includes a plurality of supports on which the substrates hang, with each support, such as a vertically oriented sheave, engaging the perimeter of a substrate opening. As the carrier is rotated, planetary motion is imparted to the substrates to facilitate simultaneous, two-sided, substantially uniform deposition of a film. In another embodiment, the substrates are circular and are each supported for planetary motion and two sided deposition in a respective circular groove which bounds an opening through the carrier.
摘要:
Methods for creating a memory device can include depositing a sense layer, patterning the sense layer to form a plurality of magnetic data cells, depositing a separation layer over the plurality of data cells, depositing a reference layer over the separation layer, and patterning the reference layer to form an elongated magnetic reference cell wherein the elongated magnetic reference cell extends uninterrupted along more than one of the plurality of magnetic data cells.
摘要:
A magnetic memory includes a circuit configured to apply a reverse magnetic field to one or more half-selected magnetic memory cells to improve half-select margin in the magnetic memory.
摘要:
A sealed substrate processing path has plural selectably isolatable vacuum deposition chambers along the path. A transporter carries substrates along the path and an independently controllable sputter deposition is performed in each deposition chamber on substrates therein. Substrates are loaded from a load chamber to a first deposition chamber while a vacuum is maintained in the first and load chambers. Substrates are transferred from a last deposition chamber to an unload chamber while a vacuum is maintained in the last and load chambers. Substrates are placed in the load chamber while the load and first chambers are isolated and are removed from the unload chamber while the last and unload chambers are isolated. In one embodiment, substrates travel succesively from the load chamber to first through fourth deposition chambers and then to the unload chamber. In another embodiment, substrates travel from the load chamber to first to second to first and to third deposition chambers and then to the unload chamber. First and second alternating load chambers are provided in another embodiment with substrates being loaded into the second load chamber while substrates are transferred from the first load chamber to the first deposition chamber and vice versa. The respective first and second load chambers are coupled through an interface chamber to the first deposition chamber and are each isolatable from the interface chamber during loading.
摘要:
Methods for creating a memory device can include depositing a sense layer, patterning the sense layer to form a plurality of magnetic data cells, depositing a separation layer over the plurality of data cells, depositing a reference layer over the separation layer, and patterning the reference layer to form an elongated magnetic reference cell wherein the elongated magnetic reference cell extends uninterrupted along more than one of the plurality of magnetic data cells.