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公开(公告)号：US20080180862A1
公开(公告)日：2008-07-31
申请号：US12058147
申请日：2008-03-28
申请人： David D. DJAYAPRAWIRA , Koji TSUNEKAWA , Motonobu NAGAI , Hiroki MAEHARA , Shinji YAMAGATA , Naoki WATANABE , Shinji YUASA
发明人： David D. DJAYAPRAWIRA , Koji TSUNEKAWA , Motonobu NAGAI , Hiroki MAEHARA , Shinji YAMAGATA , Naoki WATANABE , Shinji YUASA
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.
摘要翻译： 一种磁电阻效应器件，包括具有一对铁磁层和位于它们之间的阻挡层的多层结构，其中至少一个铁磁层至少具有与阻挡层接触的部分为非晶形，阻挡层是具有高度磁化强度的MgO层 定向纹理结构。
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公开(公告)号：US20100055502A1
公开(公告)日：2010-03-04
申请号：US12547978
申请日：2009-08-26
申请人： Hitoshi KUBOTA , Akio FUKUSHIMA , Kei YAKUSHIJI , Shinji YUASA , Koji ANDO , Satoshi YAKATA
发明人： Hitoshi KUBOTA , Akio FUKUSHIMA , Kei YAKUSHIJI , Shinji YUASA , Koji ANDO , Satoshi YAKATA
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A tunneling magnetoresistive device includes: a fixed layer that includes a ferromagnetic material; a tunneling insulating film that is provided in contact with the fixed layer; and a free layer that includes a first ferromagnetic film provided in contact with the tunneling insulating film, a second ferromagnetic film whose magnetization is coupled parallel to the magnetization of the first ferromagnetic film, and a conductive film interposed between the first ferromagnetic film and the second ferromagnetic film.
摘要翻译： 隧道磁阻器件包括：固定层，其包括铁磁材料; 设置成与固定层接触的隧道绝缘膜; 以及自由层，其包括与所述隧道绝缘膜接触而设置的第一铁磁性膜，其磁化平行于所述第一铁磁膜的磁化的第二铁磁性膜，以及介于所述第一铁磁性膜与所述第二铁磁膜之间的导电性膜 铁磁膜。
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