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1.发明授权Measuring bias temperature instability induced ring oscillator frequency degradation 失效测量偏置温度不稳定引起的环形振荡器频率降低公开(公告)号：US08587383B2
公开(公告)日：2013-11-19
申请号：US13313416
申请日：2011-12-07
IPC分类号： G01R23/00 , G01R31/3187 , H03K3/03
CPC分类号： G01R31/2824 , H03K3/0315
摘要： A method establishes an initial voltage in a ring oscillator and a logic circuit of an integrated circuit device. Following this, the method enables the operating state of the ring oscillator. After enabling the operating state of the ring oscillator, the method steps up to a stressing voltage in the ring oscillator. The initial voltage is approximately one-half the stressing voltage. The stressing voltage creates operating-level stress within the ring oscillator. The method measures the operating-level frequency within the ring oscillator using an oscilloscope (after stepping up to the stressing voltage).
摘要翻译： 一种方法在环形振荡器和集成电路器件的逻辑电路中建立初始电压。 此后，该方法启用环形振荡器的工作状态。 在启用环形振荡器的工作状态之后，该方法在环形振荡器中达到应力电压。 初始电压约为应力电压的一半。 应力电压在环形振荡器内产生工作电平应力。 该方法使用示波器测量环形振荡器内的工作电平频率（升压到应力电压之后）。
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2.发明申请MEASURING BIAS TEMPERATURE INSTABILITY INDUCED RING OSCILLATOR FREQUENCY DEGRADATION 失效测量偏温度不稳定性感应振荡器频率降低公开(公告)号：US20130147562A1
公开(公告)日：2013-06-13
申请号：US13313416
申请日：2011-12-07
IPC分类号： G01R23/00
CPC分类号： G01R31/2824 , H03K3/0315
摘要： A method establishes an initial voltage in a ring oscillator and a logic circuit of an integrated circuit device. Following this, the method enables the operating state of the ring oscillator. After enabling the operating state of the ring oscillator, the method steps up to a stressing voltage in the ring oscillator. The initial voltage is approximately one-half the stressing voltage. The stressing voltage creates operating-level stress within the ring oscillator. The method measures the operating-level frequency within the ring oscillator using an oscilloscope (after stepping up to the stressing voltage).
摘要翻译： 一种方法在环形振荡器和集成电路器件的逻辑电路中建立初始电压。 此后，该方法启用环形振荡器的工作状态。 在启用环形振荡器的工作状态之后，该方法在环形振荡器中达到应力电压。 初始电压约为应力电压的一半。 应力电压在环形振荡器内产生工作电平应力。 该方法使用示波器测量环形振荡器内的工作电平频率（升压到应力电压之后）。
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公开(公告)号：US20120128033A1
公开(公告)日：2012-05-24
申请号：US12950508
申请日：2010-11-19
申请人： Wagdi W. Abadeer , Cathryn J. Christiansen , John A. Fifield , Dimitris P. Ioannou , Tom C. Lee , Lilian Kamal
发明人： Wagdi W. Abadeer , Cathryn J. Christiansen , John A. Fifield , Dimitris P. Ioannou , Tom C. Lee , Lilian Kamal
IPC分类号： G01K7/16
CPC分类号： G01K7/16
摘要： A system and a method for measuring temperature within an operating circuit use a Wheatstone bridge within a temperature sensing circuit. One of the resistors in the Wheatstone bridge is a thermally sensitive resistive material layer within the operating circuit. The other three resistors are thermally isolated from the operating circuit. Particular configurations of NFET and PFET devices are used to provide enhanced measurement sensitivity within the temperature sensing circuit that includes the Wheatstone bridge.
摘要翻译： 用于测量操作电路内的温度的系统和方法使用温度感测电路内的惠斯通电桥。 惠斯通电桥中的一个电阻器是操作电路内的热敏电阻材料层。 其他三个电阻器与工作电路热绝缘。 NFET和PFET器件的特殊配置用于在包括惠斯通电桥的温度检测电路中提供增强的测量灵敏度。
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公开(公告)号：US08562210B2
公开(公告)日：2013-10-22
申请号：US12950508
申请日：2010-11-19
发明人： Wagdi W. Abadeer , Cathryn J. Christiansen , John A. Fifield , Dimitris P. Ioannou , Tom C. Lee
CPC分类号： G01K7/16
摘要： A system and a method for measuring temperature within an operating circuit use a Wheatstone bridge within a temperature sensing circuit. One of the resistors in the Wheatstone bridge is a thermally sensitive resistive material layer within the operating circuit. The other three resistors are thermally isolated from the operating circuit. Particular configurations of NFET and PFET devices are used to provide enhanced measurement sensitivity within the temperature sensing circuit that includes the Wheatstone bridge.
摘要翻译： 用于测量操作电路内的温度的系统和方法使用温度感测电路内的惠斯通电桥。 惠斯通电桥中的一个电阻器是操作电路内的热敏电阻材料层。 其他三个电阻器与工作电路热绝缘。 NFET和PFET器件的特殊配置用于在包括惠斯通电桥的温度检测电路中提供增强的测量灵敏度。
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