公开(公告)号：US20060037672A1

公开(公告)日：2006-02-23

申请号：US10969600

申请日：2004-10-19

申请人： David Love ,  Stephen Turner ,  Yun Xu ,  Edward Cawley

发明人： David Love ,  Stephen Turner ,  Yun Xu ,  Edward Cawley

IPC分类号： C22C19/03

CPC分类号： C22C19/03 ,  C22F1/006

摘要： The invention includes an alloy containing equivalent amounts of nickel and titanium. The alloy has shape memory and a metallic purity of at least about 99.995%, and comprises less than about 200 ppm of gases. The invention also includes an alloy comprising titanium and nickel where the titanium and nickel amounts are non-equivalent. The alloy has shape memory and has a metallic purity of at least 99.995%, and contains less than about 200 ppm of gases. The invention further includes a method of producing a shape memory alloy. Titanium is provided having a metallic purity of at least 99.999% and nickel is provided having a metallic purity of at least 99.99%. The titanium and nickel are combined utilizing at least one melting event independently selected from e-beam melting, vacuum arc melting, vacuum induction melting, induction skull melting and plasma melting.

摘要翻译： 本发明包括含有等量的镍和钛的合金。 该合金具有至少约99.995％的形状记忆和金属纯度，并且包含小于约200ppm的气体。 本发明还包括钛和镍的合金，其中钛和镍的量是不相等的。 该合金具有形状记忆，并且具有至少99.995％的金属纯度，并且含有少于约200ppm的气体。 本发明还包括一种制备形状记忆合金的方法。 提供具有至少99.999％的金属纯度的钛，并且提供具有至少99.99％的金属纯度的镍。 使用独立地选自电子束熔化，真空电弧熔化，真空感应熔化，感应颅骨熔化和等离子体熔融的至少一个熔融事件来组合钛和镍。

公开(公告)号：US20050272607A1

公开(公告)日：2005-12-08

申请号：US10860342

申请日：2004-06-02

申请人： Yun Xu ,  Stephen Turner ,  Mathew Cooper ,  Wei Guo ,  David Love ,  Edward Cawley

发明人： Yun Xu ,  Stephen Turner ,  Mathew Cooper ,  Wei Guo ,  David Love ,  Edward Cawley

IPC分类号： C22B34/12 ,  H01B1/00 ,  H01L39/12 ,  H01L39/24

CPC分类号： H01L39/12 ,  C22B34/1295 ,  H01L39/2406 ,  Y10S420/901 ,  Y10S505/805 ,  Y10T29/49014

摘要： The invention includes superconducting titanium-containing compositions having less than 200 ppm, by weight, of a combined total of interstitial materials selected from the group consisting of nitrogen, oxygen, carbon and hydrogen. The invention also includes methods of forming superconducting titanium-containing superconducting compositions containing less than 100 ppm, by weight, of a combined total of interstitial materials selected from the group consisting of nitrogen, oxygen, carbon and hydrogen.

摘要翻译： 本发明包括超导含钛组合物，其具有小于200ppm重量的选自氮，氧，碳和氢的间隙材料的总和。 本发明还包括形成超导含钛超导组合物的方法，所述超导含钛超导组合物含有选自氮，氧，碳和氢的间隙材料的总和小于100ppm重量。

公开(公告)号：US07219412B2

公开(公告)日：2007-05-22

申请号：US10860342

申请日：2004-06-02

申请人： Yun Xu ,  Stephen P. Turner ,  Mathew S. Cooper ,  Wei Guo ,  David B. Love ,  Edward Cawley

发明人： Yun Xu ,  Stephen P. Turner ,  Mathew S. Cooper ,  Wei Guo ,  David B. Love ,  Edward Cawley

IPC分类号： H01L39/24

CPC分类号： H01L39/12 ,  C22B34/1295 ,  H01L39/2406 ,  Y10S420/901 ,  Y10S505/805 ,  Y10T29/49014

摘要： The invention includes superconducting titanium-containing compositions having less than 200 ppm, by weight, of a combined total of interstitial materials selected from the group consisting of nitrogen, oxygen, carbon and hydrogen. The invention also includes methods of forming superconducting titanium-containing superconducting compositions containing less than 100 ppm, by weight, of a combined total of interstitial materials selected from the group consisting of nitrogen, oxygen, carbon and hydrogen.

摘要翻译： 本发明包括超导含钛组合物，其具有小于200ppm重量的选自氮，氧，碳和氢的间隙材料的总和。 本发明还包括形成超导含钛超导组合物的方法，所述超导含钛超导组合物含有选自氮，氧，碳和氢的间隙材料的总和小于100ppm重量。

公开(公告)号：US20050230013A1

公开(公告)日：2005-10-20

申请号：US11148596

申请日：2005-06-08

申请人： Wei Guo ,  Stephen Turner ,  Edward Cawley

发明人： Wei Guo ,  Stephen Turner ,  Edward Cawley

IPC分类号： C01G20060101 ,  C22C19/03 ,  C22F1/10 ,  C23C14/00 ,  C23C14/34 ,  C25B11/00 ,  H01L21/203

CPC分类号： C22C19/03 ,  C23C14/3414 ,  H01J37/3426

摘要： The invention includes sputtering components, such as sputtering targets, comprising high-purity Ni—V. The sputtering components can have a fine average grain size throughout, with an exemplary fine average grain size being a grain size less than or equal to 40 microns. The invention also includes methods of making high-purity Ni—V structures.

摘要翻译： 本发明包括包含高纯Ni-V的溅射元件，如溅射靶。 溅射组分可以具有整个细微的平均晶粒尺寸，示例性的细微平均晶粒尺寸是小于或等于40微米的晶粒尺寸。 本发明还包括制备高纯度Ni-V结构的方法。