公开(公告)号：US20230335987A1

公开(公告)日：2023-10-19

申请号：US18212816

申请日：2023-06-22

Applicant: Delta Electronics, Inc.

Inventor： Kuan-Ting Lee ,  Chen-Chieh Kao ,  Yu-Liang Lin ,  Cheng-Chia Hsiao

IPC: H02H9/04 ,  H03K17/0812 ,  H03K17/60 ,  H03K17/687 ,  H02M3/158 ,  H02M3/155

CPC classification number: H02H9/04 ,  H03K17/08122 ,  H03K17/60 ,  H03K17/687 ,  H02M3/158 ,  H02M3/155

Abstract: A voltage stabilizer is provided for stabilizing a gate-source voltage of a switching element, wherein a source of the switching element receives a first driving voltage. The voltage stabilizer includes a transistor and a first resistor. A base of the transistor receives a second driving voltage, a collector of the bipolar junction transistor is electrically connected to a gate of the switching element, a first terminal of the first resistor is electrically connected to the collector and the gate, a second terminal of the first resistor is electrically connected to the source of the switching element and receives the first driving voltage.

公开(公告)号：US12040607B2

公开(公告)日：2024-07-16

申请号：US18212816

申请日：2023-06-22

Applicant: Delta Electronics, Inc.

Inventor： Kuan-Ting Lee ,  Chen-Chieh Kao ,  Yu-Liang Lin ,  Cheng-Chia Hsiao

IPC: H02H9/04 ,  H02M3/155 ,  H02M3/158 ,  H03K17/0812 ,  H03K17/60 ,  H03K17/687

CPC classification number: H02H9/04 ,  H02M3/155 ,  H02M3/158 ,  H03K17/08122 ,  H03K17/60 ,  H03K17/687

Abstract: A voltage stabilizer is provided for stabilizing a gate-source voltage of a switching element, wherein a source of the switching element receives a first driving voltage. The voltage stabilizer includes a transistor and a first resistor. A base of the transistor receives a second driving voltage, a collector of the bipolar junction transistor is electrically connected to a gate of the switching element, a first terminal of the first resistor is electrically connected to the collector and the gate, a second terminal of the first resistor is electrically connected to the source of the switching element and receives the first driving voltage.

公开(公告)号：US11735909B2

公开(公告)日：2023-08-22

申请号：US17726147

申请日：2022-04-21

Applicant: Delta Electronics, Inc.

Inventor： Kuan-Ting Lee ,  Chen-Chieh Kao ,  Yu-Liang Lin ,  Cheng-Chia Hsiao

IPC: H02H9/04 ,  H02M3/155 ,  H03K17/0812 ,  H03K17/60 ,  H03K17/687 ,  H02M3/158

CPC classification number: H03K17/08122 ,  H02M3/158 ,  H03K17/60 ,  H03K17/687

Abstract: A voltage stabilizer is provided for stabilizing a gate-source voltage of a switching element, wherein a source of the switching element receives a first driving voltage. The voltage stabilizer includes a bipolar junction transistor, a first resistor and a second resistor. A base of the bipolar junction transistor receives a second driving voltage, a collector of the bipolar junction transistor is electrically connected to a gate of the switching element, a first terminal of the first resistor is electrically connected to the collector and the gate, a second terminal of the first resistor is electrically connected to the source of the switching element and receives the first driving voltage, a first terminal of the second resistor is electrically connected to an emitter of the bipolar junction transistor, and a second terminal of the second resistor receives a third driving voltage The bipolar junction transistor is operated in an active region.

公开(公告)号：US20230208132A1

公开(公告)日：2023-06-29

申请号：US17726147

申请日：2022-04-21

Applicant: Delta Electronics, Inc.

Inventor： Kuan-Ting Lee ,  Chen-Chieh Kao ,  Yu-Liang Lin ,  Cheng-Chia Hsiao

IPC: H03K17/0812 ,  H02M3/158 ,  H03K17/687 ,  H03K17/60

CPC classification number: H03K17/08122 ,  H02M3/158 ,  H03K17/687 ,  H03K17/60

Abstract: A voltage stabilizer is provided for stabilizing a gate-source voltage of a switching element, wherein a source of the switching element receives a first driving voltage. The voltage stabilizer includes a bipolar junction transistor, a first resistor and a second resistor. A base of the bipolar junction transistor receives a second driving voltage, a collector of the bipolar junction transistor is electrically connected to a gate of the switching element, a first terminal of the first resistor is electrically connected to the collector and the gate, a second terminal of the first resistor is electrically connected to the source of the switching element and receives the first driving voltage, a first terminal of the second resistor is electrically connected to an emitter of the bipolar junction transistor, and a second terminal of the second resistor receives a third driving voltage The bipolar junction transistor is operated in an active region.