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    Multi-layer magnetoelectronic device
    2.
    发明授权
    Multi-layer magnetoelectronic device 有权

    公开(公告)号：US11170805B2

    公开(公告)日：2021-11-09

    申请号：US15895236

    申请日：2018-02-13

    申请人： Deutsches Elektronen-Synchrotron DESY

    发明人： Kai Schlage ,  Denise Erb ,  Ralf Röhlsberger ,  Hans-Christian Wille ,  Daniel Schumacher ,  Lars Bocklage

    IPC分类号： G11C11/15 ,  G11B5/39 ,  G11B5/85 ,  H01F10/32 ,  H01F41/30 ,  H01L43/12

    摘要： A method of producing a multilayer magnetoelectronic device and a related device. The method includes depositing a multilayer structure including at least two ferromagnetic layers disposed one on top of the other and each having a magnetic anisotropy with a corresponding magnetic moment. A magnetization curve is specified for the magnetoelectronic device. The number of ferromagnetic layers and, for each of the ferromagnetic layers, the magnetic moment and the magnetic hardness for obtaining the specified magnetization curve are determined. For each of the ferromagnetic layers a magnetic material, a thickness, an azimuthal angle and an angle of incidence are determined for obtaining the determined magnetic moment and magnetic hardness of the respective ferromagnetic layer. The multilayer structure is deposited using the determined material, thickness, azimuthal angle and angle of incidence for each of the ferromagnetic layers.

    METHOD OF PRODUCING A MULTI-LAYER MAGNETOELECTRONIC DEVICE AND MAGNETOELECTRONIC DEVICE
    4.
    发明申请
    METHOD OF PRODUCING A MULTI-LAYER MAGNETOELECTRONIC DEVICE AND MAGNETOELECTRONIC DEVICE 有权
    制造多层磁电子装置和磁电装置的方法

    公开(公告)号：US20150064499A1

    公开(公告)日：2015-03-05

    申请号：US14475800

    申请日：2014-09-03

    申请人： Deutsches Elektronen-Synchrotron DESY

    发明人： Kai Schlage ,  Denise Erb ,  Ralf Röhlsberger ,  Hans-Christian Wille ,  Daniel Schumacher ,  Lars Bocklage

    IPC分类号： G11B5/39 ,  G11B5/85

    CPC分类号： G11B5/3906 ,  G11B5/85 ,  G11B2005/3996 ,  H01F10/324 ,  H01F41/302 ,  H01L43/12 ,  Y10T428/1129

    摘要： A method of producing a multilayer magnetoelectronic device and a related device. The method includes depositing a multilayer structure including at least two ferromagnetic layers disposed one on top of the other and each having a magnetic anisotropy with a corresponding magnetic moment. A magnetization curve is specified for the magnetoelectronic device. The number of ferromagnetic layers and, for each of the ferromagnetic layers, the magnetic moment and the magnetic hardness for obtaining the specified magnetization curve are determined. For each of the ferromagnetic layers a magnetic material, a thickness, an azimuthal angle and an angle of incidence are determined for obtaining the determined magnetic moment and magnetic hardness of the respective ferromagnetic layer. The multilayer structure is deposited using the determined material, thickness, azimuthal angle and angle of incidence for each of the ferromagnetic layers.

    摘要翻译： 一种制造多层磁电子器件的方法和相关器件。 该方法包括沉积包括至少两个铁磁层的多层结构，该两层铁磁层一个放置在另一个之上，并且各自具有相应磁矩的磁各向异性。 为磁电子器件规定了磁化曲线。 确定铁磁层的数量，并且对于每个铁磁层，确定用于获得规定的磁化曲线的磁矩和磁性硬度。 对于每个铁磁层，确定磁性材料，厚度，方位角和入射角，以获得确定的铁磁层的磁矩和磁性硬度。 使用确定的材料，厚度，方位角和每个铁磁层的入射角来沉积多层结构。