公开(公告)号：US06551927B1

公开(公告)日：2003-04-22

申请号：US09880920

申请日：2001-06-15

申请人： Dian-Hau Chen ,  Kwang-Ming Lin ,  Yu-Ku Lin ,  Tong-Hua Kuan ,  Jin-Kuen Lan

发明人： Dian-Hau Chen ,  Kwang-Ming Lin ,  Yu-Ku Lin ,  Tong-Hua Kuan ,  Jin-Kuen Lan

IPC分类号： H01L2144

CPC分类号： H01L29/665 ,  H01L21/28518

摘要： A cobalt silicide process having a titanium-rich/titanium nitride capping layer to improve junction leakage is described. Semiconductor device structures to be silicided are formed in and on a semiconductor substrate. A cobalt layer is deposited overlying the semiconductor device structures. A titanium-rich/titanium nitride capping layer is deposited overlying the cobalt layer. Thereafter, a cobalt silicide layer is formed on the semiconductor device structures. The titanium-rich/titanium nitride capping layer and an unreacted portion of the cobalt layer are removed to complete fabrication of the integrated circuit device.

摘要翻译： 描述了具有富钛/氮化钛覆盖层以改善结漏电的硅化钴工艺。 半导体衬底上形成硅化硅半导体器件结构。 覆盖在半导体器件结构上的钴层被沉积。 覆盖在钴层上的富钛/氮化钛覆盖层被沉积。 此后，在半导体器件结构上形成钴硅化物层。 除去富钛/氮化钛覆盖层和钴层的未反应部分以完成集成电路器件的制造。