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1.发明授权System and method for power detection in a power amplifier using an adjustable load 有权使用可调负载的功率放大器中的功率检测系统和方法公开(公告)号：US08452243B2
公开(公告)日：2013-05-28
申请号：US12541338
申请日：2009-08-14
CPC分类号： G01R31/2837 , H03F1/0205 , H03F1/0211 , H03F1/56 , H03F3/24 , H03F2200/207
摘要： A power amplifier system includes a first power detector configured to detect a forward power output of a power amplifier, the first power detector configured to provide a first power detector output and an adjustable load coupled to the output of the power amplifier and configured to receive the first power detector output, the adjustable load configured to provide an adjustable impedance at the output of the power amplifier in response to one of the output of the power amplifier and the first power detector output.
摘要翻译： 功率放大器系统包括被配置为检测功率放大器的正向功率输出的第一功率检测器，第一功率检测器被配置为提供第一功率检测器输出和耦合到功率放大器的输出的可调负载，并且被配置为接收 第一功率检测器输出，可调节负载被配置为响应于功率放大器和第一功率检测器输出之一的输出而在功率放大器的输出处提供可调阻抗。
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2.发明申请System And Method For Power Detection In A Power Amplifier Using An Adjustable Load 有权使用可调负载的功率放大器中功率检测的系统和方法公开(公告)号：US20090318093A1
公开(公告)日：2009-12-24
申请号：US12541338
申请日：2009-08-14
CPC分类号： G01R31/2837 , H03F1/0205 , H03F1/0211 , H03F1/56 , H03F3/24 , H03F2200/207
摘要： A power amplifier system includes a first power detector configured to detect a forward power output of a power amplifier, the first power detector configured to provide a first power detector output and an adjustable load coupled to the output of the power amplifier and configured to receive the first power detector output, the adjustable load configured to provide an adjustable impedance at the output of the power amplifier in response to one of the output of the power amplifier and the first power detector output.
摘要翻译： 功率放大器系统包括被配置为检测功率放大器的正向功率输出的第一功率检测器，第一功率检测器被配置为提供第一功率检测器输出和耦合到功率放大器的输出的可调负载，并且被配置为接收 第一功率检测器输出，可调节负载被配置为响应于功率放大器和第一功率检测器输出之一的输出而在功率放大器的输出处提供可调阻抗。
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3.发明申请Semiconductor component comprising an integrated capacitor structure tha has a plurality of metallization planes 有权包括集成电容器结构的半导体元件具有多个金属化平面公开(公告)号：US20050219790A1
公开(公告)日：2005-10-06
申请号：US10511189
申请日：2003-04-17
申请人： Hichem Abdallah , Jurgen Ohm
发明人： Hichem Abdallah , Jurgen Ohm
IPC分类号： H01L21/02 , H01L23/522 , H01L27/08 , H01G4/228
CPC分类号： H01L28/90 , H01L23/5223 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component includes an insulating layer, which is configured on a semiconductor substrate and in which a capacitor structure is formed. Said capacitor structure comprises at least two parallel metallization planes, whereby at least one of said planes is configured in a lattice and inhomogeneous structure, which are electrically connected to the first metallization plane, extended at least partially into the cavities of the latticework metallization plane.
摘要翻译： 半导体部件包括配置在半导体基板上并形成有电容器结构的绝缘层。 所述电容器结构包括至少两个平行的金属化平面，由此至少一个所述平面被配置为格状和不均匀的结构，其电连接到第一金属化平面，至少部分地延伸到网格金属化平面的空腔中。
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4.发明授权Semiconductor component with integrated capacitance structure having a plurality of metallization planes 有权具有集成电容结构的半导体元件具有多个金属化平面公开(公告)号：US07061746B2
公开(公告)日：2006-06-13
申请号：US10511189
申请日：2003-04-17
申请人： Hichem Abdallah , Jürgen Öhm
发明人： Hichem Abdallah , Jürgen Öhm
IPC分类号： H01G4/30
CPC分类号： H01L28/90 , H01L23/5223 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component includes an insulating layer, which is configured on a semiconductor substrate and in which a capacitor structure is formed. The capacitor structure has at least two parallel metallization planes, whereby at least one of the planes is configured in a lattice and inhomogeneous structure, which are electrically connected to the first metallization plane, extended at least partially into the cavities of the latticework metallization plane.
摘要翻译： 半导体部件包括配置在半导体基板上并形成有电容器结构的绝缘层。 电容器结构具有至少两个平行的金属化平面，由此至少一个平面被配置成晶格和不均匀的结构，其电连接到第一金属化平面，至少部分地延伸到网格金属化平面的空腔中。
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