Multi-layered bipolar field-effect transistor and method of manufacturing the same
    3.
    发明授权
    Multi-layered bipolar field-effect transistor and method of manufacturing the same 有权
    多层双极场效应晶体管及其制造方法

    公开(公告)号:US07935961B2

    公开(公告)日:2011-05-03

    申请号:US11976090

    申请日:2007-10-19

    IPC分类号: H01L51/05

    摘要: Disclosed herein is a multi-layered bipolar field-effect transistor, including a gate electrode, a gate insulating layer, an electron transport layer, a hole transport layer, a source electrode, and a drain electrode, in which an intermediate separating layer is formed between the electron transport layer and the hole transport layer, and a method of manufacturing the same. The multi-layered bipolar field-effect transistor has advantages in that, since a P-channel and a N-channel are effectively separated, the electrical properties thereof, such as current ON/OFF ratio, electron mobility, hole mobility, and the like, are improved, and, since a device can be manufactured through a solution process without damaging layers, the processability thereof is improved.

    摘要翻译: 本文公开了一种多层双极场效应晶体管,其包括栅电极,栅极绝缘层,电子传输层,空穴传输层,源电极和漏电极,其中形成中间分离层 在电子传输层和空穴传输层之间,以及其制造方法。 多层双极场效应晶体管的优点在于,由于P沟道和N沟道被有效地分离,所以其电特性如电流ON / OFF比,电子迁移率,空穴迁移率等 ,并且由于可以通过溶液方法制造装置而不损坏层,因此其加工性得到改善。