公开(公告)号：US20090183833A1

公开(公告)日：2009-07-23

申请号：US12414443

申请日：2009-03-30

Applicant: Do-Hyeong KIM

Inventor： Do-Hyeong KIM

IPC: C23F1/08 ,  C23C16/54

CPC classification number: C23C16/507 ,  C23C16/452 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32623

Abstract: A plasma processing apparatus comprising: a process chamber for defining a plasma processing space in which a substrate holder for mounting a substrate thereon is installed; a plasma chamber in communication with an upper portion of the process chamber to generate and inject plasma into the plasma processing space such that the substrate is processed; a screen interposed between the process chamber and the plasma chamber to block plasma ions from being injected from the plasma chamber; and an ion trap for protecting the surface of the substrate from damage due to the injected plasma ion.

Abstract translation: 一种等离子体处理装置，包括：用于限定等离子体处理空间的处理室，其中安装用于安装其上的基板的基板保持器; 等离子体室，与处理室的上部连通，以产生等离子体并将等离子体注入到等离子体处理空间中，使得处理基板; 介于所述处理室和所述等离子体室之间以屏蔽等离子体离子从所述等离子体室注入的屏幕; 以及用于保护衬底的表面的离子阱不会由于注入的等离子体离子而损坏。