公开(公告)号：US5354696A

公开(公告)日：1994-10-11

申请号：US95978

申请日：1993-07-22

申请人： Doeke Oostra ,  Jozef J. M. Ottenheim ,  Jarig Politiek

发明人： Doeke Oostra ,  Jozef J. M. Ottenheim ,  Jarig Politiek

IPC分类号： H01L21/265 ,  H01L21/331 ,  H01L29/737 ,  H01L21/268

CPC分类号： H01L29/66242 ,  H01L21/26506 ,  H01L21/2658 ,  H01L29/7375

摘要： A method of manufacturing a semiconductor device in which a surface zone (3) adjoining a surface (2) is formed in a silicon semiconductor body (1) by local application of carbon and dopant atoms, the carbon atoms being provided by means of implantation (4). Halogen atoms are provided simultaneously with the carbon atoms by means of an implantation with ions of a carbon-halogen compound, after which a heat treatment is carried out such that non-bonded halogen atoms are removed from the surface zone (3). Such a method is suitable for making a surface zone (3) which has a greater bandgap than silicon. The surface (3) is suitable, for example, for making an emitter region of a heterojunction bipolar transistor (HBT).

摘要翻译： 一种半导体器件的制造方法，其中通过局部施加碳和掺杂剂原子在硅半导体本体（1）中形成与表面（2）相邻的表面区域（3），所述碳原子通过注入（ 4）。 卤素原子通过用碳 - 卤素化合物的离子注入与碳原子同时提供，然后进行热处理，使得未键合的卤素原子从表面区域（3）除去。 这种方法适用于制造具有比硅更大的带隙的表面区（3）。 表面（3）例如适用于制造异质结双极晶体管（HBT）的发射极区域。