METHOD AND APPARATUS UTILIZING A SINGLE LIFT MECHANISM FOR PROCESSING AND TRANSFER OF SUBSTRATES
    1.
    发明申请
    METHOD AND APPARATUS UTILIZING A SINGLE LIFT MECHANISM FOR PROCESSING AND TRANSFER OF SUBSTRATES 审中-公开
    使用单个提升机械的方法和装置,用于处理和转移基板

    公开(公告)号:US20120234243A1

    公开(公告)日:2012-09-20

    申请号:US13413744

    申请日:2012-03-07

    IPC分类号: C23C16/458 H01L21/00

    摘要: Embodiments of the present invention relate to apparatus and methods for loading substrates into processing chambers, processing the substrates in the processing chamber, and transferring the substrates out of the processing chamber using a single lift and rotational mechanism. One embodiment of the present invention provides a method for processing one or more substrates. The method includes transferring a substrate carrier, having one or more substrates disposed thereon, to a chamber volume, supporting the substrate carrier within the chamber volume using a set of lift pins, transferring the substrate carrier from the set of lift pins to an edge ring within the chamber volume, and contacting the edge ring with the set of lift pins to control the position of the substrate carrier within the chamber volume.

    摘要翻译: 本发明的实施例涉及将基板装载到处理室中的装置和方法,处理处理室中的基板,以及使用单个提升和旋转机构将基板转移到处理室之外。 本发明的一个实施例提供了一种用于处理一个或多个基底的方法。 该方法包括将其上设置有一个或多个衬底的衬底载体转移到室体积,使用一组提升销将衬底载体支撑在室体内,将衬垫载体从该组提升销传送到边缘环 并且使边缘环与该组提升销接触,以控制基板载体在室容积内的位置。

    APPARATUS HAVING IMPROVED SUBSTRATE TEMPERATURE UNIFORMITY USING DIRECT HEATING METHODS
    2.
    发明申请
    APPARATUS HAVING IMPROVED SUBSTRATE TEMPERATURE UNIFORMITY USING DIRECT HEATING METHODS 审中-公开
    使用直接加热方法改善基板温度均匀性的装置

    公开(公告)号:US20120108081A1

    公开(公告)日:2012-05-03

    申请号:US13282914

    申请日:2011-10-27

    IPC分类号: H01L21/26 F27D11/12

    摘要: Embodiments of the present invention generally relate to an apparatus and methods for uniformly heating substrates in a processing chamber. In one embodiment, an apparatus generally includes a substrate supporting structure that is able to help minimize the temperature variation across each of the substrates during thermal processing. In one configuration, a substrate supporting structure is adapted to selectively support a substrate carrier to control the heat lost from regions of each of the substrates disposed on the substrate carrier. The substrate supporting structure is thus configured to provide a uniform temperature profile across each of the plurality of substrates during processing.

    摘要翻译: 本发明的实施例一般涉及用于在处理室中均匀加热基板的装置和方法。 在一个实施例中,设备通常包括基板支撑结构,其能够帮助最小化热处理期间每个基板的温度变化。 在一种配置中,衬底支撑结构适于选择性地支撑衬底载体以控制从布置在衬底载体上的每个衬底的区域中损失的热量。 因此,衬底支撑结构被构造成在处理期间提供跨越多个衬底中的每一个的均匀的温度分布。