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103 条记录 (耗时 0.033 秒)

    EPITAXIAL GROWTH TEMPERATURE CONTROL IN LED MANUFACTURE
    1.
    发明申请
    EPITAXIAL GROWTH TEMPERATURE CONTROL IN LED MANUFACTURE 审中-公开
    LED制造中的外延生长温度控制

    公开(公告)号：US20120118225A1

    公开(公告)日：2012-05-17

    申请号：US13231852

    申请日：2011-09-13

    申请人： Wei-Yung HSU ,  Alain DUBOUST ,  Hua CHUNG ,  Liang-Yuh CHEN ,  Donald J.K. OLGADO

    发明人： Wei-Yung HSU ,  Alain DUBOUST ,  Hua CHUNG ,  Liang-Yuh CHEN ,  Donald J.K. OLGADO

    IPC分类号： C30B25/16 ,  B05C11/06 ,  C30B25/10 ,  H01L21/66

    CPC分类号： C23C16/52 ,  C30B25/10 ,  C30B25/16 ,  H01L21/67248 ,  H01L33/007

    摘要： Apparatus and method for control of epitaxial growth temperatures during manufacture of light emitting diodes (LEDs). Embodiments include measurement of a substrate and/or carrier temperature during a recipe stabilization period; determination of a temperature drift based on the measurement; and modification of a growth temperature based on a temperature offset determined in response to the temperature drift exceeding a threshold criteria. In an embodiment, a statistic derived from a plurality of pyrometric measurements made during the recipe stabilization over several runs is employed to offset each of a set of growth temperatures utilized to form a multiple quantum well (MQW) structure.

    摘要翻译： 用于在制造发光二极管（LED）期间控制外延生长温度的装置和方法。 实施例包括在食谱稳定期间测量基质和/或载体温度; 基于测量确定温度漂移; 以及基于响应于超过阈值标准的温度漂移确定的温度偏移来修改生长温度。 在一个实施例中，采用在多次运行中的配方稳定期间进行的多个高温测量得到的统计量来抵消用于形成多量子阱（MQW）结构的一组生长温度中的每一个。

    RETAINING RING WITH CONDUCTIVE PORTION
    3.
    发明申请
    RETAINING RING WITH CONDUCTIVE PORTION 审中-公开
    带导电部件的保持环

    公开(公告)号：US20080038999A1

    公开(公告)日：2008-02-14

    申请号：US11865303

    申请日：2007-10-01

    申请人： Antoine Manens ,  Suresh Shrauti ,  Alain Duboust ,  Yan Wang ,  Liang-Yuh Chen

    发明人： Antoine Manens ,  Suresh Shrauti ,  Alain Duboust ,  Yan Wang ,  Liang-Yuh Chen

    IPC分类号： H01L21/302 ,  B24B5/00

    CPC分类号： B23H5/08 ,  B24B37/32

    摘要： A retaining ring for use with electrochemical mechanical processing is described. The retaining ring has a generally annular body formed with a conductive portion and a non-conductive portion. The non-conductive portion contacts the substrate during polishing. The conductive portion is electrically biased during polishing to reduce the edge effect that tends to occur with conventional electrochemical mechanical processing systems.

    摘要翻译： 描述了一种用于电化学机械加工的保持环。 保持环具有形成有导电部分和非导电部分的大致环形体。 非导电部分在抛光期间接触基板。 导电部分在抛光期间被电偏置以减少常规电化学机械处理系统倾向于发生的边缘效应。

    Method and apparatus for electrochemical mechanical polishing of cu with higher liner velocity for better surface finish and higher removal rate during clearance
    4.
    发明申请
    Method and apparatus for electrochemical mechanical polishing of cu with higher liner velocity for better surface finish and higher removal rate during clearance 审中-公开
    用于电化学机械抛光的方法和装置，具有更高的衬垫速度以更好的表面光洁度和更高的清除率

    公开(公告)号：US20070251832A1

    公开(公告)日：2007-11-01

    申请号：US11413493

    申请日：2006-04-27

    申请人： Tianbao Du ,  Feng Liu ,  You Wang ,  Alain Duboust ,  Wei-Yung Hsu

    发明人： Tianbao Du ,  Feng Liu ,  You Wang ,  Alain Duboust ,  Wei-Yung Hsu

    IPC分类号： B23H9/00

    CPC分类号： B23H5/08 ,  B24B21/04 ,  B24B37/04 ,  B24B57/02

    摘要： The present invention relates to an apparatus and a method for polishing a semiconductor substrate with high throughput. One embodiment of the present invention provides an apparatus for electro-chemical mechanical polishing a conductive surface on a substrate. The apparatus comprises a fluid basin having a fluid volume for retaining a polishing solution, a linear polishing station disposed in the fluid basin, wherein the linear polishing station having at least one electrode and a conductive top surface with a linear movement, the conductive top surface is configured to provide an electrical bias to the conductive surface on the substrate, and a carrier head configured to retain the substrate and position the conductive surface of the substrate to be in contact with the conductive top surface of the linear polishing station.

    摘要翻译： 本发明涉及一种以高产量抛光半导体衬底的装置和方法。 本发明的一个实施例提供了一种用于对基底上的导电表面进行电化学机械抛光的装置。 该装置包括具有用于保持抛光溶液的流体体积的流体池，设置在流体池中的线性抛光站，其中线性抛光站具有至少一个电极和具有线性运动的导电顶表面，导电顶表面 被配置为向衬底上的导电表面提供电偏压，以及被配置为保持衬底并且将衬底的导电表面定位成与线性抛光站的导电顶表面接触的载体头。

    Method for electrochemically polishing a conductive material on a substrate
    5.
    发明申请
    Method for electrochemically polishing a conductive material on a substrate 审中-公开
    在基板上电化学研磨导电材料的方法

    公开(公告)号：US20070187258A1

    公开(公告)日：2007-08-16

    申请号：US11355769

    申请日：2006-02-15

    申请人： Tianbao Du ,  Feng Liu ,  Alain Duboust ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    发明人： Tianbao Du ,  Feng Liu ,  Alain Duboust ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    IPC分类号： B23H5/00

    CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  H01L21/32125

    摘要： Methods are provided for removing conductive materials from a substrate surface. In one aspect, a method includes providing a substrate comprising dielectric feature definitions formed between substrate field regions, a barrier material disposed in the feature definitions and on the substrate field regions, and a conductive material disposed on the barrier material, polishing the substrate to substantially remove a bulk portion of the conductive material with a direct current bias, and polishing the substrate to remove a residual portion of the conductive material with a pulse bias.

    摘要翻译： 提供了从衬底表面去除导电材料的方法。 在一个方面，一种方法包括提供包括在衬底场区域之间形成的介电特征定义的衬底，设置在特征定义中的衬底场区域上的阻挡材料和设置在阻挡材料上的导电材料， 以直流偏压去除导电材料的主体部分，并抛光衬底以用脉冲偏压去除导电材料的剩余部分。

    Hydrogen bubble reduction on the cathode using double-cell designs
    6.
    发明授权
    Hydrogen bubble reduction on the cathode using double-cell designs 失效
    使用双电池设计在阴极上进行氢气还原

    公开(公告)号：US07229535B2

    公开(公告)日：2007-06-12

    申请号：US10455861

    申请日：2003-06-06

    申请人： Yan Wang ,  Feng Q. Liu ,  Alain Duboust ,  Siew S. Neo ,  Liang-Yuh Chen ,  Yongqi Hu

    发明人： Yan Wang ,  Feng Q. Liu ,  Alain Duboust ,  Siew S. Neo ,  Liang-Yuh Chen ,  Yongqi Hu

    IPC分类号： C25F7/00 ,  B23H5/06 ,  C25F3/00 ,  C25F3/12 ,  C25F3/30 ,  B23H3/00

    CPC分类号： B23H3/08 ,  B23H5/08 ,  B24B37/0056 ,  B24B37/044 ,  B24B37/046 ,  C09G1/04 ,  C25F3/02 ,  H01L21/32125 ,  H01L21/32134

    摘要： An apparatus and method for planarizing a surface of a substrate using a chamber separated into two parts by a membrane, and two separate electrolytes is provided. The embodiments of the present invention generally provide an electrochemical mechanical polishing system that reduces the number of defects found on the substrate surface after polishing. An exemplary electrochemical apparatus includes a physical barrier that prevents any trapped gas or gas generated during processing from residing in areas that can cause defects on the substrate. The process can be aided by the addition of various chemical components to the electrolyte that tend to reduce the gas generation at the cathode surface during the ECMP anodic dissolution process.

    摘要翻译： 使用通过膜分离成两部分的室来平坦化基板的表面的装置和方法，以及两个单独的电解质。 本发明的实施方案通常提供一种电化学机械抛光系统，其减少抛光后在基底表面上发现的缺陷数量。 示例性电化学装置包括物理屏障，其防止在处理期间产生的任何捕获的气体或气体驻留在可能导致基板上的缺陷的区域中。 该方法可以通过在电解质中添加各种化学成分来辅助，该电解质在ECMP阳极溶解过程期间倾向于减少阴极表面的气体产生。