公开(公告)号：US20130306466A1

公开(公告)日：2013-11-21

申请号：US13617741

申请日：2012-09-14

Applicant: Hong Long NING ,  Byeong-Beom KIM ,  Joon Yong PARK ,  Chang Oh JEONG ,  Sang Won SHIN ,  Dong Min LEE ,  Xun Zhu

Inventor： Hong Long NING ,  Byeong-Beom KIM ,  Joon Yong PARK ,  Chang Oh JEONG ,  Sang Won SHIN ,  Dong Min LEE ,  Xun Zhu

IPC: C23C14/08

CPC classification number: C23C14/3407

Abstract: A sputtering target includes a plurality of targets and edges of the targets overlap each other.

Abstract translation: 溅射靶包括多个靶，靶的边缘彼此重叠。

公开(公告)号：US20120133018A1

公开(公告)日：2012-05-31

申请号：US13182180

申请日：2011-07-13

Applicant: Dong Min LEE

Inventor： Dong Min LEE

IPC: H01L23/525

CPC classification number: H01L23/5252 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of repairing a semiconductor device includes forming a first conductive interconnection and a second conductive interconnection spaced from the first conductive interconnection on a semiconductor substrate, forming a magnetic fuse on the first conductive interconnection and forming a first contact plug on the second conductive interconnection, forming a metal interconnection on the magnetic fuse and the first contact plug, and applying a bias to the first conductive interconnection or to the second conductive interconnection corresponding to a normal cell or a redundancy cell and the metal interconnection. The method can readily prevent the problems caused in a laser cutting method without using a method of physically cutting a fuse by radiation of a laser when a semiconductor device fuse is repaired.

Abstract translation: 一种修复半导体器件的方法包括在半导体衬底上形成与第一导电布线间隔开的第一导电互连和第二导电互连，在第一导电互连上形成磁性熔丝并在第二导电互连上形成第一接触插塞， 在所述磁性熔断器和所述第一接触插塞上形成金属互连，以及向所述第一导电互连或对应于正常电池或冗余电池和所述金属互连的所述第二导电互连施加偏压。 该方法可以容易地防止在激光切割方法中引起的问题，而不使用在半导体器件熔丝被修复时通过激光的辐射物理切割熔丝的方法。