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    METHOD OF CONTROLLING A LOAD CURRENT, LOAD CURRENT CONTROL DEVICE, AND MOBILE DEVICE HAVING THE SAME
    1.
    发明申请
    METHOD OF CONTROLLING A LOAD CURRENT, LOAD CURRENT CONTROL DEVICE, AND MOBILE DEVICE HAVING THE SAME 有权
    控制负载电流，负载电流控制装置的方法和具有该负载电流控制装置的移动装置

    公开(公告)号：US20140047248A1

    公开(公告)日：2014-02-13

    申请号：US13959043

    申请日：2013-08-05

    申请人： Dong-Hun HEO ,  Sang-Hyun CHO ,  Hyung-Jong KO

    发明人： Dong-Hun HEO ,  Sang-Hyun CHO ,  Hyung-Jong KO

    IPC分类号： H02J7/00 ,  G06F1/26

    CPC分类号： H02J7/0068 ,  G06F1/26 ,  H02J7/0063 ,  H02J2007/0067

    摘要： A method of controlling a load current is provided. By the method, a battery voltage control operation is begun when a battery voltage becomes lower than a first threshold value, whether a gradient of the battery voltage is a positive gradient or a negative gradient is determined at an interval of a reference or, alternatively, predetermined control time, the load current is controlled based on the gradient of the battery voltage at an interval of the reference or, alternatively, predetermined control time, and the battery voltage control operation is finished when the battery voltage becomes higher than a second threshold value.

    摘要翻译： 提供了一种控制负载电流的方法。 通过该方法，当电池电压变得低于第一阈值时，开始电池电压控制操作，电池电压的梯度是正梯度还是以参考的间隔确定负梯度，或者， 预定的控制时间，基于参考电压的间隔的电池电压的梯度来控制负载电流，或者替代地，预定的控制时间，并且当电池电压变得高于第二阈值时，电池电压控制操作结束 。

    THERMOELECTRIC ELEMENT, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
    2.
    发明申请
    THERMOELECTRIC ELEMENT, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE INCLUDING THE SAME 有权
    热电元件及其制造方法和包括其的半导体器件

    公开(公告)号：US20160027986A1

    公开(公告)日：2016-01-28

    申请号：US14740466

    申请日：2015-06-16

    申请人： KWANG-HO KIM ,  Jun-Hyeok YANG ,  Hyung-Jong KO ,  Se-Ki KIM ,  Ho-Jin PARK ,  Se-Ra AN

    发明人： KWANG-HO KIM ,  Jun-Hyeok YANG ,  Hyung-Jong KO ,  Se-Ki KIM ,  Ho-Jin PARK ,  Se-Ra AN

    IPC分类号： H01L35/32

    CPC分类号： H01L35/32 ,  H01L25/18 ,  H01L27/16 ,  H01L2924/0002 ,  Y10S257/93

    摘要： A thermoelectric element is provided as follows. First and second semiconductor fin structures are disposed on a semiconductor substrate. Each semiconductor fin structure extends in a first direction, protruding from the semiconductor substrate. First and second semiconductor nanowires are disposed on the first and second semiconductor fin structures, respectively. The first semiconductor nanowires include first impurities. The second semiconductor nanowires include second impurities different from the first impurities. A first electrode is connected to first ends of the first and second semiconductor nanowires. A second electrode is connected to second ends of the first semiconductor nanowires. A third electrode is connected to second ends of the second semiconductor nanowires.

    摘要翻译： 如下提供热电元件。 第一和第二半导体鳍片结构设置在半导体衬底上。 每个半导体鳍结构在从半导体衬底突出的第一方向上延伸。 第一和第二半导体纳米线分别设置在第一和第二半导体鳍片结构上。 第一半导体纳米线包括第一杂质。 第二半导体纳米线包括与第一杂质不同的第二杂质。 第一电极连接到第一和第二半导体纳米线的第一端。 第二电极连接到第一半导体纳米线的第二端。 第三电极连接到第二半导体纳米线的第二端。