公开(公告)号：US20130056642A1

公开(公告)日：2013-03-07

申请号：US13542936

申请日：2012-07-06

申请人： Dong-gun LEE ,  Seong-sue Kim

发明人： Dong-gun LEE ,  Seong-sue Kim

IPC分类号： G01J1/04

CPC分类号： G03F1/82 ,  B82Y10/00 ,  B82Y40/00 ,  G01J1/4228 ,  G01J1/4257 ,  G03F1/22

摘要： An aerial image measuring apparatus includes an extreme ultra-violet (EUV) light generation unit configured to generate EUV light, a moving unit configured to mount an EUV mask and to move the EUV mask in x and y axis directions, a primary reduction optics configured to primarily reduce a divergence of the EUV light generated by the EUV light generation unit, a secondary reduction optics configured to secondarily reduce the divergence of the primarily reduced EUV light, and a detection unit configured to sense energy information from the secondarily reduced EUV light reflected from the plurality of regions on the EUV mask, the secondarily reduced EUV light being incident on and reflected from a plurality of regions on the EUV mask.

摘要翻译： 一种空间图像测量装置，包括：被配置为产生EUV光的极紫外（EUV）光产生单元，被配置为安装EUV掩模并在x轴和y轴方向上移动EUV掩模的移动单元， 以主要减少由EUV光发生单元产生的EUV光的发散，配置成二次减少主要减少的EUV光的发散的次级减光光学元件和被配置为从二次降低的EUV光中检测能量信息的检测单元 在EUV掩模上的多个区域中，二次还原的EUV光入射到EUV掩模上的多个区域并从其反射。

公开(公告)号：US20150160550A1

公开(公告)日：2015-06-11

申请号：US14565087

申请日：2014-12-09

申请人： Sang-hyun KIM ,  Seong-sue KIM ,  Dong-gun LEE

发明人： Sang-hyun KIM ,  Seong-sue KIM ,  Dong-gun LEE

IPC分类号： G03F1/72 ,  G03F1/74 ,  G03F7/40 ,  G03F1/52 ,  G03F1/38

CPC分类号： G03F1/24 ,  G03F1/38 ,  G03F1/72 ,  G03F1/74

摘要： Provided are a photomask and a method of correcting errors thereof. The photomask includes a multilayer reflection film covering one side surface of a substrate and an energy receiving layer covering the other side surface of the substrate. The method includes determining a local correction position on a frontside surface of the photomask according to a detected error of the photomask, and locally applying an energy beam to a backside surface region of the photomask aligned with the local correction position in a thickness direction of the photomask. The invention may be applicable to structures other than photomasks that benefit from modification of surface heights or selectively applied stress.

摘要翻译： 提供一种光掩模和一种校正其错误的方法。 光掩模包括覆盖基板的一个侧表面的多层反射膜和覆盖基板的另一侧表面的能量接收层。 该方法包括根据检测到的光掩模误差确定光掩模的前表面上的局部校正位置，并将能量束局部地施加到与沿局部校正位置的局部校正位置对准的光掩模的背侧表面区域 光掩模 本发明可以应用于受到表面高度的改变或选择性施加的应力的光掩模以外的结构的影响。

公开(公告)号：US20120008123A1

公开(公告)日：2012-01-12

申请号：US13238748

申请日：2011-09-21

申请人： Dong-gun LEE ,  Seong-sue KIM

发明人： Dong-gun LEE ,  Seong-sue KIM

IPC分类号： G03B27/52

CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/84 ,  G21K2201/061

摘要： An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.

摘要翻译： 一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光 在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测 来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr;其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA， ＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。