公开(公告)号：US07223721B2

公开(公告)日：2007-05-29

申请号：US10739203

申请日：2003-12-19

申请人： Dong-jin Park ,  Kyung-dae Kim ,  Sang-mun Chon ,  Jin-ho Hwang ,  Il-hyun Sohn ,  Sang-oh Park ,  Pil-kwon Jun

发明人： Dong-jin Park ,  Kyung-dae Kim ,  Sang-mun Chon ,  Jin-ho Hwang ,  Il-hyun Sohn ,  Sang-oh Park ,  Pil-kwon Jun

IPC分类号： B08B3/04

CPC分类号： C11D1/526 ,  C11D11/0047 ,  G03F7/425

摘要： A resist removing composition having a superior capability for removing a resist, polymer, organometallic polymer and etching by-products such as metal oxide, which does not attack underlying layers exposed to the composition and which does not leave residues after a rinsing step. The resist removing composition contains alkoxy N-hydroxyalkyl alkanamide and a swelling agent.

摘要翻译： 抗蚀剂去除组合物具有优异的去除抗蚀剂，聚合物，有机金属聚合物和蚀刻副产物如金属氧化物的能力，其不会侵蚀暴露于组合物的下面的层，并且在冲洗步骤之后不留下残留物。 抗蚀剂去除组合物含有烷氧基N-羟烷基烷酰胺和溶胀剂。

公开(公告)号：US06713440B2

公开(公告)日：2004-03-30

申请号：US10059150

申请日：2002-01-31

申请人： Dong-jin Park ,  Kyung-dae Kim ,  Sang-mun Chon ,  Jin-ho Hwang ,  Il-hyun Sohn ,  Sang-oh Park ,  Pil-kwon Jun

发明人： Dong-jin Park ,  Kyung-dae Kim ,  Sang-mun Chon ,  Jin-ho Hwang ,  Il-hyun Sohn ,  Sang-oh Park ,  Pil-kwon Jun

IPC分类号： C11D344

CPC分类号： C11D1/526 ,  C11D11/0047 ,  G03F7/425

摘要： A resist removing composition having a superior capability for removing a resist, polymer, organometallic polymer and etching by-products such as metal oxide, which does not attack underlying layers exposed to the composition and which does not leave residues after a rinsing step. The resist removing composition contains alkoxy N-hydroxyalkyl alkanamide and a swelling agent.

公开(公告)号：US07037852B2

公开(公告)日：2006-05-02

申请号：US10384711

申请日：2003-03-11

申请人： Dong-jin Park ,  Jin-sung Kim ,  Pil-kwon Jun ,  Jin-ho Hwang ,  Il-hyun Sohn

发明人： Dong-jin Park ,  Jin-sung Kim ,  Pil-kwon Jun ,  Jin-ho Hwang ,  Il-hyun Sohn

IPC分类号： H01L21/461 ,  B08B6/00 ,  C09K13/00

CPC分类号： H01L21/02071 ,  G03F7/422 ,  G03F7/425 ,  H01L21/31133

摘要： A composition for stripping photoresist, methods of preparing and forming the same, a method of manufacturing a semiconductor device using the composition, and a method of removing a photoresist pattern from an underlying layer using the composition, where the composition may include an ethoxy N-hydroxyalkyl alkanamide represented by the formula, CH3CH2—O—R3—CO—N—R1R2OH, an alkanolamine and a polar material. Raw materials of alkyl alkoxy alkanoate, represented by a chemical formula of R4—O—R3—COOR5, and alkanolamine, represented by a chemical formula of NHR1R2OH, may be mixed to form a mixture, which is stirred and cooled to obtain the composition. The composition may balance exfoliation and dissolution of photoresist patterns, and may potentially eliminate thread-type residues from remaining on a surface of an underlying layer after removing the photoresist patterns.

摘要翻译： 用于剥离光刻胶的组合物，其制备和形成该组合物的方法，使用该组合物制造半导体器件的方法以及使用该组合物从下层除去光致抗蚀剂图案的方法，其中所述组合物可以包括乙氧基N- 由下式表示的羟基烷基链烷酰胺CH 3 3 -OR 3 -CO-NR 1 R＆lt; SUB＆lt; > 2 OH，链烷醇胺和极性材料。 烷基烷氧基链烷酸酯的原料，由化学式R 4 -SOR 3 -COOR 5 N表示，链烷醇胺由化学式 可以将NHR 1 R 2 OH的配方混合以形成混合物，将其搅拌并冷却以获得组合物。 组合物可以平衡光刻胶图案的剥离和溶解，并且可能在去除光致抗蚀剂图案之后可能消除线型残留物残留在下层的表面上。