公开(公告)号：US07223721B2

公开(公告)日：2007-05-29

申请号：US10739203

申请日：2003-12-19

申请人： Dong-jin Park ,  Kyung-dae Kim ,  Sang-mun Chon ,  Jin-ho Hwang ,  Il-hyun Sohn ,  Sang-oh Park ,  Pil-kwon Jun

发明人： Dong-jin Park ,  Kyung-dae Kim ,  Sang-mun Chon ,  Jin-ho Hwang ,  Il-hyun Sohn ,  Sang-oh Park ,  Pil-kwon Jun

IPC分类号： B08B3/04

CPC分类号： C11D1/526 ,  C11D11/0047 ,  G03F7/425

摘要： A resist removing composition having a superior capability for removing a resist, polymer, organometallic polymer and etching by-products such as metal oxide, which does not attack underlying layers exposed to the composition and which does not leave residues after a rinsing step. The resist removing composition contains alkoxy N-hydroxyalkyl alkanamide and a swelling agent.

摘要翻译： 抗蚀剂去除组合物具有优异的去除抗蚀剂，聚合物，有机金属聚合物和蚀刻副产物如金属氧化物的能力，其不会侵蚀暴露于组合物的下面的层，并且在冲洗步骤之后不留下残留物。 抗蚀剂去除组合物含有烷氧基N-羟烷基烷酰胺和溶胀剂。

公开(公告)号：US06713440B2

公开(公告)日：2004-03-30

申请号：US10059150

申请日：2002-01-31

申请人： Dong-jin Park ,  Kyung-dae Kim ,  Sang-mun Chon ,  Jin-ho Hwang ,  Il-hyun Sohn ,  Sang-oh Park ,  Pil-kwon Jun

发明人： Dong-jin Park ,  Kyung-dae Kim ,  Sang-mun Chon ,  Jin-ho Hwang ,  Il-hyun Sohn ,  Sang-oh Park ,  Pil-kwon Jun

IPC分类号： C11D344

CPC分类号： C11D1/526 ,  C11D11/0047 ,  G03F7/425

摘要： A resist removing composition having a superior capability for removing a resist, polymer, organometallic polymer and etching by-products such as metal oxide, which does not attack underlying layers exposed to the composition and which does not leave residues after a rinsing step. The resist removing composition contains alkoxy N-hydroxyalkyl alkanamide and a swelling agent.

公开(公告)号：US06655042B2

公开(公告)日：2003-12-02

申请号：US10060021

申请日：2002-01-29

申请人： Hun-jung Yi ,  Ki-seok Lee ,  Bo-yong Lee ,  Sang-oh Park ,  Pil-kwon Jun ,  Sang-mun Chon ,  Kyung-dae Kim

发明人： Hun-jung Yi ,  Ki-seok Lee ,  Bo-yong Lee ,  Sang-oh Park ,  Pil-kwon Jun ,  Sang-mun Chon ,  Kyung-dae Kim

IPC分类号： F26B300

CPC分类号： H01L21/67034

摘要： A drying system for drying a semiconductor substrate is provided. The drying system includes: a chamber for housing a vapor distributor and a fluid bath, said fluid bath being disposed in a lower portion of the chamber and said distributor being disposed in an upper portion of the chamber for distributing vapor for drying the substrate; and a fluid flow system for supplying fluid flow into said fluid bath for cleaning and drying the substrate and for draining said fluid from the fluid bath, wherein the chamber includes a plurality of exhaust vents disposed at the upper portion for venting the vapor.

摘要翻译： 提供了用于干燥半导体衬底的干燥系统。 所述干燥系统包括：用于容纳蒸汽分配器和流体浴的室，所述流体浴设置在所述室的下部，所述分配器设置在所述室的上部，用于分配用于干燥所述基板的蒸气; 以及流体流动系统，用于将流体流供应到所述流体浴中，以清洁和干燥所述基底并从所述流体浴排出所述流体，其中所述腔室包括设置在所述上​​部的多个排气口，用于排出蒸气。

公开(公告)号：US07037852B2

公开(公告)日：2006-05-02

申请号：US10384711

申请日：2003-03-11

申请人： Dong-jin Park ,  Jin-sung Kim ,  Pil-kwon Jun ,  Jin-ho Hwang ,  Il-hyun Sohn

发明人： Dong-jin Park ,  Jin-sung Kim ,  Pil-kwon Jun ,  Jin-ho Hwang ,  Il-hyun Sohn

IPC分类号： H01L21/461 ,  B08B6/00 ,  C09K13/00

CPC分类号： H01L21/02071 ,  G03F7/422 ,  G03F7/425 ,  H01L21/31133

摘要： A composition for stripping photoresist, methods of preparing and forming the same, a method of manufacturing a semiconductor device using the composition, and a method of removing a photoresist pattern from an underlying layer using the composition, where the composition may include an ethoxy N-hydroxyalkyl alkanamide represented by the formula, CH3CH2—O—R3—CO—N—R1R2OH, an alkanolamine and a polar material. Raw materials of alkyl alkoxy alkanoate, represented by a chemical formula of R4—O—R3—COOR5, and alkanolamine, represented by a chemical formula of NHR1R2OH, may be mixed to form a mixture, which is stirred and cooled to obtain the composition. The composition may balance exfoliation and dissolution of photoresist patterns, and may potentially eliminate thread-type residues from remaining on a surface of an underlying layer after removing the photoresist patterns.

摘要翻译： 用于剥离光刻胶的组合物，其制备和形成该组合物的方法，使用该组合物制造半导体器件的方法以及使用该组合物从下层除去光致抗蚀剂图案的方法，其中所述组合物可以包括乙氧基N- 由下式表示的羟基烷基链烷酰胺CH 3 3 -OR 3 -CO-NR 1 R＆lt; SUB＆lt; > 2 OH，链烷醇胺和极性材料。 烷基烷氧基链烷酸酯的原料，由化学式R 4 -SOR 3 -COOR 5 N表示，链烷醇胺由化学式 可以将NHR 1 R 2 OH的配方混合以形成混合物，将其搅拌并冷却以获得组合物。 组合物可以平衡光刻胶图案的剥离和溶解，并且可能在去除光致抗蚀剂图案之后可能消除线型残留物残留在下层的表面上。

公开(公告)号：US20050227363A1

公开(公告)日：2005-10-13

申请号：US10952510

申请日：2004-09-28

申请人： Dong-won Hwang ,  Pil-kwon Jun ,  Sung-jae Lee ,  Jae-seok Lee ,  Sang-mun Chon ,  In-hoi Doh

发明人： Dong-won Hwang ,  Pil-kwon Jun ,  Sung-jae Lee ,  Jae-seok Lee ,  Sang-mun Chon ,  In-hoi Doh

IPC分类号： H01L21/302 ,  G01N33/00

CPC分类号： H01L21/02057

摘要： Monitoring metal contamination of a rinsing solution may include providing a sample of the rinsing solution, and mixing the sample of the rinsing solution with a monitoring reagent to provide a monitoring mixture. A property of the monitoring mixture that is dependent on a concentration of a metal in the rinsing solution may then be measured. More particularly, the property of the monitoring mixture may be an absorbency of the monitoring mixture with respect to electromagnetic radiation transmitted through the monitoring mixture. Related systems and reagents are also discussed.

摘要翻译： 监测冲洗溶液的金属污染可以包括提供冲洗溶液的样品，并将漂洗溶液的样品与监测试剂混合以提供监测混合物。 然后可以测量依赖于冲洗溶液中的金属浓度的监测混合物的性质。 更具体地，监测混合物的性质可以是监测混合物相对于透过监测混合物的电磁辐射的吸收性。 还讨论了相关系统和试剂。

公开(公告)号：US06207358B1

公开(公告)日：2001-03-27

申请号：US09154781

申请日：1998-09-17

申请人： Mi-sook Jeon ,  Chun-deuk Lee ,  June-ing Gil ,  Pil-kwon Jun

发明人： Mi-sook Jeon ,  Chun-deuk Lee ,  June-ing Gil ,  Pil-kwon Jun

IPC分类号： G03F742

CPC分类号： G03F7/422 ,  G03F7/425

摘要： In the fabrication of semiconductor devices, a method of forming a fine pattern on a semiconductor substrate includes the steps of exposing and developing a photoresist deposited on a film of a semiconductor substrate in order to remove selected portions of the photoresist, etching portions of the film left exposed when the selected portions of the photoresist are removed, and subsequently removing any of the photoresist remaining on the semiconductor substrate with dimethylacetamide, or a combination of monoethanolamine and dimethylsulfoxide. Such stripping solutions are capable of removing photoresists in the Deep-UV group as well as the conventionally used photoresists in the I-line group.

摘要翻译： 在半导体器件的制造中，在半导体衬底上形成精细图案的方法包括以下步骤：将沉积在半导体衬底的膜上的光致抗蚀剂曝光和显影，以除去光致抗蚀剂的选定部分，蚀刻膜的部分 当去除光致抗蚀剂的选定部分时，暴露于左侧，随后用二甲基乙酰胺或单乙醇胺和二甲基亚砜的组合除去保留在半导体衬底上的任何光致抗蚀剂。 这种剥离溶液能够除去深UV组中的光致抗蚀剂以及I线组中常规使用的光致抗蚀剂。

公开(公告)号：US06458518B1

公开(公告)日：2002-10-01

申请号：US10045062

申请日：2002-01-15

申请人： Sang-sik Moon ,  Mi-sook Jeon ,  Pil-kwon Jun ,  June-ing Kil ,  Je-eung Park ,  Sang-mun Chun

发明人： Sang-sik Moon ,  Mi-sook Jeon ,  Pil-kwon Jun ,  June-ing Kil ,  Je-eung Park ,  Sang-mun Chun

IPC分类号： G03F742

CPC分类号： C11D7/5022 ,  C11D11/0047 ,  G03F7/422 ,  H01L21/31133

摘要： A photoresist stripper composition is formed of a mixture of acetone, &ggr;-butyrolactone, and ester solvent. A photoresist stripping method includes spraying the photoresist stripper composition over a substrate while rotating the substrate at a relatively low speed, so as to strip photoresist from the substrate. The rotation of the substrate is stopped for a short period of time, and thereafter the photoresist stripper composition is again sprayed over the substrate while rotating the substrate at a relatively high speed. Then, the substrate is rinsed with pure water.

公开(公告)号：US6100203A

公开(公告)日：2000-08-08

申请号：US116790

申请日：1998-07-16

申请人： Joon-ing Kil ,  Pil-kwon Jun ,  Min-sang Yun ,  Young-hwan Yun ,  Gyu-hwan Kwack ,  Sang-moon Chon

发明人： Joon-ing Kil ,  Pil-kwon Jun ,  Min-sang Yun ,  Young-hwan Yun ,  Gyu-hwan Kwack ,  Sang-moon Chon

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/302

CPC分类号： H01L21/02071 ,  H01L21/02063

摘要： Aqueous cleaning compositions comprise from about 0.01 to about 10 weight percent of hydrogen fluoride; from about 1 to about 10 weight percent of hydrogen peroxide; and from about 0.01 to about 30 weight percent of isopropyl alcohol. Methods of manufacturing microelectronic devices comprise providing electrodes on insulation films on microelectronic substrates; etching the insulation films using the electrodes as etching masks to form an exposed surfaces on the electrodes; cleaning the exposed surfaces with aqueous cleaning compositions comprising from about 0.01 to about 10 weight percent of hydrogen fluoride; from about 1 to about 10 weight percent of hydrogen peroxide; and from about 0.01 to about 30 weight percent of isopropyl alcohol; and forming dielectric films on the exposed surfaces of the electrodes. The cleaning step and the etching step are carried out simultaneously.

摘要翻译： 水性清洁组合物包含约0.01至约10重量％的氟化氢; 约1至约10重量％的过氧化氢; 和约0.01至约30重量％的异丙醇。 制造微电子器件的方法包括在微电子衬底上的绝缘膜上提供电极; 使用电极蚀刻绝缘膜作为蚀刻掩模，以在电极上形成暴露表面; 用包含约0.01至约10重量％氟化氢的水性清洁组合物清洁暴露的表面; 约1至约10重量％的过氧化氢; 和约0.01至约30重量％的异丙醇; 以及在电极的暴露表面上形成电介质膜。 清洗步骤和蚀刻步骤同时进行。

公开(公告)号：US06337174B1

公开(公告)日：2002-01-08

申请号：US09428917

申请日：1999-10-28

申请人： Mi-sook Jeon ,  Chun-deuk Lee ,  June-ing Gil ,  Pil-kwon Jun

发明人： Mi-sook Jeon ,  Chun-deuk Lee ,  June-ing Gil ,  Pil-kwon Jun

IPC分类号： G03C500

CPC分类号： G03F7/426 ,  G03F7/425

摘要： In the fabrication of semiconductor devices, a method of forming a fine pattern on a semiconductor substrate includes the steps of exposing and developing a photoresist deposited on a film of a semiconductor substrate in order to remove selected portions of the photoresist, etching portions of the film left exposed when the selected portions of the photoresist are removed, and subsequently removing any of the photoresist remaining on the semiconductor substrate with dimethylacetamide, or a combination of monoethanolamine and dimethylsulfoxide. Such stripping solutions are capable of removing photoresists in the Deep-UV group as well as the conventionally used photoresists in the I-line group.

摘要翻译： 在半导体器件的制造中，在半导体衬底上形成精细图案的方法包括以下步骤：将沉积在半导体衬底的膜上的光致抗蚀剂曝光和显影，以除去光致抗蚀剂的选定部分，蚀刻膜的部分 当去除光致抗蚀剂的选定部分时，暴露于左侧，随后用二甲基乙酰胺或单乙醇胺和二甲基亚砜的组合除去保留在半导体衬底上的任何光致抗蚀剂。 这种剥离溶液能够除去深UV组中的光致抗蚀剂以及I线组中常规使用的光致抗蚀剂。

公开(公告)号：US5866305A

公开(公告)日：1999-02-02

申请号：US771774

申请日：1996-12-20

申请人： Sang-moon Chon ,  Boo-sup Lee ,  Sung-il Kim ,  Jun-ing Gil ,  Pil-kwon Jun ,  Me-suk Jun

发明人： Sang-moon Chon ,  Boo-sup Lee ,  Sung-il Kim ,  Jun-ing Gil ,  Pil-kwon Jun ,  Me-suk Jun

IPC分类号： G03F7/38 ,  C11D7/26 ,  C11D7/50 ,  G03F7/16 ,  G03F7/32 ,  G03F7/42 ,  H01L21/027 ,  H01L21/306 ,  G03C5/00

CPC分类号： G03F7/168 ,  G03F7/422

摘要： A thinner composition used in a washing process for manufacturing semiconductor devices includes at least ethyl lactate (EL) and ethyl-3-ethoxy propionate (EEP), and preferably, additionally includes Gamma-butyrolactone. The thinner composition has high volatility and low viscosity as well as a sufficient solubility rate for rinsing photoresist on the wafer when spraying the thinner through nozzles. Photoresist at the edge or backside of a wafer can be effectively removed at a sufficiently rapid rate, so that the yield of the semiconductor devices is enhanced. In addition, any remaining photoresist attached to the surface can be completely removed to enable the reuse of the wafer, with resulting economic benefits.

摘要翻译： 用于制造半导体器件的洗涤方法中使用的更薄的组合物至少包括乳酸乙酯（EL）和3-乙氧基丙酸乙酯（EEP），优选还包括γ-丁内酯。 较薄的组合物具有高挥发性和低粘度，以及当通过喷嘴进行稀释剂时，在晶片上冲洗光致抗蚀剂时具有足够的溶解度。 可以以足够快的速率有效地去除在晶片的边缘或背面的光致抗蚀剂，从而提高半导体器件的产量。 此外，可以完全除去附着在表面上的任何剩余光致抗蚀剂，从而可以重新利用晶片，从而带来经济效益。