公开(公告)号：US07311857B2

公开(公告)日：2007-12-25

申请号：US10962508

申请日：2004-10-13

申请人： Yong-Kyun Ko ,  Sang-Mun Chon ,  In-Hoi Doh ,  Pil-Kwon Jun ,  Sang-Mi Lee ,  Kwang-shin Lim ,  Myoung-Ok Han

发明人： Yong-Kyun Ko ,  Sang-Mun Chon ,  In-Hoi Doh ,  Pil-Kwon Jun ,  Sang-Mi Lee ,  Kwang-shin Lim ,  Myoung-Ok Han

IPC分类号： C09K13/04

CPC分类号： C09K13/08 ,  C11D1/008 ,  C11D1/72 ,  C11D3/042 ,  C11D3/046 ,  C11D11/0047 ,  H01L21/31111

摘要： An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

摘要翻译： 示例性的蚀刻组合物包括约0.1至8重量％的氟化氢，约10至25重量％的氟化铵，约0.0001至3重量％的非离子聚合物表面活性剂和水。 在湿蚀刻工艺中使用组合物，可以选择性地除去氧化物层，同时可以有效地钝化包括多晶硅的图案或存储电极。 可以以高蚀刻选择性去除氧化物层，同时最小化对多晶硅层的损伤。

公开(公告)号：US20070172952A1

公开(公告)日：2007-07-26

申请号：US11646142

申请日：2006-12-27

申请人： Jae-Seok Lee ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Mi-Ae Kim

发明人： Jae-Seok Lee ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Mi-Ae Kim

IPC分类号： G01N31/00

CPC分类号： G01N23/2258 ,  Y10T436/108331

摘要： A method of manufacturing a reference sample substrate for analyzing a metal contamination level includes coating an organic silica solution including metal impurities on a semiconductor substrate and forming an oxide layer on the semiconductor substrate by thermally treating the semiconductor substrate having the coated organic silica solution. The metal impurities are substantially uniformly distributed in the oxide layer and the metal impurities are positioned at predetermined portions of the oxide layer.

摘要翻译： 制造用于分析金属污染水平的参考样品基材的方法包括在半导体衬底上涂覆包含金属杂质的有机二氧化硅溶液，并通过热处理具有涂覆的有机二氧化硅溶液的半导体衬底，在半导体衬底上形成氧化物层。 金属杂质基本均匀分布在氧化物层中，金属杂质位于氧化物层的预定部分。

公开(公告)号：US07208454B2

公开(公告)日：2007-04-24

申请号：US10885951

申请日：2004-07-08

申请人： Dong-Jin Park ,  Kyung-Dae Kim ,  Hoi-Sik Chung ,  Pil-Kwon Jun ,  Young-Ho Kim

发明人： Dong-Jin Park ,  Kyung-Dae Kim ,  Hoi-Sik Chung ,  Pil-Kwon Jun ,  Young-Ho Kim

IPC分类号： C11D7/50

CPC分类号： C11D7/06 ,  C11D7/10 ,  C11D7/264 ,  C11D7/32 ,  C11D7/5004 ,  C11D11/0047 ,  Y10S134/902

摘要： A cleaning solution for a cured anti-reflective layer (AFC layer) component and a method of cleaning an anti-reflective layer component by using the same, wherein the cleaning solution comprises about 5–30% by weight of ammonium hydroxide, about 23–70% by weight of an organic solvent and about 10–50% by weight of water. When an organic material is spattered to adjacent equipment during implementing a coating process onto a wafer, the equipment is detached and then is dipped into the cleaning solution. Thereafter, the equipment is rinsed and dried. Cured and non-cured organic materials are advantageously removed. Cured organic materials left for a period of time, particularly anti-reflective layer components are advantageously removed.

摘要翻译： 用于固化的抗反射层（AFC层）组分的清洁溶液和通过使用该清洁溶液清洁抗反射层组分的方法，其中所述清洁溶液包含约5-30重量％的氢氧化铵，约23- 70重量％的有机溶剂和约10-50重量％的水。 当在晶片上实施涂覆工艺期间将有机材料溅射到相邻设备时，将设备分离，然后浸入清洁溶液中。 此后，将设备冲洗干燥。 有机地除去固化和未固化的有机材料。 留下一段时间的固化有机材料，特别是抗反射层组分有利地被去除。

公开(公告)号：US20060260149A1

公开(公告)日：2006-11-23

申请号：US11492591

申请日：2006-07-25

申请人： Pil-Kwon Jun ,  Sang-oh Park ,  Yong-Kyun Ko ,  Hun-Jung Yi

发明人： Pil-Kwon Jun ,  Sang-oh Park ,  Yong-Kyun Ko ,  Hun-Jung Yi

IPC分类号： F26B7/00

CPC分类号： H01L21/67326 ,  B65D25/103 ,  H01L21/67057 ,  Y10S134/902

摘要： A wafer guide includes a horizontal support panel and at least three vertical panels attached on one surface of the support panel. Each of the vertical panels has a vertical body panel and a plurality of protrusions upwardly extended from a top surface of the vertical body panel. Gap regions between the protrusions act as slots for holding wafers. Sidewalls of the slots have a convex shaped profile when viewed from a top view, and bottom surfaces of the slots also have a convex shaped profile when viewed from a cross sectional view that crosses the vertical panels.

公开(公告)号：US20060237033A1

公开(公告)日：2006-10-26

申请号：US11380286

申请日：2006-04-26

申请人： Hun-Jung Yi ,  Yang-Koo Lee ,  Pil-Kwon Jun ,  Sang-Oh Park ,  Jai-Young Woo

发明人： Hun-Jung Yi ,  Yang-Koo Lee ,  Pil-Kwon Jun ,  Sang-Oh Park ,  Jai-Young Woo

IPC分类号： B08B3/00 ,  C23G1/00

CPC分类号： H01L21/02052 ,  B08B3/04 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67126

摘要： In an embodiment, a cleaning apparatus and method can prevent adsorption of nano-size particles by wafers. The apparatus includes a cleaning chamber for filling with a cleaning solution for cleaning an object and a drying chamber disposed over the cleaning chamber for drying the object by supplying drying fluid from an upper part. It also includes a transferring unit for transferring the object by moving it between the cleaning and drying chambers. Further, it includes a moveable exhaust plate disposed between the drying chamber and the cleaning chamber for dividing the two chambers and for exhausting the drying fluid supplied to the drying chamber. The drying fluid flows in a uniform laminar flow in the drying chamber.

摘要翻译： 在一个实施例中，清洁装置和方法可以防止由晶片吸收纳米尺寸的颗粒。 该装置包括用于填充用于清洁物体的清洁溶液的清洁室和设置在清洁室上方的干燥室，用于通过从上部供应干燥流体来干燥物体。 它还包括用于通过在清洁和干燥室之间移动物体来传送物体的转印单元。 此外，其包括设置在干燥室和清洁室之间的可移动排气板，用于分隔两个室并排出供应到干燥室的干燥流体。 干燥流体在干燥室中以均匀的层流流动。

公开(公告)号：US20060154484A1

公开(公告)日：2006-07-13

申请号：US11330803

申请日：2006-01-11

申请人： Dong-Won Hwang ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun ,  Kwang-Shin Lim ,  Sang-Eon Lee

发明人： Dong-Won Hwang ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun ,  Kwang-Shin Lim ,  Sang-Eon Lee

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31133 ,  H01L21/31053

摘要： In one embodiment, a method of removing a low-k layer at a low cost and a method of recycling a wafer using the same, is described. A fluoride treatment is performed on the low-k layer formed on an object using an aqueous hydrogen fluoride solution, and the low-k layer is removed from the object. The Si—O bond in the low-k layer is broken due to an aqueous hydrogen fluoride solution, so that the low-k layer is easily removed from the wafer. Accordingly, the wafer may be recycled at a low cost, thereby improving manufacturing productivity of a semiconductor.

摘要翻译： 在一个实施例中，描述了以低成本去除低k层的方法以及使用其降低晶片的方法。 使用氟化氢水溶液对形成在物体上的低k层进行氟化处理，从物体除去低k层。 低k层中的Si-O键由于氟化氢水溶液而破裂，使得低k层容易从晶片上去除。 因此，可以以低成本回收晶片，从而提高半导体的制造生产率。

公开(公告)号：US06905570B2

公开(公告)日：2005-06-14

申请号：US10627565

申请日：2003-07-24

申请人： Kwang-Shin Lim ,  Pil-Kwon Jun ,  Hun-Jung Yi ,  Sang-Oh Park ,  Yong-Kyun Ko

发明人： Kwang-Shin Lim ,  Pil-Kwon Jun ,  Hun-Jung Yi ,  Sang-Oh Park ,  Yong-Kyun Ko

IPC分类号： B65G49/04 ,  B65G49/07 ,  H01L21/304 ,  H01L21/673 ,  H01L21/677 ,  H01L21/687 ,  B08B7/02 ,  H01L21/22

CPC分类号： H01L21/67313 ,  H01L21/67326 ,  H01L21/68707

摘要： An apparatus includes a chamber for containing a fluid, a guide seated in the chamber, and a transfer robot for loading and/or unloading a plurality of wafers to and/or from the guide. The wafers are located on the guide. The guide has a supporting member for supporting a wafer and a stopper member for preventing the wafer from being inclined over a predetermined range. The stopper member is in contact with a wafer edge disposed at a higher position than a wafer edge supported by the supporting member. A wafer guide has a stopper member to prevent adjacent wafers from being inclined and coming in contact with each other. Therefore, it is possible to suppress a poor drying such as water spots (or watermarks) produced when wafers are adhered to each other in a drying process.

摘要翻译： 一种装置包括用于容纳流体的腔室，位于腔室中的导向器和用于将多个晶片装载和/或从该引导件卸载的传送机器人。 晶片位于导轨上。 引导件具有用于支撑晶片的支撑构件和用于防止晶片倾斜超过预定范围的止动构件。 止动构件与设置在比由支撑构件支撑的晶片边缘更高的位置处的晶片边缘接触。 晶片引导件具有阻止相邻晶片倾斜并彼此接触的止动件。 因此，可以抑制在干燥过程中晶片彼此粘附时产生的水斑（或水印）等干燥不良。

公开(公告)号：US06883248B2

公开(公告)日：2005-04-26

申请号：US10635458

申请日：2003-08-07

申请人： Yong-Kyun Ko ,  Jae-Jun Ryu ,  Hun-Jung Yi ,  Pil-Kwon Jun

发明人： Yong-Kyun Ko ,  Jae-Jun Ryu ,  Hun-Jung Yi ,  Pil-Kwon Jun

IPC分类号： H01L21/304 ,  H01L21/00 ,  F26B21/06

CPC分类号： H01L21/67034

摘要： An apparatus for drying a substrate using an isopropyl alcohol vapor includes a container for receiving an isopropyl alcohol vapor to dry a plurality of substrates wherein an opening is vertically formed through an upper portion of the container to permit the loading and unloading of the substrates; a supporting member for supporting the plurality of substrates in the container in a vertical direction and for supporting the substrates side by side in a horizontal direction, wherein the supporting member extends through the container and through the opening; and a cover for obstructing a flow of clean air from flowing directly from an air cleaner disposed over the container into the container through the opening. In addition, the apparatus may include an inert gas supplying member to supply an inert gas onto the substrates to prevent native oxide films from forming on the substrates.

摘要翻译： 使用异丙醇蒸气干燥基材的装置包括：用于接收异丙醇蒸气以干燥多个基板的容器，其中通过容器的上部垂直形成开口以允许基板的装载和卸载; 支撑部件，用于在垂直方向上支撑容器中的多个基板，并且用于在水平方向上并排地支撑基板，其中支撑部件延伸穿过容器并穿过开口; 以及用于阻挡清洁空气的流动的盖子，其通过开口直接从设置在容器上的空气滤清器流入容器。 此外，该装置可以包括惰性气体供应构件，以在衬底上提供惰性气体，以防止在衬底上形成自然氧化膜。

公开(公告)号：US20050081883A1

公开(公告)日：2005-04-21

申请号：US10962508

申请日：2004-10-13

申请人： Yong-Kyun Ko ,  Sang-Mun Chon ,  In-Hoi Doh ,  Pil-Kwon Jun ,  Sang-Mi Lee ,  Kwang-shin Lim ,  Myoung-Ok Han

发明人： Yong-Kyun Ko ,  Sang-Mun Chon ,  In-Hoi Doh ,  Pil-Kwon Jun ,  Sang-Mi Lee ,  Kwang-shin Lim ,  Myoung-Ok Han

IPC分类号： C08K13/08 ,  B08B3/08 ,  C09K13/08 ,  C11D1/00 ,  C11D1/72 ,  C11D3/02 ,  C11D11/00 ,  C23F1/16 ,  C23F1/24 ,  H01L21/308 ,  H01L21/311 ,  H01L21/8242 ,  H01L27/108

CPC分类号： C09K13/08 ,  C11D1/008 ,  C11D1/72 ,  C11D3/042 ,  C11D3/046 ,  C11D11/0047 ,  H01L21/31111

摘要： An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

摘要翻译： 示例性的蚀刻组合物包括约0.1至8重量％的氟化氢，约10至25重量％的氟化铵，约0.0001至3重量％的非离子聚合物表面活性剂和水。 在湿蚀刻工艺中使用组合物，可以选择性地除去氧化物层，同时可以有效地钝化包括多晶硅的图案或存储电极。 可以以高蚀刻选择性去除氧化物层，同时最小化对多晶硅层的损伤。

公开(公告)号：US06655042B2

公开(公告)日：2003-12-02

申请号：US10060021

申请日：2002-01-29

申请人： Hun-jung Yi ,  Ki-seok Lee ,  Bo-yong Lee ,  Sang-oh Park ,  Pil-kwon Jun ,  Sang-mun Chon ,  Kyung-dae Kim

发明人： Hun-jung Yi ,  Ki-seok Lee ,  Bo-yong Lee ,  Sang-oh Park ,  Pil-kwon Jun ,  Sang-mun Chon ,  Kyung-dae Kim

IPC分类号： F26B300

CPC分类号： H01L21/67034

摘要： A drying system for drying a semiconductor substrate is provided. The drying system includes: a chamber for housing a vapor distributor and a fluid bath, said fluid bath being disposed in a lower portion of the chamber and said distributor being disposed in an upper portion of the chamber for distributing vapor for drying the substrate; and a fluid flow system for supplying fluid flow into said fluid bath for cleaning and drying the substrate and for draining said fluid from the fluid bath, wherein the chamber includes a plurality of exhaust vents disposed at the upper portion for venting the vapor.

摘要翻译： 提供了用于干燥半导体衬底的干燥系统。 所述干燥系统包括：用于容纳蒸汽分配器和流体浴的室，所述流体浴设置在所述室的下部，所述分配器设置在所述室的上部，用于分配用于干燥所述基板的蒸气; 以及流体流动系统，用于将流体流供应到所述流体浴中，以清洁和干燥所述基底并从所述流体浴排出所述流体，其中所述腔室包括设置在所述上​​部的多个排气口，用于排出蒸气。