公开(公告)号：US07553682B2

公开(公告)日：2009-06-30

申请号：US11584591

申请日：2006-10-23

申请人： Doo Go Baik ,  Bang Won Oh ,  Nam Seung Kim

发明人： Doo Go Baik ,  Bang Won Oh ,  Nam Seung Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079

摘要： According to a method of manufacturing a vertical nitride light emitting device, a first conductivity type nitride layer, an active layer and a second conductivity type nitride layer are sequentially grown on a preliminary growth substrate to form a light emission structure. The light emission structure is cut according to a final size of light emitting devices, leaving a predetermined thickness of the first conductivity type nitride layer intact. A permanent conductive substrate is provided on the light emission structure and the preliminary substrate is diced into a plurality of units. Laser beam is irradiated to detach the preliminary substrate, thereby separating the light emission structure according to the size of the light emitting devices. First and second contacts are formed on the first conductivity type nitride layer and the permanent conductive substrate, respectively. The permanent conductive substrate is diced to complete individual light emitting devices.

摘要翻译： 根据制造垂直氮化物发光器件的方法，在预备生长衬底上依次生长第一导电型氮化物层，有源层和第二导电型氮化物层，以形成发光结构。 根据发光器件的最终尺寸切割发光结构，留下第一导电型氮化物层的预定厚度。 在发光结构上设置永久导电基板，将预备基板切割成多个单元。 照射激光束以分离初始衬底，从而根据发光器件的尺寸分离发光结构。 第一和第二触点分别形成在第一导电型氮化物层和永久导电基板上。 切割永久导电基板以完成各个发光器件。