公开(公告)号：US07553682B2

公开(公告)日：2009-06-30

申请号：US11584591

申请日：2006-10-23

申请人： Doo Go Baik ,  Bang Won Oh ,  Nam Seung Kim

发明人： Doo Go Baik ,  Bang Won Oh ,  Nam Seung Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079

摘要： According to a method of manufacturing a vertical nitride light emitting device, a first conductivity type nitride layer, an active layer and a second conductivity type nitride layer are sequentially grown on a preliminary growth substrate to form a light emission structure. The light emission structure is cut according to a final size of light emitting devices, leaving a predetermined thickness of the first conductivity type nitride layer intact. A permanent conductive substrate is provided on the light emission structure and the preliminary substrate is diced into a plurality of units. Laser beam is irradiated to detach the preliminary substrate, thereby separating the light emission structure according to the size of the light emitting devices. First and second contacts are formed on the first conductivity type nitride layer and the permanent conductive substrate, respectively. The permanent conductive substrate is diced to complete individual light emitting devices.

摘要翻译： 根据制造垂直氮化物发光器件的方法，在预备生长衬底上依次生长第一导电型氮化物层，有源层和第二导电型氮化物层，以形成发光结构。 根据发光器件的最终尺寸切割发光结构，留下第一导电型氮化物层的预定厚度。 在发光结构上设置永久导电基板，将预备基板切割成多个单元。 照射激光束以分离初始衬底，从而根据发光器件的尺寸分离发光结构。 第一和第二触点分别形成在第一导电型氮化物层和永久导电基板上。 切割永久导电基板以完成各个发光器件。

公开(公告)号：US07906785B2

公开(公告)日：2011-03-15

申请号：US11585212

申请日：2006-10-24

申请人： Doo Go Baik ,  Bang Won Oh ,  Tae Jun Kim

发明人： Doo Go Baik ,  Bang Won Oh ,  Tae Jun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/145 ,  H01L33/0033 ,  H01L33/32

摘要： A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.

摘要翻译： 提供了一种垂直氮化物半导体发光器件及其制造方法。 在该器件中，在导电性基板上依次形成欧姆接触层，p型氮化物半导体层，有源层，n型氮化物半导体层和n电极。 接触欧姆接触层的p型氮化物半导体层的表面和与n电极接触的n型氮化物层的表面中的至少一个在其基本中心部分具有高的受损氮化物单晶的电阻面积 。 高电阻区域具有与欧姆接触层和n电极中的至少一个的肖特基结。

公开(公告)号：US07119375B2

公开(公告)日：2006-10-10

申请号：US11012331

申请日：2004-12-16

申请人： Doo Go Baik ,  Bang Won Oh ,  Hak Kyu Kim

发明人： Doo Go Baik ,  Bang Won Oh ,  Hak Kyu Kim

IPC分类号： H01L29/22

CPC分类号： H01L33/46 ,  H01L33/0079

摘要： A light emitting diode (LED) includes a substrate, a first conductive clad layer formed on the substrate, an active layer formed on the first conductive clad layer, a second conductive clad layer formed on the active layer, an alumina (Al2O3) layer formed on the lower surface of the substrate, and an aluminum layer formed on the lower surface of the alumina (Al2O3) layer. The substrate may be removed, and the aluminum layer and the alumina layer are formed directly on the lower surface of the first conductive clad layer.

摘要翻译： 发光二极管（LED）包括基板，形成在基板上的第一导电覆层，形成在第一导电覆层上的有源层，形成在有源层上的第二导电覆层，氧化铝 形成在基材的下表面上的铝层和形成在氧化铝的下表面上的铝层（Al 2 O 3 > 3 ）层。 可以除去衬底，并且铝层和氧化铝层直接形成在第一导电覆层的下表面上。

公开(公告)号：US07695989B2

公开(公告)日：2010-04-13

申请号：US12406540

申请日：2009-03-18

申请人： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

发明人： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/32

摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.

摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。 垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

公开(公告)号：US08012779B2

公开(公告)日：2011-09-06

申请号：US11878360

申请日：2007-07-24

申请人： Seok Beom Choi ,  Bang Won Oh ,  Jong Gun Woo ,  Doo Go Baik

发明人： Seok Beom Choi ,  Bang Won Oh ,  Jong Gun Woo ,  Doo Go Baik

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/02 ,  H01L33/22

摘要： A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

摘要翻译： 垂直GaN基LED包括n电极; 形成在n电极下面的n型GaN层，所述n型GaN层具有不规则表面结构，所述n型GaN层包括具有以均匀间隔形成的凹凸的第一不规则表面结构和具有不规则形状的第二不规则表面结构 第二不规则表面结构形成在第一不规则表面结构上; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

公开(公告)号：US07872276B2

公开(公告)日：2011-01-18

申请号：US11742818

申请日：2007-05-01

申请人： Su Yeol Lee ,  Bang Won Oh ,  Doo Go Baik ,  Tae Sung Jang ,  Jong Gun Woo ,  Seok Beom Choi ,  Sang Ho Yoon ,  Dong Woo Kim ,  In Tae Yeo

发明人： Su Yeol Lee ,  Bang Won Oh ,  Doo Go Baik ,  Tae Sung Jang ,  Jong Gun Woo ,  Seok Beom Choi ,  Sang Ho Yoon ,  Dong Woo Kim ,  In Tae Yeo

IPC分类号： H01L33/00

CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

摘要翻译： 制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

公开(公告)号：US20070145391A1

公开(公告)日：2007-06-28

申请号：US11585212

申请日：2006-10-24

申请人： Doo Go Baik ,  Bang Won Oh ,  Tae Jun Kim

发明人： Doo Go Baik ,  Bang Won Oh ,  Tae Jun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/145 ,  H01L33/0033 ,  H01L33/32

摘要： A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.

摘要翻译： 提供了一种垂直氮化物半导体发光器件及其制造方法。 在该器件中，在导电性基板上依次形成欧姆接触层，p型氮化物半导体层，有源层，n型氮化物半导体层和n电极。 接触欧姆接触层的p型氮化物半导体层的表面和与n电极接触的n型氮化物层的表面中的至少一个在其基本中心部分具有高的受损氮化物单晶的电阻面积 。 高电阻区域具有与欧姆接触层和n电极中的至少一个的肖特基结。

公开(公告)号：US07573076B2

公开(公告)日：2009-08-11

申请号：US11634112

申请日：2006-12-06

申请人： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

发明人： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/32

摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.

摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。 垂直GaN基LED包括：支承层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

公开(公告)号：US08178378B2

公开(公告)日：2012-05-15

申请号：US12909204

申请日：2010-10-21

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L21/56

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US07838317B2

公开(公告)日：2010-11-23

申请号：US12544868

申请日：2009-08-20

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L21/56

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。