公开(公告)号：US09768163B2

公开(公告)日：2017-09-19

申请号：US14744722

申请日：2015-06-19

申请人： Doo-Young Lee ,  Sang-Hyun Lee ,  Myung-Hoon Jung ,  Do-Hyoung Kim

发明人： Doo-Young Lee ,  Sang-Hyun Lee ,  Myung-Hoon Jung ,  Do-Hyoung Kim

IPC分类号： H01L27/088 ,  H01L29/45 ,  H01L21/768 ,  H01L21/28 ,  H01L29/417 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/11

CPC分类号： H01L27/088 ,  H01L21/28114 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/41758 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/78

摘要： A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern having a first height and the second gate pattern having a second height, an insulating pattern on the substrate covering the first and second gate patterns, the insulating pattern including a trench exposing the substrate between the first and second gate patterns, a spacer contacting at least a portion of a sidewall of the insulating pattern within the trench, the spacer spaced apart from the first and second gate patterns and having a third height larger than the first and second heights, and a contact structure filling the trench.

公开(公告)号：US08927355B2

公开(公告)日：2015-01-06

申请号：US13304936

申请日：2011-11-28

申请人： Doo-Young Lee ,  Ki Il Kim ,  Myeong-Cheol Kim ,  Do-Hyoung Kim ,  Do-Hsing Lee

发明人： Doo-Young Lee ,  Ki Il Kim ,  Myeong-Cheol Kim ,  Do-Hyoung Kim ,  Do-Hsing Lee

IPC分类号： H01L21/339 ,  H01L21/768 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/78 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/66545

摘要： A method of manufacturing a semiconductor device, including the second sacrificial layer receiving a gate structure include a metal and a spacer on a sidewall of the gate structure therethrough being formed on a substrate. The second sacrificial layer is removed. A second etch stop layer and an insulating interlayer are sequentially formed on the gate structure, the spacer and the substrate. An opening passing through the insulating interlayer is formed to expose a portion of the gate structure, a portion of the spacer and a portion of the second etch stop layer on a portion of the substrate. The second etch stop layer being exposed through the opening is removed. The contact being electrically connected to the gate structure and the substrate and filling the opening is formed. The semiconductor device having the metal gate electrode and the shared contact has a desired leakage current characteristic and resistivity characteristics.

摘要翻译： 包括接收栅极结构的第二牺牲层的半导体器件的制造方法包括在基板上形成的栅极结构的侧壁上的金属和间隔物。 去除第二牺牲层。 在栅极结构，间隔物和衬底上依次形成第二蚀刻停止层和绝缘中间层。 形成通过绝缘中间层的开口以暴露栅极结构的一部分，间隔物的一部分和第二蚀刻停止层的一部分在衬底的一部分上。 去除通过开口露出的第二蚀刻停止层。 形成与栅极结构和基板电连接并填充开口的触点。 具有金属栅电极和共用触点的半导体器件具有期望的漏电流特性和电阻率特性。

公开(公告)号：US20080001610A1

公开(公告)日：2008-01-03

申请号：US11464675

申请日：2006-08-15

申请人： Yong-Chae Bae ,  Hee-Soo Kim ,  Hyun Lee ,  Yeon-Whan Kim ,  Doo-Young Lee

发明人： Yong-Chae Bae ,  Hee-Soo Kim ,  Hyun Lee ,  Yeon-Whan Kim ,  Doo-Young Lee

IPC分类号： G01R27/26

CPC分类号： G01N27/223

摘要： Apparatus and method of water absorption for generator stator winding insulator using a cross capacitance are disclosed. The apparatus includes a sensor using a cross capacitance, and a water absorption testing unit for carrying out the water absorption test of the insulator of the stator winding of the power generator using the sensor. The apparatus determines whether the insulator absorbs water, according to thickness, using the cross capacitance, such that inferior winding is detected, a power plant is prevented from being suddenly stopped, costs for the maintenance are reduced, and the lifespan of the power generator is extended.

摘要翻译： 公开了使用交叉电容的发电机定子绕组绝缘体的吸水装置和方法。 该装置包括使用交叉电容的传感器和用于使用该传感器执行发电机的定子绕组的绝缘体的吸水试验的吸水试验单元。 该装置根据厚度，使用交叉电容来测定绝缘体是否吸收水，使得检测到差的绕组，防止发电厂突然停止，维护成本降低，并且发电机的寿命为 延长

公开(公告)号：US07312117B2

公开(公告)日：2007-12-25

申请号：US11193788

申请日：2005-07-28

申请人： Doo-Young Lee ,  Yoo-Chul Kong ,  Jong-Chul Park ,  Sang-Sup Jeong

发明人： Doo-Young Lee ,  Yoo-Chul Kong ,  Jong-Chul Park ,  Sang-Sup Jeong

IPC分类号： H01L21/8242

CPC分类号： H01L28/91 ,  H01L21/76838 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885

摘要： A semiconductor device includes a word line structure that extends in a first direction on an active region defined on a substrate. First and second contact pads are formed on the active region at both sides of the word line structure. Bit line structures are electrically connected to the first contact pad and extend in a second direction substantially perpendicular to the first direction. An insulation layer structure is formed on the substrate having the bit line structures. A storage node contact plug is electrically connected to the second contact pad through the insulation layer structure. A storage node electrode, which may be part of a capacitor, is formed on the storage node contact plug. The storage node contact plug has a lower portion and an upper portion having a width wider than that of the lower portion, with vertical sides perpendicular to the first and second directions.

摘要翻译： 半导体器件包括在限定在衬底上的有源区上沿第一方向延伸的字线结构。 第一和第二接触垫形成在字线结构两侧的有源区上。 位线结构电连接到第一接触焊盘并沿基本垂直于第一方向的第二方向延伸。 在具有位线结构的基板上形成绝缘层结构。 存储节点接触插头通过绝缘层结构电连接到第二接触垫。 作为电容器的一部分的存储节点电极形成在存储节点接触插头上。 存储节点接触插头具有下部和具有比下部的宽度宽的上部，其垂直方向垂直于第一和第二方向。

公开(公告)号：US20060022256A1

公开(公告)日：2006-02-02

申请号：US11193788

申请日：2005-07-28

申请人： Doo-Young Lee ,  Yoo-Chul Kong ,  Jong-Chul Park ,  Sang-Sup Jeong

发明人： Doo-Young Lee ,  Yoo-Chul Kong ,  Jong-Chul Park ,  Sang-Sup Jeong

IPC分类号： H01L29/788

CPC分类号： H01L28/91 ,  H01L21/76838 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885

摘要： A semiconductor device includes a word line structure that extends in a first direction on an active region defined on a substrate. First and second contact pads are formed on the active region at both sides of the word line structure. Bit line structures are electrically connected to the first contact pad and extend in a second direction substantially perpendicular to the first direction. An insulation layer structure is formed on the substrate having the bit line structures. A storage node contact plug is electrically connected to the second contact pad through the insulation layer structure. A storage node electrode, which may be part of a capacitor, is formed on the storage node contact plug. The storage node contact plug has a lower portion and an upper portion having a width wider than that of the lower portion, with vertical sides perpendicular to the first and second directions.

摘要翻译： 半导体器件包括在限定在衬底上的有源区上沿第一方向延伸的字线结构。 第一和第二接触垫形成在字线结构两侧的有源区上。 位线结构电连接到第一接触焊盘并沿基本垂直于第一方向的第二方向延伸。 在具有位线结构的基板上形成绝缘层结构。 存储节点接触插头通过绝缘层结构电连接到第二接触垫。 作为电容器的一部分的存储节点电极形成在存储节点接触插头上。 存储节点接触插头具有下部部分和具有比下部部分宽的宽度的上部部分，垂直方向垂直于第一和第二方向。

公开(公告)号：US07602194B2

公开(公告)日：2009-10-13

申请号：US12141264

申请日：2008-06-18

申请人： Yong-Chae Bae ,  Hee-Soo Kim ,  Hyun Lee ,  Doo-Young Lee ,  Wook Ryun Lee

发明人： Yong-Chae Bae ,  Hee-Soo Kim ,  Hyun Lee ,  Doo-Young Lee ,  Wook Ryun Lee

IPC分类号： G01R27/26

CPC分类号： G01N27/223

摘要： A method of water absorption for a generator stator winding insulator using a cross capacitance involves detecting a state of the insulator of the stator winding of the generator using a theory of the cross capacitance, and carrying out the water absorption test of the insulator of the stator winding of the power generator using the detected state in the detecting.

摘要翻译： 使用交叉电容的发电机定子绕组绝缘体的吸水方法涉及使用交叉电容理论来检测发电机的定子绕组的绝缘体的状态，并且执行定子的绝缘体的吸水试验 在检测中使用检测到的状态的发电机的绕组。

公开(公告)号：US08486787B2

公开(公告)日：2013-07-16

申请号：US13075334

申请日：2011-03-30

申请人： Nam-Gun Kim ,  Sung-Il Cho ,  Yoon-Jae Kim ,  Doo-Young Lee

发明人： Nam-Gun Kim ,  Sung-Il Cho ,  Yoon-Jae Kim ,  Doo-Young Lee

IPC分类号： H01L21/00

CPC分类号： H01L21/76816 ,  H01L21/31144 ,  H01L21/76897 ,  H01L27/10888 ,  H01L27/10894

摘要： A method of fabricating a semiconductor device includes forming a first contact opening having a relatively larger depth than a second contact opening to expose first and second contacts through an insulation layer, where the first and second contacts are located at different depths with respect to an upper surface of the insulation layer. Therefore, it is possible to prevent excessive over-etch of the second contact opening and minimize etching damage to the contact region exposed by the second contact opening.

摘要翻译： 制造半导体器件的方法包括形成具有比第二接触开口更大的深度的第一接触开口，以通过绝缘层暴露第一和第二接触，其中第一和第二接触件相对于上部 绝缘层表面。 因此，可以防止第二接触开口的过度的过度蚀刻，并使对由第二接触开口露出的接触区域的蚀刻损伤最小化。

公开(公告)号：US20110256719A1

公开(公告)日：2011-10-20

申请号：US13075334

申请日：2011-03-30

申请人： Nam-Gun Kim ,  Sung-Il Cho ,  Yoon-Jae Kim ,  Doo-Young Lee

发明人： Nam-Gun Kim ,  Sung-Il Cho ,  Yoon-Jae Kim ,  Doo-Young Lee

IPC分类号： H01L21/28

CPC分类号： H01L21/76816 ,  H01L21/31144 ,  H01L21/76897 ,  H01L27/10888 ,  H01L27/10894

摘要： A method of fabricating a semiconductor device includes forming a first contact opening having a relatively larger depth than a second contact opening to expose first and second contacts through an insulation layer, where the first and second contacts are located at different depths with respect to an upper surface of the insulation layer. Therefore, it is possible to prevent excessive over-etch of the second contact opening and minimize etching damage to the contact region exposed by the second contact opening.

摘要翻译： 制造半导体器件的方法包括形成具有比第二接触开口更大的深度的第一接触开口，以通过绝缘层暴露第一和第二接触，其中第一和第二接触件相对于上部 绝缘层表面。 因此，可以防止第二接触开口的过度的过度蚀刻，并使对由第二接触开口露出的接触区域的蚀刻损伤最小化。

公开(公告)号：US20080309352A1

公开(公告)日：2008-12-18

申请号：US12141264

申请日：2008-06-18

申请人： Yong-Chae BAE ,  Hee-Soo Kim ,  Hyun Lee ,  Doo-Young Lee ,  Wook Ryun Lee

发明人： Yong-Chae BAE ,  Hee-Soo Kim ,  Hyun Lee ,  Doo-Young Lee ,  Wook Ryun Lee

IPC分类号： G01N27/24

CPC分类号： G01N27/223

摘要： A method of water absorption for a generator stator winding insulator using a cross capacitance involves detecting a state of the insulator of the stator winding of the generator using a theory of the cross capacitance, and carrying out the water absorption test of the insulator of the stator winding of the power generator using the detected state in the detecting.

摘要翻译： 使用交叉电容的发电机定子绕组绝缘体的吸水方法涉及使用交叉电容理论来检测发电机的定子绕组的绝缘体的状态，并且执行定子的绝缘体的吸水试验 在检测中使用检测到的状态的发电机的绕组。

公开(公告)号：US07403019B2

公开(公告)日：2008-07-22

申请号：US11464675

申请日：2006-08-15

申请人： Yong-Chae Bae ,  Hee-Soo Kim ,  Hyun Lee ,  Yeon-Whan Kim ,  Doo-Young Lee

发明人： Yong-Chae Bae ,  Hee-Soo Kim ,  Hyun Lee ,  Yeon-Whan Kim ,  Doo-Young Lee

IPC分类号： G01R27/00

CPC分类号： G01N27/223

摘要： Apparatus and method of water absorption for generator stator winding insulator using a cross capacitance are disclosed. The apparatus includes a sensor using a cross capacitance, and a water absorption testing unit for carrying out the water absorption test of the insulator of the stator winding of the power generator using the sensor. The apparatus determines whether the insulator absorbs water, according to thickness, using the cross capacitance, such that inferior winding is detected, a power plant is prevented from being suddenly stopped, costs for the maintenance are reduced, and the lifespan of the power generator is extended.

摘要翻译： 公开了使用交叉电容的发电机定子绕组绝缘体的吸水装置和方法。 该装置包括使用交叉电容的传感器和用于使用该传感器执行发电机的定子绕组的绝缘体的吸水试验的吸水试验单元。 该装置根据厚度，使用交叉电容来测定绝缘体是否吸收水，使得检测到差的绕组，防止发电厂突然停止，维护成本降低，并且发电机的寿命为 延长