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    CMOS IMAGE SENSORS
    1.
    发明申请
    CMOS IMAGE SENSORS 失效
    CMOS图像传感器

    公开(公告)号：US20080185621A1

    公开(公告)日：2008-08-07

    申请号：US12062552

    申请日：2008-04-04

    申请人： Duk-Min YI ,  Jong-Chae KIM ,  Jin-Hyeong PARK

    发明人： Duk-Min YI ,  Jong-Chae KIM ,  Jin-Hyeong PARK

    IPC分类号： H01L27/146

    CPC分类号： H04N5/357 ,  H01L27/14609

    摘要： A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.

    摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器包括响应于其上的入射光而产生电荷的光电二极管区域。 CMOS图像传感器还包括第一浮动扩散层，其适于响应于全局转移信号从光电二极管区域接收电荷，以及第二浮动扩散区域，其适于响应于第一浮动扩散区域接收来自第一浮动扩散区域的电荷 像素选择信号。

    IMAGE SENSOR AND METHOD FOR FORMING THE SAME
    2.
    发明申请
    IMAGE SENSOR AND METHOD FOR FORMING THE SAME 失效
    图像传感器及其形成方法

    公开(公告)号：US20100120190A1

    公开(公告)日：2010-05-13

    申请号：US12692133

    申请日：2010-01-22

    申请人： Duk-Min YI ,  Sung-Keun WON ,  Jun-Yeoul YOU

    发明人： Duk-Min YI ,  Sung-Keun WON ,  Jun-Yeoul YOU

    IPC分类号： H01L31/18

    CPC分类号： H01L27/14687 ,  H01L27/14609 ,  H01L27/14689

    摘要： A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is electrically connected to the photo-detective device for outputting charges stored in the photo-detective device. A transistor directly connected to the photo-detective device includes a gate electrode pattern and an ion-implantation interrupting pattern arranged on the gate electrode pattern. Since the ion-implantation interrupting pattern is located on an upper portion of the gate electrode pattern of the transistor in the vicinity of the photo-detective device, a threshold voltage of the gate electrode pattern of the transistor in the vicinity of the photo-detective device is adjusted to a desired value.

    摘要翻译： 提供了可靠的图像传感器及其形成方法。 图像传感器包括光检测装置。 至少一个晶体管电连接到光检测器件，用于输出存储在光检测器件中的电荷。 直接连接到光检测器件的晶体管包括布置在栅极电极图案上的栅电极图案和离子注入中断图案。 由于离子注入断线图案位于光检测装置附近的晶体管的栅电极图案的上部，所以在光检测附近的晶体管的栅电极图案的阈值电压 设备被调整到所需的值。