公开(公告)号：US07875488B2

公开(公告)日：2011-01-25

申请号：US11882155

申请日：2007-07-31

申请人： Jong-Wook Hong ,  Tae-Seok Oh ,  Duk-Min Yi ,  Young-Mook Oh ,  Won-Je Park

发明人： Jong-Wook Hong ,  Tae-Seok Oh ,  Duk-Min Yi ,  Young-Mook Oh ,  Won-Je Park

IPC分类号： H01L21/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14687

摘要： A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.

摘要翻译： 根据示例性实施例的制造图像传感器的方法可以包括在衬底的光电转换区域中形成光电二极管，并在衬底上形成蚀刻停止层。 蚀刻停止层可以被图案化以在光电转换区域上形成内透镜，并且在衬底的晶体管区域上形成蚀刻停止层图案。 可以在内透镜和蚀刻停止层图案上形成金属互连结构。 因此，可以减少用于制造图像传感器的附加处理的数量。

公开(公告)号：US07612392B2

公开(公告)日：2009-11-03

申请号：US11528409

申请日：2006-09-28

申请人： Sang-Il Jung ,  Duk-Min Yi

发明人： Sang-Il Jung ,  Duk-Min Yi

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/14603

摘要： Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor substrate. The charge transfer structure may include a gate insulating film that may be formed on a channel region in the semiconductor substrate between a photoelectric conversion region and charge detection region, and a transfer gate electrode that may be formed on the gate insulating film that may have a region doped with a first conductivity type impurity-doped region and a second conductivity type impurity-doped region which may be adjacent to each other.

摘要翻译： 示例性实施例涉及图像传感器及其制造方法。 图像传感器可以包括半导体衬底。 电荷转移结构可以形成在半导体衬底上。 电荷转移结构可以包括可以形成在半导体衬底中的光电转换区域和电荷检测区域之间的沟道区域上的栅极绝缘膜，以及可以形成在栅极绝缘膜上的传输栅极电极，该栅极绝缘膜可以具有 掺杂有可以彼此相邻的第一导电类型杂质掺杂区域和第二导电类型杂质掺杂区域的区域。

公开(公告)号：US20080185621A1

公开(公告)日：2008-08-07

申请号：US12062552

申请日：2008-04-04

申请人： Duk-Min YI ,  Jong-Chae KIM ,  Jin-Hyeong PARK

发明人： Duk-Min YI ,  Jong-Chae KIM ,  Jin-Hyeong PARK

IPC分类号： H01L27/146

CPC分类号： H04N5/357 ,  H01L27/14609

摘要： A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.

摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器包括响应于其上的入射光而产生电荷的光电二极管区域。 CMOS图像传感器还包括第一浮动扩散层，其适于响应于全局转移信号从光电二极管区域接收电荷，以及第二浮动扩散区域，其适于响应于第一浮动扩散区域接收来自第一浮动扩散区域的电荷 像素选择信号。

公开(公告)号：US07378694B2

公开(公告)日：2008-05-27

申请号：US11284883

申请日：2005-11-23

申请人： Duk-Min Yi ,  Jong-Chae Kim ,  Jin-Hyeong Park

发明人： Duk-Min Yi ,  Jong-Chae Kim ,  Jin-Hyeong Park

IPC分类号： H01L31/062

CPC分类号： H04N5/357 ,  H01L27/14609

摘要： A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.

摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器包括响应于其上的入射光而产生电荷的光电二极管区域。 CMOS图像传感器还包括第一浮动扩散层，其适于响应于全局转移信号从光电二极管区域接收电荷，以及第二浮动扩散区域，其适于响应于第一浮动扩散区域接收来自第一浮动扩散区域的电荷 像素选择信号。

公开(公告)号：US20060054946A1

公开(公告)日：2006-03-16

申请号：US11207759

申请日：2005-08-22

申请人： Hyoun-Min Baek ,  Duk-Min Yi

发明人： Hyoun-Min Baek ,  Duk-Min Yi

IPC分类号： H01L31/113

CPC分类号： H01L27/14627 ,  H01L27/14685

摘要： Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed on the semiconductor substrate. The optical path comprises an inner lens formed between an intermetal insulation layer on the photodiode region and a transparent optical region formed on the inner lens. The transparent optical region generally has a different refractive index from the inner lens.

摘要翻译： 公开了互补金属氧化物半导体（CMOS）图像传感器及其形成方法。 CMOS图像传感器包括具有光电二极管区域和晶体管区域的半导体衬底。 在光电二极管区域上的微透镜和形成在半导体衬底上的光电二极管之间形成光路。 光路包括形成在光电二极管区域上的金属间绝缘层和形成在内透镜上的透明光学区域之间的内透镜。 透明光学区域通常具有与内部透镜不同的折射率。

公开(公告)号：US20050269608A1

公开(公告)日：2005-12-08

申请号：US11144622

申请日：2005-06-06

申请人： Duk-min Yi

发明人： Duk-min Yi

IPC分类号： H01L27/146 ,  H01L31/062 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/376

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14641 ,  H04N5/374

摘要： An active pixel sensor (APS) is disclosed which amplifies an electrical charge generated by a light-receiving unit using a charge amplification unit and thereafter processes an output current or voltage corresponding to an amplified version of the electrical charge. The light-receiving unit receives a light signal and generates holes and electrons corresponding to the received light signal, and the charge amplification unit receives and amplifies either the electrons or the holes.

摘要翻译： 公开了一种有源像素传感器（APS），其使用电荷放大单元放大由光接收单元产生的电荷，然后处理与电荷的放大版本对应的输出电流或电压。 光接收单元接收光信号并产生与接收的光信号相对应的空穴和电子，并且电荷放大单元接收和放大电子或空穴。

公开(公告)号：US06635536B2

公开(公告)日：2003-10-21

申请号：US09925914

申请日：2001-08-09

申请人： Hwa-sook Shin ,  Duk-min Yi

发明人： Hwa-sook Shin ,  Duk-min Yi

IPC分类号： H01L218236

CPC分类号： H01L21/76897 ,  H01L21/7684 ,  H01L27/10873

摘要： A method for manufacturing a semiconductor memory device is disclosed. A spacer of a material having a high etching selection ratio with respect to an interdielectric layer is formed on a sidewall of a gate electrode. A refractory metal silicide layer is formed on an upper surface of the gate electrode and on an upper surface of a substrate on which source and drain regions are formed, thereby providing a contact hole self-aligned between the gate electrodes. Also, an ion implantation process is performed on the entire active region after the contact hole is filled with metal such as tungsten, and an impurity region is formed only on a lower portion of the gate electrode.

公开(公告)号：US20080087733A1

公开(公告)日：2008-04-17

申请号：US11896951

申请日：2007-09-07

申请人： Won-je Park ,  Duk-min Yi

发明人： Won-je Park ,  Duk-min Yi

IPC分类号： G06K7/10

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： An image sensor according to an example embodiment may include a plurality of photoelectric transformation active regions, a plurality of read active regions, and/or at least one read gate. The plurality of photoelectric transformation active regions may be formed on a substrate. Each read active region may be formed adjacent to one of the plurality of photoelectric transformation active regions. Each read gate may be formed on one of the read active regions and partially overlap at least one of the adjacent photoelectric transformation active regions. Each read gate may be electrically isolated from the overlapping portion of the photoelectric transformation active region.

摘要翻译： 根据示例实施例的图像传感器可以包括多个光电转换有效区域，多个读有效区域和/或至少一个读门极。 多个光电转换有源区可以形成在基板上。 每个读出的有源区可以形成为与多个光电转换有源区中的一个相邻。 每个读取栅极可以形成在读取的有源区域中的一个上，并且部分地重叠相邻的光电转换有源区域中的至少一个。 每个读取栅极可以与光电转换有源区域的重叠部分电隔离。

公开(公告)号：US07994551B2

公开(公告)日：2011-08-09

申请号：US11896951

申请日：2007-09-07

申请人： Won-je Park ,  Duk-min Yi

发明人： Won-je Park ,  Duk-min Yi

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： An image sensor according to an example embodiment may include a plurality of photoelectric transformation active regions, a plurality of read active regions, and/or at least one read gate. The plurality of photoelectric transformation active regions may be formed on a substrate. Each read active region may be formed adjacent to one of the plurality of photoelectric transformation active regions. Each read gate may be formed on one of the read active regions and partially overlap at least one of the adjacent photoelectric transformation active regions. Each read gate may be electrically isolated from the overlapping portion of the photoelectric transformation active region.

摘要翻译： 根据示例实施例的图像传感器可以包括多个光电转换有效区域，多个读有效区域和/或至少一个读门极。 多个光电转换有源区可以形成在基板上。 每个读出的有源区可以形成为与多个光电转换有源区中的一个相邻。 每个读取栅极可以形成在读取的有源区域中的一个上，并且部分地重叠相邻的光电转换有源区域中的至少一个。 每个读取栅极可以与光电转换有源区域的重叠部分电隔离。

公开(公告)号：US20100120190A1

公开(公告)日：2010-05-13

申请号：US12692133

申请日：2010-01-22

申请人： Duk-Min YI ,  Sung-Keun WON ,  Jun-Yeoul YOU

发明人： Duk-Min YI ,  Sung-Keun WON ,  Jun-Yeoul YOU

IPC分类号： H01L31/18

CPC分类号： H01L27/14687 ,  H01L27/14609 ,  H01L27/14689

摘要： A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is electrically connected to the photo-detective device for outputting charges stored in the photo-detective device. A transistor directly connected to the photo-detective device includes a gate electrode pattern and an ion-implantation interrupting pattern arranged on the gate electrode pattern. Since the ion-implantation interrupting pattern is located on an upper portion of the gate electrode pattern of the transistor in the vicinity of the photo-detective device, a threshold voltage of the gate electrode pattern of the transistor in the vicinity of the photo-detective device is adjusted to a desired value.

摘要翻译： 提供了可靠的图像传感器及其形成方法。 图像传感器包括光检测装置。 至少一个晶体管电连接到光检测器件，用于输出存储在光检测器件中的电荷。 直接连接到光检测器件的晶体管包括布置在栅极电极图案上的栅电极图案和离子注入中断图案。 由于离子注入断线图案位于光检测装置附近的晶体管的栅电极图案的上部，所以在光检测附近的晶体管的栅电极图案的阈值电压 设备被调整到所需的值。