公开(公告)号：US20100102435A1

公开(公告)日：2010-04-29

申请号：US12259357

申请日：2008-10-28

申请人： E. Todd RYAN ,  Holger SCHUEHRER ,  Seung-Hyun RHEE

发明人： E. Todd RYAN ,  Holger SCHUEHRER ,  Seung-Hyun RHEE

IPC分类号： H01L23/52 ,  H01L21/00

CPC分类号： H01L23/562 ,  H01L23/3121 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor package is provided having reduced tensile stress. The semiconductor package includes a package substrate and a semiconductor die. The semiconductor die is coupled electrically and physically to the package substrate and includes a stress relieving layer incorporated therein. The stress relieving layer has a predetermined structure and a predetermined location within the semiconductor die for reducing tensile stress of the semiconductor package during heating and cooling of the semiconductor package.

摘要翻译： 提供具有降低的拉伸应力的半导体封装。 半导体封装包括封装衬底和半导体管芯。 半导体管芯电耦合和物理耦合到封装衬底并且包括并入其中的应力消除层。 应力消除层在半导体管芯内具有预定的结构和预定位置，用于在半导体封装的加热和冷却期间减小半导体封装的拉伸应力。

公开(公告)号：US20100122711A1

公开(公告)日：2010-05-20

申请号：US12271304

申请日：2008-11-14

申请人： E. Todd RYAN

发明人： E. Todd RYAN

IPC分类号： C23G1/00 ,  H01L21/31

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76831

摘要： A wet clean method for semiconductor device fabrication begins by providing a semiconductor device structure having a substrate and features protruding from the substrate. The features are formed from a dielectric material, such as an ultra-low-k material. The method continues by cleaning the semiconductor device structure with an aqueous solution and, following the cleaning step, displacing the aqueous solution with a first solvent. Thereafter, the features are exposed to a second solvent that contains a hydrophobic treatment agent that reacts with sidewalls of the features to form a hydrophobic layer on the sidewalls.

摘要翻译： 用于半导体器件制造的湿式清洁方法开始于提供具有衬底的半导体器件结构和从衬底突出的特征。 特征由介电材料形成，例如超低k材料。 该方法通过用水溶液清洁半导体器件结构继续，并且在清洁步骤之后，用第一溶剂置换水溶液。 此后，将特征暴露于含有与特征侧壁反应以在侧壁上形成疏水层的疏水性处理剂的第二溶剂。